+ All documents
Home > Documents > Supercritical fluids for high power switching - Pure

Supercritical fluids for high power switching - Pure

Date post: 18-Nov-2023
Category:
Upload: khangminh22
View: 1 times
Download: 0 times
Share this document with a friend
159
Supercritical fluids for high power switching Citation for published version (APA): Zhang, J. (2015). Supercritical fluids for high power switching. [Phd Thesis 1 (Research TU/e / Graduation TU/e), Electrical Engineering]. Technische Universiteit Eindhoven. Document status and date: Published: 01/01/2015 Document Version: Publisher’s PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication: • A submitted manuscript is the version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website. • The final author version and the galley proof are versions of the publication after peer review. • The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rights Copyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights. • Users may download and print one copy of any publication from the public portal for the purpose of private study or research. • You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal. If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the “Taverne” license above, please follow below link for the End User Agreement: www.tue.nl/taverne Take down policy If you believe that this document breaches copyright please contact us at: [email protected] providing details and we will investigate your claim. Download date: 18. Oct. 2022
Transcript

Supercritical fluids for high power switching

Citation for published version (APA):Zhang, J. (2015). Supercritical fluids for high power switching. [Phd Thesis 1 (Research TU/e / GraduationTU/e), Electrical Engineering]. Technische Universiteit Eindhoven.

Document status and date:Published: 01/01/2015

Document Version:Publisher’s PDF, also known as Version of Record (includes final page, issue and volume numbers)

Please check the document version of this publication:

• A submitted manuscript is the version of the article upon submission and before peer-review. There can beimportant differences between the submitted version and the official published version of record. Peopleinterested in the research are advised to contact the author for the final version of the publication, or visit theDOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and pagenumbers.Link to publication

General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright ownersand it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.

• Users may download and print one copy of any publication from the public portal for the purpose of private study or research. • You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal.

If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the “Taverne” license above, pleasefollow below link for the End User Agreement:www.tue.nl/taverne

Take down policyIf you believe that this document breaches copyright please contact us at:[email protected] details and we will investigate your claim.

Download date: 18. Oct. 2022

Supercritical fluids for High Power Switching

PROEFSCHRIFT

ter verkrijging van de graad van doctor aan de Technische Universiteit

Eindhoven, op gezag van de rector magnificus, prof.dr.ir. F.P.T. Baaijens,

voor een commissie aangewezen door het College voor Promoties in het

openbaar te verdedigen op dinsdag 19 mei 2015 om 16.00 uur

door

Jin Zhang

geboren te Jiangsu, China

Dit proefschrift is goedgekeurd door de promotoren en de samenstelling van de

promotiecommissie is als volgt:

voorzitter: prof.dr.ir. A.C.P.M. Backx

1e promotor: prof.ir. W.L. Kling

2e promotor: prof.dr. U.M. Ebert

copromotor: dr.ir. E.J.M. van Heesch

leden: Prof.Dr.-Ing. A. Schnettler (RWTH Aachen)

Dr. M. Seeger (ABB Corporate Research)

dr.ing. A.J.M. Pemen

prof.dr.ir. R.P.P. Smeets

dr. R.A.H. Engeln neemt plaats als reservelid

prof.dr. U.M. Ebert neemt tijdens de promotiezitting de taken van wijlen prof.ir. W.L. Kling

over

To my parents and my husband Lei

This research is supported by the Dutch Technology Foundation STW, which is part of the

Netherlands Organization for Scientific Research (NWO), and which is partly funded by

the Ministry of Economic Affairs. Within this context it is also supported by the companies

AnteaGroup, DNV-GL, ABB, and SIEMENS.

Printed by Ipskamp Drukkers.

Cover design by Jin Zhang.

A catalogue record is available from the Eindhoven University of Technology Library.

ISBN: 978-90-386-3840-9

Copyright © 2015 Jin Zhang, Eindhoven, the Netherlands

All rights reserved.

CONTENTS

Contents

Summary i

1 Introduction 11.1 Plasma in supercritical fluids . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.2 Research goal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

1.3 Research approach . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

1.3.1 Experimental work . . . . . . . . . . . . . . . . . . . . . . . . . . 3

1.3.2 Modeling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

1.4 Dissertation outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

2 Supercritical fluids and insulating media 72.1 Short review of conventional insulating media . . . . . . . . . . . . . . . . 7

2.1.1 Breakdown in conventional media . . . . . . . . . . . . . . . . . . 7

2.1.2 Recovery of conventional media . . . . . . . . . . . . . . . . . . . 11

2.2 Supercritical fluids . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

2.2.1 State equation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

2.2.2 SCF properties . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

2.3 Applying supercritical media . . . . . . . . . . . . . . . . . . . . . . . . . 18

2.3.1 Chemical applications . . . . . . . . . . . . . . . . . . . . . . . . 18

2.3.2 Plasma applications in supercritical media . . . . . . . . . . . . . . 19

3 High power switching 233.1 The challenges . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

3.2 Existing solutions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

3.2.1 Vacuum and gaseous state switches for pulsed power applications . 24

CONTENTS

3.2.2 Solid state switches for pulsed power applications . . . . . . . . . . 26

3.2.3 Circuit breakers in power networks . . . . . . . . . . . . . . . . . 27

3.3 Design of supercritical switches . . . . . . . . . . . . . . . . . . . . . . . 29

3.3.1 Simple SC switch (A) . . . . . . . . . . . . . . . . . . . . . . . . 30

3.3.2 Multi-functional SC switch (B) . . . . . . . . . . . . . . . . . . . 34

3.3.3 SC switch (C) with larger gap width . . . . . . . . . . . . . . . . . 38

3.4 Arc interruption testing circuit . . . . . . . . . . . . . . . . . . . . . . . . 41

3.4.1 Circuit principle . . . . . . . . . . . . . . . . . . . . . . . . . . . 41

3.4.2 Real setup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42

4 Experimental investigation of breakdown and recovery in SCFs 454.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45

4.2 Breakdown voltage analysis . . . . . . . . . . . . . . . . . . . . . . . . . 45

4.2.1 Vb under slow pulses (1.66 kV/ms) . . . . . . . . . . . . . . . . . 46

4.2.2 Vb under moderate pulses (2.5 kV/μs) . . . . . . . . . . . . . . . . 48

4.2.3 Vb under fast pulses (2 kV/ns) . . . . . . . . . . . . . . . . . . . . 48

4.3 Dielectric recovery analysis . . . . . . . . . . . . . . . . . . . . . . . . . . 51

4.3.1 Experiment under 1 kHz voltage source . . . . . . . . . . . . . . . 51

4.3.2 Experiment under 5 kHz voltage source . . . . . . . . . . . . . . . 52

4.4 Current interruption analysis . . . . . . . . . . . . . . . . . . . . . . . . . 54

4.4.1 Parameter settings . . . . . . . . . . . . . . . . . . . . . . . . . . 54

4.4.2 Experimental results . . . . . . . . . . . . . . . . . . . . . . . . . 54

4.5 ICCD image of discharge in SC N2 . . . . . . . . . . . . . . . . . . . . . . 61

4.6 Conclusions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64

5 Theoretical modeling of discharge and recovery in SCFs 675.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67

5.2 Simple analytic model . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68

5.2.1 Model description . . . . . . . . . . . . . . . . . . . . . . . . . . 68

5.2.2 Model Formulation . . . . . . . . . . . . . . . . . . . . . . . . . . 69

5.2.3 Results and discussions . . . . . . . . . . . . . . . . . . . . . . . . 71

5.3 Electric field across the gap . . . . . . . . . . . . . . . . . . . . . . . . . . 72

5.4 Extended physical model for discharge in SCFs . . . . . . . . . . . . . . . 74

5.4.1 General model description . . . . . . . . . . . . . . . . . . . . . . 74

5.4.2 Model Formulation . . . . . . . . . . . . . . . . . . . . . . . . . . 77

5.4.3 Streamer-to-spark transition phase . . . . . . . . . . . . . . . . . . 78

5.4.4 Discharge and post-discharge phase . . . . . . . . . . . . . . . . . 82

5.4.5 Numerical conditions . . . . . . . . . . . . . . . . . . . . . . . . . 83

5.4.6 Results and discussions . . . . . . . . . . . . . . . . . . . . . . . . 84

5.5 Conclusions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90

6 Comparison of experiment and model 916.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91

CONTENTS

6.2 Breakdown voltage in SCFs . . . . . . . . . . . . . . . . . . . . . . . . . 91

6.2.1 Principle of Paschen’s law . . . . . . . . . . . . . . . . . . . . . . 91

6.2.2 Violation of simple Paschen’s curve . . . . . . . . . . . . . . . . . 93

6.2.3 Comparison of experiments with theories . . . . . . . . . . . . . . 94

6.3 Dielectric recovery in SCFs . . . . . . . . . . . . . . . . . . . . . . . . . . 97

6.3.1 Validation of simple analytic model - comparison with an air plasma

switch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97

6.3.2 Validation of extended physical model - comparison with SC switch

measurements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98

6.4 Conclusions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101

7 Conclusions and Recommendations 1037.1 Conclusions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103

7.2 Recommendations for future work . . . . . . . . . . . . . . . . . . . . . . 105

Appendix 107A1. State Equation of nitrogen . . . . . . . . . . . . . . . . . . . . . . . . . . . 107

A2. Integrator of the triggering signal generator . . . . . . . . . . . . . . . . . . 110

A3. Calibration of current measured by Rogowski coil . . . . . . . . . . . . . . 111

A4. Cylindrical coordinate in Euler system . . . . . . . . . . . . . . . . . . . . . 112

A5. Simulation of electron-ion recombination in N2 discharge . . . . . . . . . . 113

A6. Ionization and dissociation mechanisms . . . . . . . . . . . . . . . . . . . . 114

Bibliography 119

List of publications 139

Acknowledgement 143

Curriculum Vitae 145

SUMMARY

Supercritical fluids for high power switching

For high power switching media the most important properties are high dielectric strength

and fast dielectric recovery. The performance of the popular insulating media: gases, li-

quids, and solids, is limited by specific disadvantages. The dielectric strength of gases is

relatively low. Although liquids have higher dielectric strength, the performance of liquid

insulators is affected by bubble formation and chemical degradation. Solid insulators can be

damaged by the thermal and electrochemical breakdown. In high voltage power networks,

a discussion about replacing the dominating insulating medium for circuit breakers (CBs)

- Sulphur hexafluoride (SF6), due to its global warming potential and toxic degradation

products, is ongoing. Enormous research has been carried out for exploring new insulating

media, while no promising alternatives have yet been found.

In this thesis work we propose a new medium for high power switching: supercritical

fluid (SCF). SCF refers to a state of fluid where the temperature and pressure are both

above a critical value. In the SC phase fluids have special characteristics, superior to those

in either gas or liquid phase: high density and high heat conductivity, large mass transfer

capability such as low viscosity and high diffusivity. The superiority of SCFs has already

been highlighted in the field of chemistry, due to the unique property around the critical

point: significant change of the density, diffusivity, and solubility with a minor variation

of pressure or temperature. Based on these properties, we foresee significant advantages of

SCFs as switching media in switches for high pulsed power applications.

In this thesis work we investigate the three most important properties of SCFs in high

power switching from both an experimental and a theoretical perspective:

• dielectric strength;

i

ii SUMMARY

• dielectric recovery;

• current interruption capability.

SC nitrogen (N2) is chosen to be the studied medium in our work, because of its relat-

ively low critical pressure (3.396 MPa), critical temperature (126 K), environmental harm-

lessness, and its easy availability.

Via a literature survey, SCF with its basic properties is introduced. State-of-the-art

applications of SCFs in the conventional chemistry field and in the plasma discharge area

are reviewed and discussed. Based on the data obtained from a literature survey and from

the prediction of a simple analytic model, several SCF insulated switches are designed and

manufactured.

Various pulsed voltage sources are designed and built for the experimental analysis

of the SC switches. The dielectric strength and subsequent dielectric recovery of the SC

switches are investigated under these sources. The impact of the parameters such as the

SCF pressure, flow rate, gap width, and voltage rise rate on the breakdown voltage and

recovery is studied under repetitive operation.

Arc quenching capability is an important property for the high-energy switches in the

power system. A simple synthetic circuit is designed and built, to investigate the current

interruption capability of a SC switch. The experimental results reveal that the SC switch,

though with non-moving electrodes and small gap width, can successfully interrupt the

current at a low current amplitude. Higher medium pressure, larger gap width, and more

intense flushing through the gap help the current interruption in the SC switch.

The experimental results show good switching performance of SC N2 switches:

• dielectric strength of 60−180 kV/mm (obtained in low repetition rate situation),

which is higher than most of the dielectric media;

• dielectric recovery completed within 200 μs after short pulse breakdown in a sub-

millimeter gap;

• successful interruption of oscillating current (peak amplitude 20−40 A and damps

to zero at a few milliseconds) within 2 ms after the breakdown in a millimeter gap.

For the in-depth understanding of the breakdown and recovery in SCFs, an extended

physical model has been developed to simulate the complete discharge and recovery process

in a SC N2 switch. The time and spatial evolution of the temperature, pressure, density, and

velocity during the discharge process is investigated. The recovery breakdown voltage of

the SC switch has been estimated from the results of the model.

iii

We compared the experimental results of breakdown and recovery in SC N2 switches

with the simulated values. Good consistency exists between the measured values and the

theoretical calculations. The Paschen’s curve calculated from discharge constants is consist-

ent with the measured dielectric strength in SC N2 at low pd values (product of pressure and

gap width). At high pd values Paschen’s curve gives too high values, whereas the streamer

inception criterion with enhanced ionization gives good prediction of the dielectric strength

in SC N2 for high pd. The modeled recovery breakdown voltage in SC N2 is slightly lower

than in the experimental results. Possible reasons are discussed and improvement of the

present model is proposed.

Conclusions are drawn based on the work carried out in this dissertation, and recom-

mendations for the future work regarding the application of SCFs in high power switching

area are given.

CHAPTER 1

INTRODUCTION

1.1 Plasma in supercritical fluids

Supercritical fluid (SCF) refers to a state of fluid where the temperature and pressure are

above the critical point. In this SC area, liquid and gas states are united and undistin-

guishable. SCFs have been studied since long in chemistry fields, as an alternative to the

traditional solvents [1–3]. Besides the conventional chemical application, SCFs recently

attracted attention in the area of plasma discharges, due to the combined superior transport

properties of SCFs with the high reactivity of plasmas [4].

Plasma in various SC media has been observed and studied, for different purposes. Fig-

ure 1.1 illustrates the images of plasma in several SCFs [5–7]. Plasma in SCFs is an inter-

esting subject which covers applications for a wide area: SC plasma chemistry, SC plasma

power switches, and dense planet atmosphere, etc.. Figure 1.2 gives a diagram of the ap-

plication fields of plasmas in SCFs.

Plasma chemistry studies in SCFs mainly focus on the near-critical region, where the

properties of the fluid change significantly with a minor variation of pressure or temper-

ature. Reported work concerning plasma chemistry in SCFs comprises conversion of or-

ganic compounds [8] and plasma microreactor for synthesis of nanomaterials and diamon-

doids [9–11]. The research on plasma discharges in SCFs also involves lightning phenom-

ena on extra-terrestrial planets such as Venus and Saturn, where the surface atmosphere is in

SC condition due to the temperature and pressure [12]. The potential of SCFs in high power

switching applications, though less explored, is attractive to us, because of the expected

unique breakdown and recovery characteristics of SCFs.

1

2 1. INTRODUCTION

(a) (b)

(c) (d) (c)

Figure 1.1 – Plasmas generated in different SCFs. (a) lightning in the Saturn interior atmosphere

[5]; (b) in SC argon [6]; (c) in SC carbon dioxide; (d) in SC nitrogen [7].

1.2 Research goal

The goal of this work is to explore the potential of SCFs for applications in high power

switching. The research area is indicated by the highlighted parts in figure 1.2. SCFs

combine the advantages of liquids and gases, therefore, SCFs have high dielectric strength

and fast dielectric recovery. Density of a SCF is liquid like and the viscosity is gas like.

Heating a liquid above boiling conditions causes vapor bubbles, while heating a SCF does

not cause vapor bubbles. This is the important property for applications in high power

equipment. Other important advantages of SCFs for high power applications as a switch

include high heat capacity, high diffusivity, and high heat conductivity.

The main potential applications of SCFs in high power switching area are insulating

media in high repetition rate pulsed power switches and replacement for sulfur hexafluoride

(SF6) in high voltage circuit breakers (HVCBs) in power networks. SCFs operated pulsed

power switches are expected to allow higher power and higher repetition rates than those

achievable with gaseous spark gaps, based on the advantages of SCFs mentioned above. For

pulsed power applications such as pollutants treatment with plasma discharges, high peak

voltage and high operation frequency help improve the efficiency of pollutant treatment

[13]. Therefore utilization of SCFs as switching media for the pulsed power switches in

plasma purification systems can achieve more compact switches. In power networks there

is the desire of replacing SF6 in HVCBs, because SF6 is an extreme greenhouse gas with

global warming potential 23,900 times that of carbon dioxide (CO2) [14]. Besides, the

1.3. RESEARCH APPROACH 3

Plasmas in supercritical fluids

SC plasma power switch

Power networks

SF6 free switch gears

Pulsed power systems

Pulsed power processing [7]

Ignition & stabilization in

combustion [136]

Supercritical plasma chemistry

Synthesis of nano-particles

[9-11]

Conversion of chemical

compounds

Conversion of organic

compounds [8]

Plasma purification

Dense planetary atmosphere [12]

Figure 1.2 – Application area of plasmas in supercritical fluids. The research area in this thesis

work is high-lighted.

decomposition products of SF6 are extremely toxic. SCF could be an ideal alternative to

SF6, due to its high dielectric strength, expected fast dielectric recovery, and environmental

harmlessness.

In this thesis work we investigate the dielectric strength and recovery capability of SCF

switches from both an experimental and a theoretical perspective. SC nitrogen (N2) is

chosen to be the studied medium, because of its relatively low critical pressure (3.396 MPa),

low critical temperature (126 K), environmental harmlessness, and its easy availability.

1.3 Research approach

1.3.1 Experimental work

The experimental work on an insulating medium includes investigation of the dielectric be-

havior such as dielectric strength and dielectric recovery, inspection of the parameters of the

medium such as the temperature, density, and electron/ion mobility during/after discharges,

and inspection of the parameters of the switch materials such as materiel electrode erosion.

The dielectric strength of a medium is tested by applying high-voltage waveforms across

two electrodes separated by the medium. Various waveforms can be applied: positive or

negative polarity; direct current (DC), alternating current (AC), or pulsed voltages. The

mechanisms and conditions that determine the dielectric strength have been investigated and

reported extensively in literature. For example, geometry of the electrodes [15], electrode

4 1. INTRODUCTION

surface roughness [16], rate-of-rise of the voltages, voltage polarity [17], gas pressure [18],

gas temperature, and gas flushing velocity, etc.. The main experimental approach for the

dielectric recovery investigation in power switches is a two-pulse technique [19, 20]: the

first pulse causes the breakdown of the switch and the second pulse tests the dielectric

recovery voltage.

The inspection of the plasma parameters is also important for the study of the high power

plasma discharges. Laser shadowgraph [21], Schlieren imaging [22], and spectroscopic

investigation [23] are the common experimental approaches.

Recent data about the breakdown voltage in SCFs, e.g. SC CO2, SC argon (Ar), SC

helium (He) and SC N2, have shown the very high dielectric strength of SCFs [17, 24–27].

But the performance of SCFs concerning dielectric recovery has rarely been studied.

In this thesis work we have chosen the following approaches for the experimental study

of the SCFs switching:

• investigating the dielectric strength of SC N2 switches by applying different pulsed

sources at low repetition rates;

• testing the dielectric recovery of SC N2 switch under repetitive operation mode with

pulsed voltage sources up to 5 kHz;

• estimating the current interruption capability of the SC switch with an arc interruption

testing circuit;

• investigating the discharge radius in SC N2 using an intensified CCD camera, provid-

ing important data for the theoretical modeling.

1.3.2 Modeling

In plasma discharge research, modeling is an important approach to gain insight in the

processes and interactions. A number of modeling tools have been developed to explain

the phenomena of plasma in various insulating media, especially in gases. According to the

time evolution of a discharge, the models focus on separate discharge stages:

� avalanche-to-streamer stage: from the avalanche initiation by a single electron to the

formation and propagation of streamers [28, 29];

� sparking (arcing) stage: from the streamer bridges the gap onward, until the formation

of a complete conducting channel in the gap [30–37];

� discharge and post-discharge stage: after the spark (arc) channel formation, until the

energy decay and dielectric recovery of the switch gap [38–40].

In the early stage of a discharge, the generation of avalanches and streamers concerns com-

plicated plasma physics and gas dynamics. Literature on modeling methods for this stage

includes: Monte-Carlo-collision [41, 42], Particle-in-cell [43], Boltzmann equation solv-

ing [44, 45], etc.. The time scale of the streamer stage is normally nanosecond to several

1.4. DISSERTATION OUTLINE 5

microseconds, depending on the studied media and applied electric stress. The modeling

work found in literature concerning this time range is mainly devoted to the breakdown

process in atmospheric pressure gases and studies of plasma processing.

The arcing stage and discharge and post-discharge stage have a much longer time scale

than the streamer stage. Simulation of arcing and recovery in CBs is a typical example. The

time evolution of the properties of the gases in CBs is inspected till the turbulent mixing

phase, which is normally in millisecond to second range. Methods for modeling of dis-

charges in CBs include: Computational fluid dynamics [46] and Turbulent modeling [47].

Since the nanosecond time scale of the streamer stage is rather short compared to the whole

simulation time, the complicated streamer phase is mostly neglected in the modeling of

discharge in CBs.

Among the well-studied numerical models, few of them have combined the modeling

of these stages and simulated the complete discharge process inside the media. There is no

published report on modeling of the discharge processes in SCFs. A model covering the

complete discharge process in SCFs would be very interesting in order to learn the impact

of the early stage on the late recovery phase in an electric switch.

In this thesis work we have developed two models to simulate the complete discharge

process in SCFs:

• a simple analytic model which employs the mechanisms of adiabatic expansion and

heat transfer in succession, aiming on roughly predicting the recovery time in a SCF,

hence providing important design data for the SC switches;

• an extended physical model, taking the simulation results in streamers and experi-

mental results in SC N2 as input parameters, which simulates the complete discharge

process in SCFs.

1.4 Dissertation outline

Chapter 2 briefly reviews the starting point of the thesis work: conventional insulating me-

dia and SCFs with their present applications. The breakdown and recovery mechanisms of

gases, liquids, and solids in electric switches are generally discussed. Via a literature sur-

vey, SCF with its basic properties is introduced. State-of-the-art applications of SCFs in the

conventional chemistry field and in the plasma discharge area are reviewed and discussed.

Chapter 3 discusses the main challenges of high power switching. The existing solutions

for high power switches in pulsed power switching and power networks are reviewed. As

an alternative, the design and experimental layout of SCF insulated switches is introduced.

Chapter 4 studies the switching characteristics of SCFs experimentally. The dielectric

strength and the subsequent dielectric recovery in SC N2 switches are investigated. The

capability of current interruption of the SC switch is investigated under an arc interruption

testing circuit. Additionally the spark channel radius in a SC N2 switch is estimated by an

6 1. INTRODUCTION

intensified CCD camera, providing important input parameters for the theoretical analysis

in chapter 5.

Chapter 5 develops two physical models for the theoretical analysis of the discharge and

recovery process in a SCF switch. A simple analytic model roughly predicts the recovery

time in SC N2, and provides design data for the SC switches applied in this work. The elec-

tric field across the gap is estimated from the measured arc current. An extended physical

model simulates the complete discharge and recovery process in SC N2. The time and spa-

tial evolution of temperature, pressure, density, and velocity of the SCF during the discharge

process is investigated.

Chapter 6 compares the theoretical estimation with the experimental results. The break-

down voltage in SC N2 is observed to deviate from the prediction by the simple Paschen’s

curve in high pd region, while matching well with the calculations based on the streamer

inception criterion with enhanced ionization. The validation of the two physical models in-

troduced in chapter 5 is tested by comparing the simulation results with the measurements

in real plasma switches.

Chapter 7 summarizes the main conclusions and gives recommendation for future work.

CHAPTER 2

SUPERCRITICAL FLUIDS AND

INSULATING MEDIA

2.1 Short review of conventional insulating media

The breakdown and recovery processes differ in each insulating medium. High dielectric

strength and fast subsequent recovery are considered as the most important criteria for an

insulating medium in high power switches. The performance of the popular insulating me-

dia: gases, liquids, and solids, is limited by specific disadvantages. The dielectric strength

of gases is relatively low. Although liquids have higher dielectric strength, the performance

of liquid insulators is affected by bubble formation and chemical degradation. Solid insu-

lators can be damaged by the thermal and electrochemical breakdown. In this section the

breakdown and dielectric recovery in gaseous, liquid, and solid state insulators is briefly

surveyed and discussed.

2.1.1 Breakdown in conventional media

The dielectric strength of an insulating medium depends on its specific characteristics, and

is influenced by the external environment. Figure 2.1 summarizes the dielectric strength of

the selected gaseous, liquid, and solid state insulators under two types of voltage sources:

lightning pulse and 50 Hz AC source. In the following the breakdown mechanisms in these

conventional insulating media as well as the factors affecting the dielectric strength are

reviewed.

7

8 2. SUPERCRITICAL FLUIDS AND INSULATING MEDIA

Mineral oil

Air

Lightning pulse

SF6 PTFE (thin film)

Liquid N2

AC breakdown

Breakdown voltage

[kV/mm]

Liquid He

Figure 2.1 – Summary of the dielectric strength for selected insulators: air (0.5−4 bar) [48],

mineral oil [49, 50], Liquid N2 [51, 52], SF6 (1−3 bar) [53], liquid He [54], and Solid (PTFE

thin film) [55,56] under AC source and lightning pulses. The solid line and dashed line represent

the envelope of breakdown voltage under 50 Hz AC source and lightning pulse, respectively.

Gas insulators

Leaving lightning aside, gas discharges have been studied since the 18th century, with early

reports dating back to 1705. Only till about two centuries later, the explanations were

founded that we know today, aided by the discoveries of the breakdown law in 1889 by

Paschen, the electron concept in 1897 by Thomson, and the ionization and discharge laws

in 1900 by Townsend. The streamer breakdown mechanism was discovered and explained

in 1939 and in 1940 by Loeb, Raether and Meek [57], [58]. The dielectric strength of gases

is dependent on the density/pressure, and in practical applications is influenced by various

factors such as the electrode shape, the electrode surface condition, the rising slope of the

applied voltage, and the polarity of the impulses, etc.. In the scenario of gas mixtures, the

dielectric strength depends also on the fractions of gas components [59].

Electrical breakdown of a gas is the result of self-sustained avalanche processes that

depends on the relative activity of electron generation and loss mechanisms [60]. The

breakdown mechanism can be classified into two types: Townsend breakdown and streamer

breakdown. The criterion for distinguishing Townsend and streamer mechanism is the elec-

tron number in the first avalanche: if the number of electrons is larger than a critical value

Ncr, then the breakdown transits from Townsend to streamer mechanism. For both break-

down mechanisms, the famous similarity law: Paschen’s law [61] states that the breakdown

voltage is a function of the product of pressure and gap width (the pd value). Under high

pressure and small gap width, the breakdown voltage of gases tends to be lower than pre-

diction by the Paschen’s law [53]. Similar effects are reported from breakdown studies in

2.1. SHORT REVIEW OF CONVENTIONAL INSULATING MEDIA 9

liquids at normal pressure. Extra factors need to be considered when calculating the dielec-

tric strength of gases under elevated pressure and micro gaps. We will discuss this issue in

detail in chapter 6.

Air, N2, CO2 [62, 63], and SF6 are applied for high power switches. SF6 is widely

employed in the power networks as an excellent insulating and arc quenching medium for

HVCBs and gas insulated substations (GIS) [64,65]. However, due to the greenhouse effect

of SF6, many countries have noticed the huge impact of SF6 on the environment. Efforts

to reduce the emission of SF6 are ongoing, among which the replacement of SF6 in CBs

is a major task. Mixing of SF6 with other gases such as N2 or Ar reduces the amount

of SF6 needed. Research on the mixture of SF6 with inert gases includes SF6+air [66],

SF6+CO2 [67], SF6+Ne (neon) [68], SF6+N2 [69], SF6+He [70], SF6+Ar, and SF6+H2

(hydrogen) [71]. At present a SF6-N2 mixture is often applied. Such mixtures are non-

flammable and those containing 50−60 % of SF6 have dielectric strength up to 85−90 %

that of pure SF6 [59].

Investigations have also been proceeded to study other insulating media for full replace-

ment of SF6 [62,72–77]. No promising alternative has yet been found within the same pres-

sure and temperature range. However, the main relative superiority of SF6 over other gas

species like N2 and CO2 in dielectric strength diminishes when pressure is above 9 bar [78].

Liquid insulators

Liquids such as liquid He [79,80], liquid N2 [51,52], and mineral oil [49,50] are applicable

for high power switches. The breakdown phenomena in liquid dielectrics have been extens-

ively studied in the past a few decades [81, 82]. Although being complimented for higher

dielectric strength compared to gaseous insulators, liquid dielectrics have their own disad-

vantages, which make their applicability less common in switches (mineral oil has been

applied but been replaced by gaseous insulators completely). The main disadvantages of

liquids in switches are bubble formation during the breakdown process [83–85], chemical

degradation, poor self-healing properties, and field emission from small protrusions on the

electrode surfaces [85–87].

Under short impulses with pulse duration up to several hundred nanoseconds, the form-

ation and propagation of the ionization waves is the main mechanism of breakdown in li-

quids [88]. For longer impulses, the formation of gas bubbles due to the liquid evaporation

becomes the dominant process [88]. Bubbles, i.e. gas cavities with lower dielectric strength

than liquids, are generated a few microseconds after the voltage is applied [89]. During the

discharge process, streamers first develop in these bubbles rather than in the liquid phase,

which process is known as partial discharge [90]. After the bubbles deform due to ioniza-

tion and plasma phenomena therein, the breakdown transits from lower density region into

liquid phase, and finally leads to the breakdown of the liquid medium.

The dielectric strength of liquid insulators is dependent on the properties of the li-

quid (pressure, temperature, and impurities), and on the external environment (applied field

strength, pulse duration, and electrode surface material, roughness, and area). In general,

the longer the pulse duration, the more the breakdown field of liquids decreases [91]. Under

10 2. SUPERCRITICAL FLUIDS AND INSULATING MEDIA

short impulses (< 0.1 μs), the dielectric strength has a weak dependence on the temperature

and pressure, but a strong dependence on the pulse duration [88]. The temperature, pres-

sure, and pulse duration play more significant role under pulses longer than 1 μs: higher

temperature [92], lower pressure [93], and longer pulse duration [91] deteriorate the dielec-

tric strength of the liquids. The bubble formation process happens at lower temperature in

a liquid with impurities than that in a pure liquid [88]. With more rough electrode surface,

larger effective surface area, lower work function and higher hardness of the electrode, the

dielectric strength of the liquid decreases [87, 94].

Solid insulators

Solid insulators are used almost in all electrical equipment, forming an integral part of elec-

trical devices especially when the operating voltage is high [95]. The breakdown field of

a solid insulator is in order of 10−100 kV/mm, depending on the thickness of the used

dielectrics [55, 96]. Regarding the number and duration of repetitive voltage applications,

the breakdown mechanisms in solid dielectrics are classified in figure 2.2 [95]. For short

pulses, time of the order of 10−8 seconds, breakdown in the solids can be caused by the

migration of the free electrons through the lattice of the dielectric, named ’intrinsic break-

down’. Under longer duration of the electric field, when the continuously generated heat

due to conduction currents and dielectric losses is greater than the heat dissipated, the solid

undergoes so called ’thermal breakdown’ [95].

Bre

akdo

wn

stre

ngth

Intrinsic breakdown

s time

thermal

streamer

electrochemical

Figure 2.2 – Breakdown mechanism of solids with time of repetition of applied voltage.

The dielectric strength of solid insulators might be affected by the material quality (e.g.

cavities in the solid) [97] and by the external factors (e.g. temperature [98] and humid-

ity [99]). Under situation of gas cavities in the solid, the electric field in the cavities will

be εr times higher than that in the solids, which makes the gas cavities break down at lower

voltage. Under repetitively applied voltages, the breakdown in the cavities develops step by

step and finally leads to the complete breakdown of the solid. It is known as breakdown

due to treeing [100]. Accompanied by the cavities breakdown, local thermal instability and

chemical degradation of the material may occur, resulting in the slow erosion of the material

and cause a breakdown below desired value. This breakdown process is known as ’electro-

2.1. SHORT REVIEW OF CONVENTIONAL INSULATING MEDIA 11

chemical breakdown’ [95]. Thermal breakdown becomes increasingly more important at a

temperature above 400 K [98]. The environment humidity enters the dielectric by diffusion

processes, resulting in a remarkable change of both permittivity and dielectric losses, which

reduces the dielectric strength of the solid materials [99].

2.1.2 Recovery of conventional media

The dielectric recovery of an insulating medium can be defined as the re-establishment of the

dielectric strength after breakdown. Insulating media have their specific dielectric strength

in undisturbed situations, as mentioned in section 2.1.1. Under applied electric field, a

medium goes from insulating to breakdown, accompanied by conducting channels building

up in the inter-electrode gap. During the discharge process the temperature of the medium

in the channel increases dramatically due to the energy input. After the arc extinction, the

total energy of the medium changes due to the gas dynamic expansion and heat transfer

from the hot channel to the environmental medium. The thermodynamic properties of the

medium in the discharge channel recover and finally the dielectric strength of the medium

can recover.

The experimental results of the recovery time in selected insulating materials are sum-

marized in table 2.1 [20,101–105]. Typical gas insulators like air, N2, and Ar have recovery

times typically in the order of ten to hundred milliseconds [106]. Various factors e.g. gas

pressure, gap width, gas flushing velocity, and input energy can influence the recovery time

of the gases. Chemical decomposition products and metallic vapor from the electrodes also

play a crucial role in recovery of the media.

Flushing of liquids through the gap can help remove the vapor bubble, hence reduce

the recovery time of liquids [107]. However, too much flushing in a liquid reduces the

dielectric strength, due to the transition from laminar to turbulent flow [91]. From data

collected in various experiments [91, 101, 107], it is found that even though with optimized

flow, the maximum available repetition rate of a water discharge switch can only reach

around 2 kHz [101].

The repetition rate of the solid-state switches can be in the MHz range with average

power in the order of kilo Watts [108–110]. In solid switches such as IGBTs with voltage

rate above 4.5 kV, the practical switching frequency is generally lower than 1 kHz, due to

switching loss limitations [111,112]. Intensive cooling by bulky forced air or liquid cooling

systems is required for these solid-state switches during operation [113].

12 2. SUPERCRITICAL FLUIDS AND INSULATING MEDIA

Tabl

e2.

1–

Over

vie

wo

fth

ere

cover

yra

tes

inw

ater

,hy

dro

gen

,S

F6,

air,

Ar,

Pro

py

len

eca

rbo

nat

e,an

dN

2.

Co

nd

itio

nIn

sula

tor

Wat

er[1

01

]A

r-H

2m

ixtu

re[1

02

]S

F6

[20

]S

yn

thet

icai

r[1

03

]

(95

%−

5%

)

Gap

wid

th[m

m]

0.0

6−

0.1

30.1

3≤

80

65−

70

Pre

ssu

re[M

Pa]

0.1

0.1

0.7

92.9

60.5

0.1

40.2

6

Flo

wra

te[c

m3/s

]0

0.4

0.6

0.3

−−

Cu

rren

t[k

A]

−−

32

54

02

21

1

Rec

over

yti

me

[ms]

−−

−1

58

0.6

0.6

0.3

>1

>2.5

>8

>1

0

Max

.re

pet

itio

nra

te[H

z]1

k1.4

k<

1k

67

12

51.7

k1

0k

3.3

k<

1k

<4

00

<1

25

<1

00

Co

nd

itio

nIn

sula

tor

Ar

[10

2]

Pro

py

len

eca

rbo

nat

eN

2[1

04

]

(C4H

6O

3)

[10

5]

Gap

wid

th[m

m]

0.1

30.2

0.8

1.2

2.7

3.7

Pre

ssu

re[M

Pa]

0.7

91.4

82.9

60.1

0.1

0.4

0.1

0.4

0.1

0.4

0.1

Flo

wra

te[c

m3/s

]0.3

0.3

−C

urr

ent

[kA

]−

−−

Rec

over

yti

me

[ms]

97

2−

16

07

02

00

10

09

00

70

01

00

0

Max

.re

pet

itio

nra

te[H

z]1

10

14

35

00

<1

06.3

14.3

51

01.1

1.4

1

2.2. SUPERCRITICAL FLUIDS 13

2.2 Supercritical fluids

A fluid can be found in three states: gas, liquid or supercritical fluid (SCF), depending on the

combination of the fluid parameters. Above the critical temperature Tc and critical pressure

pc, specific for each fluid, a fluid becomes supercritical, as can be seen in figure 2.3. Many

pressurized gases are actually in SCF sates, for example N2 in a gas cylinder above 3.4 MPa

is acting as a SCF.

Pres

sure

Temperature

Triple point

Solid

Liquid

Critical point

Tc

Pc

Supercritical fluid

Gas

Fluid Critical Criticalpressure temperature

[MPa] [K]

H2O 21.8 647

CO2 7.38 303

He 2.27 5.20

H2 1.28 33.3

Ar 4.90 151

N2 3.40 126

Air 3.77 132.6

Figure 2.3 – Idealized phase diagram of a single substance and the critical pressure (pc) and

critical temperature (Tc) of the selected fluids.

The critical point is the point corresponding to the critical temperature Tc and critical

pressure pc, above which the distinction between the liquid and gas (or vapor) phases dimin-

ishes. The values of these parameters slightly vary across reports due to the experimental

difficulties in the critical region as well as the modeling problems [114]. In this work we

use the values of N2 reported in [114]:

Tc = 126±0.01 K;

pc = 3.3958±0.0017 MPa;

ρc = 313.3±0.1 kgm−3 (= 11.1839±0.014 mol ·m−3) .(2.1)

In the SC phase a fluid has special characteristics that are superior to those either in gas or

liquid phase, as will be discussed in detail in the following.

2.2.1 State equation

The general state equation of a fluid can be expressed using the Helmholtz energy α with

independent variables of density ρ and temperature T by equation [114]:

α (ρ,T) = α0(ρ,T)+α r (ρ,T), (2.2)

14 2. SUPERCRITICAL FLUIDS AND INSULATING MEDIA

where α0(ρ,T) stands for the ideal gas contribution to Helmholtz energy; α r (ρ,T) is the re-

sidual Helmholtz energy corresponding to the influence of inter-molecular forces. Pressure

of the fluid p can be calculated as the ideal gas contribution plus a correction term given by

the derivative of the residual Helmholtz energy:

p = ρRT

[1+δ

(∂α r

∂δ

)]τ, (2.3)

in which R is the molar constant, δ = ρ/ρc the reduced density, and τ = Tc/T the reduced

temperature. The detailed equations for α0(ρ,T) and α r (ρ,T) for N2 (the studied medium

in this work), and the partial derivatives in equation (2.3) are given in appendix A1.

Pc: 3.3958

Pre

ssur

e [M

Pa]

Figure 2.4 – Phase diagram of N2 in the range of temperature 86−306 K and pressure up to

20 MPa, calculated by state equation (2.3).

Figure 2.4 illustrates the phase diagram of N2 in form of pressure versus density up to

20 MPa, within the temperature range of 86−306 K. Below the critical temperature Tc,

N2 has either gas status (when above critical pressure) or liquid status (when below critical

pressure). N2 changes from other phases to the SC phase when the temperature and pressure

satisfy T > 126 K, p > 3.4 MPa.

The parameter range of SC N2 in the case of electrical discharge applications is in the

region: 300 K < T < 104 K, 5 MPa < p < 50 MPa, because we work at room temperature

but during discharges temperature and pressure will increase considerably. A reference

equation was developed, valid for SC N2 between 250 K and 350 K and pressure up to

30 MPa [114]:

p = ρRT(1+10

∑k=1

ikNkδ ikτ jk ), (2.4)

with the parameters given in table 2.2.

2.2. SUPERCRITICAL FLUIDS 15

Table 2.2 – Parameters used in the state equation of N2, equation (2.4).

k Nk ik jk

1 −0.409226 1.0 −1.0

2 0.583733818 1.0 −0.875

3 −0.132040812535×101 1.0 1.625

4 0.854602646673×10−1 2.0 0.125

5 0.207794266769 2.0 3.5

6 0.112593667×10−1 3.0 0.0

7 −0.604379290×10−1 3.0 2.875

8 0.567224683×10−2 4.0 −0.125

9 −0.496167879×10−2 6.0 −1.0

10 0.572786636×10−2 6.0 −0.875

2.2.2 SCF properties

Properties attractive in traditional applications

The unique properties of SCFs open the way for applications such as efficient reaction

media in chemical applications. In the near-critical region of a fluid, properties change

significantly with a minor variation of pressure or temperature [1]. The most well-known

property of SCFs in this term is their controllable solvent strength.

Solubility represents the solvent strength of a substance in a solvent. The solubility

parameter δ can have a direct impact on the reaction rate, yield, design, and economy

of the process [115]. Depending on the processes of interest, either high solubility (e.g.

in supercritical extraction process) or extremely low solubility (e.g. in supercritical anti-

solvent precipitation processes for particles manufacture) is required [115].

Around the critical point, the solubility parameter of a fluid can be finely tuned over

a wide range, with a small variation in either isothermal pressure or isobaric temperature

[116]. This unique feature of the solubility in SCFs makes them important reaction media

in chemical reactions that need precise process control or reversibility. Extreme examples

of this feature are processes in which SC CO2 extracts a bond component into the CO2.

After releasing the pressure, the dissolved material can easily be separated (used e.g. in

decaffeination, dry cleaning, and herbal extraction).

Properties attractive in high power switching

The performance of a high power switch strongly depends on the characteristics of the

insulating medium. SCFs have the following favorable characteristics that are relevant to

high power switching:

– similar to gases: low viscosity, high diffusivity, and self-healing;

16 2. SUPERCRITICAL FLUIDS AND INSULATING MEDIA

– similar to liquids: high dielectric strength, high heat capacity, and high thermal con-

ductivity.

A comparison of the order of magnitude of the physical properties for common insulating

media in the three phases is given in table 2.3. Figure 2.5 plots the profiles of the viscos-

ity, thermal conductivity, diffusivity, and specific heat of N2 in the range of temperature

of 110−290 K and pressure up to 40 MPa (covering gas, liquid and SC phases). In the

following these properties are briefly introduced and the advantages of SCFs are discussed.

Table 2.3 – Comparison of the order of magnitude of the properties for common insulating

media in gas (at standard temperature and pressure) and liquid phases and SC N2. The value of

diffusivity is the order of magnitude figure for N2 in range of T = 70−500 K, p = 0.1−80 MPa.

Density Viscosity Diffusivity Heat Thermalcapacity conductivity

[kg/ m3] [μPa · s] [m2/s] [106 J/m3/deg] [10−3 J/m/s/deg]

Gas at STP 1 10 10−300 1 20

SC N2 100 50 2−60 100 100

Liquid 500 100 1−2 500 200

Viscosity of a fluid measures the tendency to dissipate energy when disturbed from equi-

librium by the imposition of a flow field [1]. The viscosity of a fluid η can be expressed

with equation [118]:

η = η0(T)+η r (τ,δ ), (2.5)

in which η is the dynamic viscosity, η0 the dilute viscosity corresponding to low pressure

gas (typically one atmospheric pressure), ηr the residual fluid viscosity, δ and τ the reduced

density and reduced temperature. The detailed calculation of η0 and η r of N2 can be found

in [118]. Viscosity for a SCF is almost the same as in a gas and it is 10 times less than a

liquid [119]. The viscosity of liquids has weak dependence on the temperature, while for

SCFs temperature can affect the viscosity in a considerable way [1].

Thermal conductivity of a fluid is defined to be the quantity of heat transmitted through

a unit thickness in a direction normal to a surface of unit area, due to a unit temperature

gradient under steady state conditions. Similar to the calculation of viscosity, thermal con-

ductivity λ of a fluid can be calculated as the function of temperature and density with

equation:

λ = λ 0(T)+λ r (τ,δ )+λ c(τ,δ ), (2.6)

in which λ 0 is the dilute gas thermal conductivity, λ r the residual fluid thermal conductivity,

λ c the thermal conductivity critical enhancement. Detailed calculation of λ 0, λ r and λ c for

N2 can be found in [118]. The thermal conductivity of a fluid is significantly enhanced in

2.2. SUPERCRITICAL FLUIDS 17

0 5 10 15 20 25 30 35 400

0.2

0.4

0.6

0.8

1

1.2

1.4 x 10−4

Visc

osity

[Pa*

s]100 K

110 K

130 K

170 K210 K

250 K

290 K

(a)

0 5 10 15 20 25 30 35 400

0.02

0.04

0.06

0.08

0.1

0.12

0.14

0.16

Ther

mal

con

duct

ivity

[W/m

/K]

100 K

110 K

130 K

170 K 210 K250 K

290 K

(b)

0 5 10 15 20 25 30 35 40100

101

102

103

Diff

usiv

ity [m

2 /s]

110 K

170 K130 K 100 K

210 K250 K290 K

(c)

0 5 10 15 20 25 30 35 40101

102

103

Pressure [MPa]

Hea

t cap

acity

cp [J

/mol

/K]

130 K

290 K250 K

210 K170 K

110 K

(d)

100 K

Figure 2.5 – Comparison of the (a) viscosity, (b) thermal conductivity, (c) diffusivity, and (d)

specific heat of N2 in gaseous (blue dots), liquid (green dots) and SC states (red dots), reproduced

from the NIST Standard Reference Database [117].

18 2. SUPERCRITICAL FLUIDS AND INSULATING MEDIA

the ’near-critical region’ (T ∼ Tc, p ∼ pc) as well as in the ’extended critical region’ (up to

T/Tc = 2) [1].

Diffusivity stands for the capability of the random movement of a fluid from an area of

higher concentration to an area of lower concentration. In a gas undergoing breakdown, the

higher the diffusivity (υ), the faster the heat is transferred from the high temperature gas in

the spark channel. Diffusivity of a SCF, though lower than a gas, can be considerably higher

than a liquid [120]. The diffusivity of N2 used in this work is reproduced from [117].

Heat capacity is the measurable physical quantity of heat energy required to change the

temperature of the fluid by a given amount. The higher the heat capacity (cp for isobaric

value and cv for isochoric value), the smaller the temperature changes under given deposited

energy. The detailed equation for the heat capacity of SC N2 is given in appendix A1.

From the survey of the properties we can see that the properties of SCFs combine the

advantages of gases and liquids. The combined properties lead to the favorable capability of

high dielectric strength and fast dielectric recovery. In the following the traditional chemical

applications of SCFs as well as the research proceeded in the plasma discharge area are

discussed.

2.3 Applying supercritical media

2.3.1 Chemical applications

SCFs have drawn much attention in the chemistry field as alternatives to the traditional re-

action media. The clustering phenomenon or local density enhancement is regarded as a

fundamental feature in SCFs and their mixtures. In the clusters the member molecules are

bounded to each other with relatively weak inter-molecular forces. The life time of an av-

erage cluster (∼ picoseconds) is much shorter than that in solids and liquids [121]. Cluster

formation generally influences the solution structure and affects transport properties such

as mass transfer coefficients. This characteristic makes SCFs applicable in sensitively con-

trolled reaction conditions (e.g. rates and pathways), which is impossible with traditional

solvents. In industrial applications the SCFs are employed as separation, material produc-

tion and reaction media [1].

The industrial applications for SCFs as solvents include SCF extraction [122], SCF

drying [123], polymer processing using SCFs [124], oxidative destruction of toxic waste

[125], hydrogenation of organic compounds, [126], chemical synthesis for nano-particles

[127], and other applications. SC CO2 is the most utilized SCF in such applications, due

to the advantage of convenient critical temperature, non-inflammability and non-explosive

properties.

2.3. APPLYING SUPERCRITICAL MEDIA 19

2.3.2 Plasma applications in supercritical media

Besides the traditional chemical applications, SCFs, typically SC CO2, also attracted atten-

tion in the electrical discharge area, due to the unique characteristics of plasmas generated

in SCFs. Research on plasma discharges in SCFs focuses on experimental investigations,

while the theoretical analysis is less explored. The studies on plasma discharges in SCFs

can be classified into two main groups, based on the temperature of plasma: non-thermal

plasmas and thermal plasmas.

Non-thermal plasmas in SCFs

Non-thermal plasmas generated in SCFs, which combine the superior transport properties

of SCFs with the high reactivity of plasmas, have been extensively studied. The mostly

studied SCFs for non-thermal plasma are SC CO2 [3, 128, 129], SC Xe (Xenon) [9], SC

water [8], and SC Ar [130]. The reported applications comprise the conversion of organic

compounds [8] and plasma micro-reactors for synthesis of nano-materials and diamondoids

[9–11]. In this section we give a short overview of the state-of-the-art applications of non-

thermal plasmas in SCFs, as well as the research carried out on non-thermal SCF plasmas.

Low temperature plasma in sub-critical water generates active species (.H, .OH, ion,

and free electron) which have high reactivity, thus can be used for the conversion of organic

compounds such as phenol and aniline. [8] proceeded the experiments of the degradation of

phenol in a sub-critical water solution (in non-catalytic condition) with plasma discharges.

During the experiment 60−150 kV peak voltages were applied to a gap of 0.1 mm width,

in a reaction cell (900 mL total volume) filled with solution. The feed solution was prepared

by dissolving of phenol or aniline using the distilled water. Experimental results show that

the degradation of phenol increases with the number of plasma discharges, and reaches a

conversion percentage of 17 % after 4000 shots.

In contrast to atmospheric-pressure CO2 environments, in which no carbon materials

could be fabricated, it is possible to fabricate various carbon materials, such as amorphous

carbon, graphite and nanostructured carbon materials, using SC CO2 as a processing me-

dium on a raw starting material [10]. Experimental results reveal that in the vicinity of the

critical point, fabricated carbon nanostructured materials have the largest quantity. Varying

voltage frequency has impact on the conversion percentage of nanostructured materials.

Besides surveying the industrial applications, numerous research work on non-thermal

plasma discharges in SCFs has been carried out. The studied aspects of SCFs in non-thermal

plasma include corona onset, and streamer formation and propagation.

The corona inception phenomenon in SCFs and its dependence on voltage polarity and

electrode configuration are important for the design of efficient plasma reactors. Measure-

ments of corona onset voltages in CO2 in various phases, under negative and positive polarit-

ies were performed in [3,17]. The results with point/plane electrode under negative polarity

reveal that the corona onset voltage in CO2 is independent on the medium pressure in the

gas and SC phase, while in liquid phase it increases with higher liquid density [131, 132].

20 2. SUPERCRITICAL FLUIDS AND INSULATING MEDIA

For negative polarity, very little corona or other partial discharge activity was observed for

voltages below the breakdown voltage.

Streamers are essential components in pulsed corona discharge applications. The ini-

tiation and branching of streamers in the reaction medium are considered to have impact

on the process efficiency. Via methods of fractal analysis and Schlieren experiments, the

streamer initiation, streamer branching, and streamer length in SC CO2 were investig-

ated [133–135]. The streamer initiation voltage under negative pulses is found to be lower

than that under positive pulses. Under both positive and negative voltage polarities the

streamer initiation voltage increases with the density in gas phase, while in liquid and in

SC phases it is independent on the density and keeps almost constant [134]. The complex-

ity of the streamer branching is observed to be higher in SC phase than that in liquid and

in gas phases. The streamer length in SC CO2 is reported to be dependent on the applied

voltage, the fluid density, and the polarity of applied voltage, varying from a few to tens of

micrometer (at applied peak voltage 20 kV and gap width 5 mm): the larger the density, the

shorter the streamer length [133, 134].

Thermal plasmas (breakdown in SCFs)

The complete breakdown in SCFs leads to a thermal plasma. Thermal plasma in SCFs is

less explored compared to non-thermal plasma. A reported application is the supercritical

mixing and combustion in rocket propulsion [136]. Studies on the breakdown phenomena

in SCFs have been done mostly in SC CO2 [129, 131, 137, 138] and a few in SC He [139],

SC H2O [140], SC air [141], and SC Xe [142]. In the following the breakdown delay

time, breakdown voltage, and the influencing factors on the breakdown voltage in SCFs are

reviewed.

Breakdown delay time was investigated in SC CO2 [131]. Experiments were performed

under two different CO2 temperatures: 305 K and 373 K. The experimental results in SC

CO2 show that up to a density of 90 kg/m3 (pressure 4−5 MPa), the breakdown delay

time increases with the density, while beyond this point the delay time suddenly drops to a

value which is much lower than that at 90 kg/m3 [131]. This phenomenon is observed in

near-critical region at CO2 temperature of 305 K, and in SC region at temperature 373 K.

Although the reason for the sudden drop of the breakdown delay time is not clear yet,

random molecular clustering around the critical point might be responsible for the speeding

up of breakdown process.

Breakdown voltage in CO2 up to the SC state at around room temperature was exper-

imentally investigated [137, 143, 144]. The measured breakdown voltage in CO2 reveals

that the dielectric strength of CO2 increases with the density [143]. Experimental results

in [137, 143] show that under both DC and pulsed voltage, in low gas density, the meas-

ured breakdown voltage agrees with the prediction by Paschen’s law, while in higher dens-

ity region, the measured value deviates from Paschen’s curve and tends to saturate in SC

phase [137]. The breakdown voltages in the SC phase are more scattered compared to the

gas phase, and seem not to be dependent on the density anymore. The possible reasons for

the lower than calculated breakdown voltage are suggested to be the influences of the mo-

2.3. APPLYING SUPERCRITICAL MEDIA 21

lecular clusters and space charges [137, 145]. The reason for the saturation of breakdown

voltage in SC phase was assumed to be the field emission on the tip of protrusions on the

electrode surface.

Experimental results in CO2 including the SC phase also show that the breakdown

voltage experiences a local minimum near the critical point of a fluid under DC voltages

[128]. The local minimum dielectric strength near the critical point is presumed to be caused

by the locally enhanced ionization phenomena caused by the molecular clusters with lower

ionization potential or accelerated electrons in in-homogeneous (low density) region [141].

An interesting observation must be pointed out that under pulsed voltage sources, the local

minimum on breakdown voltage around the critical point is not obvious in CO2 [143]. How-

ever, the experiments of micro-discharge (with gap width of 25 μm) in SC air [141] observe

a local minimum on breakdown voltage around the critical point, under nanosecond-pulses.

A possible explanation for the conflicting observations in [143] and [141] might be: the

locally enhanced ionization near the critical point is not sufficient to reduce the breakdown

voltage in a gap larger than millimeter range. But in a micro-gap such as 25 μm, the loc-

ally enhanced ionization did play significant role, which causes the local minimum of the

breakdown voltage also under pulsed voltage.

CHAPTER 3

HIGH POWER SWITCHING

3.1 The challenges

High power switching is essential in high power applications to control and limit the power

flow and to protect the power network against abnormal situation. The development of

modern industry demands larger and faster high power switches. The technical require-

ments such as current rating, voltage rating, and maximum repetition rate (for pulsed power

switch) are continuously increasing, although the emphasized parameters may vary with

specific applications. For example the development of high voltage and extra high voltage

transmission systems demands switches e.g. circuit breaker (CB) with larger power capab-

ility. In pulsed power applications such as corona gas purification pulsed power switches

with higher repetition rates are desired.

In the pulsed power technology field the pulsed switch is an essential element in the

chain that generates and transmits high voltage pulses. The load can be a plasma reactor, a

switch requiring triggering signals, or equipment under high voltage/current test, etc.. The

technical requirements for these switches are: high insulation strength during off-mode, low

resistance during on-mode, large current rating, high voltage rating, fast switching time (low

jitter), allowing high repetition rate switching, fast recovery after switching, low inductance,

self-healing medium, long life time, and accepting large overloads.

The vital characteristics of CBs include: short switching time, high current rating, fast

arc quenching, rapid dielectric strength regaining, long service time, and safe operation. In

modern power networks, the development of direct current (DC) transmission systems and

the increasing distributed energy generation bring more challenges to the power switches in

the systems [113,146]. CBs in DC systems are more difficult to operate compared to the AC

CBs. The reasons are: 1) there is no natural current zero-crossing point in the DC system,

and 2) DC CBs need to dissipate large amount of energy stored in the inductance of the

system [147]. The increased short-circuit power resulting from increased distributed energy

23

24 3. HIGH POWER SWITCHING

generation requires faster reaction time, higher current rating, and more frequent current

interruption of CBs than before, especially in MV and HV networks [113,146]. In addition

to the technical requirements, from environmental conservation point of view, CBs should

minimize the use of environmentally hazardous switching media, typically, SF6 in HV and

EHV CBs.

3.2 Existing solutions

In pulsed power systems, both gaseous (and vacuum) state switches and solid state switches

are widely employed and have their own advantages and drawbacks. A comparison of the

switching voltage, switching current, repetition rate, firing jitter, and turn-on/-off time of

selected gaseous and solid state switches in pulsed power applications can be found in table

3.1.

Gas and vacuum pulsed switches have relatively simple design, higher power capability

and longer service time compared to the solid state pulsed switches. The disadvantages of

gas insulated pulsed switches are the large jitter, strong dependence on the switch design

and insulating material, and massiveness. Solid state pulsed switches have advantages of

stable operation, compact design, low maintenance cost, low jitter, and high repetition rate.

However, the maximum capable switching current and voltage of solid state pulsed switches

are lower than those of gaseous and vacuum pulsed switches. In practical applications the

favorable property of high repetition rate of solid state pulsed switches has to be weighted

against the high dissipation and either low switching speed or low current capability [148].

Since the first prototype described by Thomas Edison in 1879, high energy switches

such as CBs in power networks have been developed for over one hundred years. The

rated switching capabilities increased dramatically with generations of CBs. Classic CBs

are mechanical switches insulated with gases or liquids. Solid-state CBs nowadays are

also more and more popular in low and medium voltage level power networks, due to their

advantage of shorter switching time (microsecond range) than that of the mechanical CBs

(millisecond range) [146]. However, the material cost and the cost caused by losses and

maintenance of solid state CBs are higher than those of the mechanical CBs. Furthermore,

extra costs for cooling and system controls is another disadvantages of solid CBs compared

to the mechanical CBs [146].

In section 3.2.1-3.2.2 we give a brief overview of the state-of-the-art gaseous and solid

state pulsed power switches. The development of CBs in power networks is surveyed in

section 3.2.3.

3.2.1 Vacuum and gaseous state switches for pulsed power applications

The exciting period for development of vacuum and gaseous state switches for high power

applications was from beginning of the last century till the 1980s. Various types of gas

switches appeared and all have their own characteristics. The commonly employed vacuum

and gaseous state switches include:

3.2. EXISTING SOLUTIONS 25Ta

ble

3.1

–C

om

par

iso

no

fth

ep

rop

erti

eso

fse

lect

edp

uls

edp

ow

ersw

itch

es.

Switc

hty

peVo

ltage

Cur

rent

Rep

etiti

onJi

tter

Turn

-on

time

Ref

eren

ces

rate

Co

ldca

tho

de

<1

kV

--

20−

25

s-

[14

9]

swit

ch

Vac

uu

mtu

bes

5−

20

kV

2−

10

kA

10

Hz

50−

10

0n

s-

[15

0]

Thy

ratr

on

≤1

00

kV

≤1

0k

A1

kH

z1−

5n

s[1

50

,15

1]

Pse

ud

o3−

32

kV

2−

30

kA

1k

Hz

5n

s-

[15

2,1

53

]

spar

kgap

Gas

fill

ed1

00

kV

10

0k

A∼

kH

z>

5n

s-

[15

4]

spar

kgap

Las

ertr

igg

ered

30

kV

∼k

A∼

kH

z<

1n

s-

[15

5]

spar

kgap

-

Ign

itro

n3

0k

V7

00

kA

--

-[1

56

]

Co

ron

a1

00

kV

−-

2−

40

ns

-[1

53

,15

7]

stab

iliz

edsw

itch

IGB

T≤

6.5

kV

∼1

00

A2

0k

Hz

-[1

08

]

SiC

n-I

GB

T1

5k

V2

0A

--

20

0n

s[1

09

]

SO

Sd

iod

e1−

2.2

kV

10

0−

36

0A

10

0H

z-

t off=

5−

10

ns

[15

8,1

59

]

JRd

iod

e8

0k

V1

kH

z-

∼n

s;[1

60

,16

1]

t off=

0.5−

2n

s

SiC

Sch

ott

ky

dio

de

1.2

kV

20

A1

kH

z-

∼n

s;[1

61

]

MO

SF

ET

1.2

kV

1A

1M

Hz

-1.2

5−

40

ns

[11

0,1

62

,16

3]

SI

Thy

rist

or

6.5

kV

16

5A

1k

Hz

-3

5n

s[1

64

,16

5]

ET

OT

hy

rist

or

10

kV

<1

kA

5k

Hz

-∼

20

0n

s[1

66

]

SiC

GT

O1

2k

V1

00

A-

-7

0n

s[1

67

]

(op

tica

lly

trig

ger

ed)

26 3. HIGH POWER SWITCHING

Cold cathode devices - a category of vacuum insulated switches with very simple

design, normally for triggering other larger devices. The typical operation voltage is several

hundred Volt [149]. The disadvantage of such a switch is the large firing jitter: typically

20 μs in day light and a 250 μs in darkness. Triggered vacuum gaps are applied up to

50 kV, have very short and constant trigger delay but repetition frequency of approximately

1 Hz.

Thyratron - a type of gas filled tube used as a high power electrical switch and con-

trolled rectifier. The H2 thyratron is a typical example. A H2 thyratron can switch up to

100 kV voltage, a peak current of few kilo amperes, with firing jitter of 1−5 ns [150, 151].

The repetition rate of the H2 thyratron is up to 1 kHz [150].

Pseudo spark gap [152] - a new thyratron-type of switch capable of high speed switch-

ing. Commercial pseudo sparks have switching parameters of: voltage 3−32 kV, peak

current 2−30 kA, and pulse repetition rate 1 kHz [168]. The jitter of a pseudo spark gap is

normally a few nanosecond [150].

Gas filled spark gap - a type of switch with simple design, usually applied in high

voltage pulse generators. The insulating media can be high or atmospheric pressure N2,

air, SF6, H2, or even liquids. The operation parameters are up to 100 kV voltage, 100 kA

current [154], and a few kHz repetition rate. Laser triggered [155] and field-distortion

triggered [169] spark gaps have jitters in the sub-nanosecond range.

Ignitron - a mercury vapor switch in which an arc is induced between an anode and a

mercury pool cathode. The structure of the switching tube and the mechanism of ignition

play dominant roles in the performance of an ignitron. Typical ignitrons can switch up to

100 kA current, 10 kV voltage, with low repetition rates [150]. With optimal design of

tube size, an ignitron can switch peak currents of 700 kA and charge transfer ratings of

250 C [156].

Corona stabilized switch - a type of switch filled with electronegative gases e.g. air or

SF6. Under a strongly non-uniform electrical field supplied by DC or slowly rising voltage,

space charges develop around the highly stressed electrode, redistributing the electric field

such that the non-uniform electrode is shielded from the rest of the gap. This phenomenon

can be used to reduce the recovery time of the withstand voltage and thereby can have

an increased repetition rate. A corona stabilized switch has a breakdown voltage in the

range of 15−100 kV, and the jitter can be less than 5 ns if the gas pressure is carefully

chosen [153, 157].

3.2.2 Solid state switches for pulsed power applications

Solid state switches appeared since the middle of last century, initially were just designed

for low voltage and communication systems. From the 1990s due to the availability of new

materials the voltage and power capability of solid state switches have been dramatically

improved. The list of recent solid state switches includes:

3.2. EXISTING SOLUTIONS 27

Diode - a crystalline piece of semiconductor material with a P-N junction connected to

two electrical terminals. Diodes are used as important nanosecond opening switch for high

power switching [170]. Two modes of diodes are popular: junction recovery (JR) diode and

silicon opening switch mode (SOS) diode [158]. JR mode diodes are preferable as bases

for generators with a pulse rise-time of 0.5−3 ns and a peak power of ≤ 50−80 MVA.

An example of application of JR model diodes can be found in [160], which introduces

a powerful drift step recovery diode (DSRD)-based generator with switching properties of

80 kV, 0.8 kA, 1.0 kHz, and 0.8 ns turn-off time. The turn-on time for an ultra-fast recovery

diode is typically in nanosecond range [161]. SOS diodes are preferable at a pulse rise-time

higher than 5 ns for any power and at any pulse rise-time if the peak power is higher than

100 MVA.

Thyristor - a type of solid-state semiconductor device with multiple layers of alternat-

ing N and P-type material. Static-induction (SI) thyristors, emitter turn-off (ETO) thyris-

tors, and silicon carbide gate turn-off thyristors (SiC GTOs) are widely applied. Maximum

voltage rating of SI thyristors is 6.5 kV with current in the range of a few kA [164]. The

ETO thyristors have a switching voltage up to 10 kV [166]. SiC GTOs have highest block-

ing voltage of 12 kV and are believed to have a potential of above 15 kV [167]. The turn-on

time for thyristors varies between 35 ns (SI thysitor [165]) and 200 ns (ETO thyristor).

IGBT - abbreviation for insulated gate bipolar transistor. The highest commercially

available Silicon (Si) IGBT has a switching voltage of 6.5 kV, a current of several kA

[108]. Other state-of-the-art IGBT technology using silicon carbide (SiC) can switch 15 kV,

at 20 A [109], and as a turn-on time of 200 ns. The available repetition rate for IGBTs

nowadays is about 20 kHz [171].

MOSFET - refers to metal-oxide-semiconductor field-effect transistor. A modern SiC

MOSFET has a typical switching voltage of 1.2 kV, switching frequency as high as 1 MHz,

and power capacity of 1.2 kVA [110]. The turn-on time of a MOSFET is in the range of a

few nanosecond [163] to tens of nanosecond [162, 172].

3.2.3 Circuit breakers in power networks

The first electricity transmission systems were DC systems. However, in the early days,

DC power could not be transformed to higher voltages for efficient transport over long

distances. Since the three-phase AC was introduced around 1910, it has been the dominant

option for the transmission and distribution of electric power. Circuit breakers are critical

to the safe operation of power networks. They are responsible for the regular switching

of circuits in operation, and for the disconnection of components in case of overload or

short-circuit [173]. CBs can be classified according to:

− the voltage level: low voltage (LV), medium voltage (MV), and high or extra high

voltage (HV or EHV);

− the insulating media: water, oil, air, SF6, vacuum, and solid state, etc.;

28 3. HIGH POWER SWITCHING

− the switching current: alternating current (AC) and direct current (DC).

We focus on the survey of (E)HV CBs. In (E)HV networks CBs are designed for either

indoor or outdoor applications. The outdoor (E)HV CBs are more often seen in our daily

life. There are two types of outdoor CBs: dead tanks (enclosure grounded) and live tanks

(enclosure at working voltage). They both have their own advantages and drawbacks. Dead

tanks allow easy installation of current transformers and they are completely assembled with

factory made adjustment. But dead tanks are more expensive and require larger volume of

insulating media than live tanks. Live tanks have advantages of lower cost, more compact

structure, and less insulating media. However, live tanks are at high voltage level, so they

need careful isolation from ground [174].

The insulating media for CBs have made great developments in the past century; mean-

while, the capacity rating of the CBs increased dramatically. Figure 3.1 gives an overview

of the development of the insulating media in CBs [173]. Water and bulk oil insulated CBs

are the earliest products applied on low current and voltage levels. Due to the problems of

massiveness and explosion risks of oil, bulk oil CBs are no longer manufactured anymore

since the last quarter of the 20th century.

Figure 3.1 – Development of the insulating media for circuit breakers in power system networks,

reproduced from [173].

The minimum oil CBs are simple in design and have low need of mechanical power.

They are based on the principle of oil CBs, but reduce the oil volume to about 10 % of that

in bulk oil CBs. The minimum oil CBs were applied until the 1980s and had a voltage rating

of 3−420 kV and an interruption capacity of 250−25000 MVA [175]. In the meantime

the compressed air CB, as a competitor, became also popular as an clean device, easy in

maintenance [176]. The switching parameters for a single unit of an air blast CBs (CBs

employ a high pressure air blast as an arc quenching medium) reached a voltage of 400 kV

and a breaking current of 87 kA [177]. However, both of these two types of CBs had

their drawbacks: minimum oil CBs required periodic maintenance and replacement; air

CBs required powerful compressors and made noise during operating. Demanding of more

frequent maintenance is another disadvantage of air CBs.

In the 1970s, SF6 CBs, having high dielectric strength and excellent arc quenching

capability, were introduced in HV systems. Meanwhile, in MV systems, vacuum CBs were

3.3. DESIGN OF SUPERCRITICAL SWITCHES 29

widely applied for the level up to 72 kV [178]. Nowadays SF6 CBs are widely applied

in high/extra and ultra-high voltage systems up to 1200 kV with power up to 800 MVA

[179,180]. Commercial vacuum CBs are developed up to 145 kV, 40 kA (per single-break)

[181].

In an AC system basically CBs interrupt the current at current zero-crossing. Enormous

switching technologies and CB designs have been developed over the past hundred years.

The majority of the CBs mentioned above were designed for AC systems. In the recent

decades, the development of high voltage converters made the transmission of DC power at

high voltages and over long distances possible, thus reviving the interest in HVDC transmis-

sion systems [182]. With the conventional two-terminal HVDC transmission system, more

and more converter stations are required with the increasing number of HVDC lines. Multi-

terminal (MT) HVDC transmission systems can effectively reduce the number of converter

stations needed, thus save cost, increase reliability and reduce conversion losses. DC CBs

were not required in HVDC transmission systems with two-terminal scheme [147, 183].

However, unlike the two-terminal scheme, the reliability, controllability, and efficiency of

the MT HVDC transmission systems strongly depend on HVDC CBs [147].

As mentioned before, the current commutation and energy absorption are the two critical

requirements for DC CBs. The detailed implementation of these requirements differs in

LV/MV and HV systems. But the principles are the same: a mechanical interrupter working

together with the auxiliary circuits [147]. So far the HVDC CBs have only been realized

in very limited numbers, with limited ratings. The first HVDC CB was an air-blast breaker

reported in 1959, which was capable of interrupting 100 kV voltage and 250 A current

[183].Today the maximum ratings of HVDC CBs are 250 kV, 8 kA, with interruption time

of 28−30 ms (SF6 insulation) [184] or 500 kV, 4 kA, with interruption time of ≤ 20 ms

(air blast) [185].

Recently, hybrid breakers composed of a mechanical CBs in the nominal path and a

solid-state switch in the auxiliary circuit, are presented as a new concept for fast switching

(< 3−5 ms) in (E)HV systems, independent of AC or DC systems [147].

3.3 Design of supercritical switches

The existing solutions for high power switching all have their specific strong and weak

points. Based on the combination of excellent properties of SCFs (high dielectric strength,

high heat transfer capability, and possible low cost), we should expect very good perform-

ance of SCFs for high power switches.

We have designed and manufactured three SCF insulated switches and tested their

dielectric strength and recovery capability in different experimental setups. The key points

when designing a SCF insulated switch include:

• Sufficiently high mechanical strength

• Compact design with minimum stray inductance

• Precise gap distance adjustment and measurement

30 3. HIGH POWER SWITCHING

• Necessary inspection and diagnostic components for SCF parameters

• Optimized gas flow design for flushing and pressurizing the switch.

Table 3.2 – Comparison of the design parameters of the three SC switches denoted with (A), (B),

and (C) in our work.

SC switch A B C

Gap width 0−0.5 mm 0−1.2 mm 0.05−5.0 mm

Max. SCF pressure 200 bar 200 bar 200 bar

Integrated capacitor & TLT

Structure compactness Simple (transmission line transformer) Simple

Optical window;

Diagnostic components No Embedded I & V sensor No

Flow meter;

SCF parameter Pressure gauge Pressure gauges; Flow meter;

inspection Heat ex-changer; Pressure gauges;

Air driven booster

The three SC switches: simple SC switch (A), multi-functional SC switch (B), and

high voltage SC switch (C), were designed for different purposes, hence the focused design

parameters have distinct differences. Table 3.2 compares the design parameters of the three

SC switches. Later we will describe the switch designs and the experimental setups in detail.

3.3.1 Simple SC switch (A)

In order to get a first impression about the dielectric strength of SCFs, a simple SC switch

(A) was designed and manufactured. The cross section of this switch is shown in figure 3.2.

The switch consists of three major parts: two metal electrode bodies with plane electrode

heads (1), two Ertalyte (an un-reinforced semi-crystalline thermoplastic polyester based on

polyethylene teraphalate (PET-P)) insulator bodies (2), and a metal housing (3). The sealing

of SCF inside the switching chamber is realized by O-rings embedded in the slots (4) on

the electrode surface as well as on the inside of the metal housing. Via engagement of the

threads on the insulator bodies and on the inside of the metal housing, the inter-electrode

gap distance can be adjusted in a range of 0−0.5 mm, with accuracy of ±0.01 mm. A fluid

inlet and an outlet hole with threads are employed on the metal housing, axially aligned

with the switching gap. This switch has a very simple design and compact structure, but

sufficient mechanical strength for SCF with pressure up to 200 bar. There is no optical

access in this simple SC switch. Diagnostic components for SCF temperature and flushing

rate through the switch are not available.

Figure 3.3 gives a sketch of the SCF flow through SC switch (A). The SC N2 comes from

a N2 cylinder (with purity of 99.9%), with maximum pressure of 200 bar. The pressure of

3.3. DESIGN OF SUPERCRITICAL SWITCHES 31

(1) (2) (3) (4) (5) a b c d

Figure 3.2 – Cross section of simple SC switch (A). (1)-Electrode body; (2)-Ertalyte insulator;

(3)-Metal housing; (4)-Slots for high pressure sealing O-rings; (5)-Inlet/outlet hole for insulating

SCF. In the enlarged view of the electrodes part: a. Ertalyte insulator; b. Gap width; c. Electrode

body; d. O-rings for high pressure sealing.

Figure 3.3 – Schematic of the SCF loop for the simple SC switch (A).

SC N2 supplied to the SCF loop is controlled via a pressure regulator. The accuracy of the

pressure regulator is ±1 bar. Pressure drop of the SCF in the loop due to friction (major

loss) in stainless steel tubes is neglected, so the pressure of the SC N2 in the switch gap was

read from the value on the outlet gauge of the pressure regulator. We measure the distance

between the ends of the cathode and anode when they touch each other (gap width equals

zero) by a vernier caliper and take it as a zero value. When the electrodes are separated, the

distance between the two ends after pressurization of the gap is taken as the status value.

The difference between the status value and the zero value is the gap width of the switch, at

certain gap pressure. Due to the deformation of the insulator material under high pressures,

the inter-electrode gap distance of the switch filled with SCFs is larger than that before the

pressurization. So the gap width of the switch has to be measured each time again after the

pressurization.

The experiments with SC switch (A) were carried out in the situation of no-flow and

forced SC N2 flushing respectively. The flushing of SC N2 through the switching gap was

32 3. HIGH POWER SWITCHING

simply realized by opening the valve denoted as ’2’ on the downstream side of the switch. In

the forced flushing scenario, since no flow meter is applied in the SCF flow circuit, the flow

rate and flow velocity is estimated from the open section of the needle value 2. Two types of

impulse voltage: a slow charging circuit with voltage increasing slope of 1.66 kV/ms and

a fast charging circuit with slope of 2 kV/ns are applied to SC switch (A). In the following

these two circuits are introduced.

Slow charging circuit (1.66 kV/ms)

The circuit diagram of a slow charging source with charging rate of 1.66 kV/ms is given in

figure 3.4.

Figure 3.4 – Schematic of the slow charging circuit (1.66 kV/ms) for SC switch (A).

In this circuit an adjustable (up to 230 V) sinusoidal voltage (50 Hz) is transformed to

high voltage by two transformers with ratios of 3 : 1 and 1 : 360 in succession. Capacitor C1

is charged to high-voltage DC via the leakage inductance of the transformers, the resistor

R1, and a rectifying diode. In a second charging process, capacitor C2 is charged from

capacitor C1 via a resistor R2 and a diode, to a peak value of 40 kV. Since C1 � C2, C1

acts like a constant voltage source. Once the SC switch breaks down, energy dissipates into

the resistive load R3. A resistor R2 prevents the discharge of C1 into R3. After breaking

down, C2 discharges almost completely and the next charging process can start again. The

repetition rate of this sequence is slow and is determined by the R2 ·C2 time (33.2 ms), gap

setting and adjustable initial sine wave amplitude.

Fast charging circuit (2 kV/ns)

A faster charging circuit with charging rate of 2 kV/ns is illustrated in figure 3.5. This cir-

cuit supplies an impulse voltage with 50 kV peak value. In this circuit the 230 V sinusoidal

voltage source with two transformers is used again (see the slow charging circuit in figure

3.4). The capacitor C1 is charged via the transformers, a resistor R1 and a diode. Reson-

ant charging of C2 from capacitor C1 occurs (differently from the slow charging circuit)

via a diode, an inductor L1 and an air spark gap X1. Via the breakdown of a second air

plasma switch X2, voltage pulses with rising rate of 2 kV/ns are generated and amplified

by a 4-stage transmission line transformer (TLT). Under these pulses, breakdown voltages

3.3. DESIGN OF SUPERCRITICAL SWITCHES 33

of SC switch (A) are measured by a voltage probe on the high voltage side, with experi-

mental situations of either a 200 Ω resistive load connected behind the SC switch or a direct

short-circuit to ground behind the switch.

Figure 3.5 – Schematic of fast charging circuit (2 kV/ns) for SC switch (A) with experimental

situation of 200 Ω load connected.

-5 0 5 10 15 20x 10-7

-2

0

2

4

6

8

10 x 104

Time [s]

Brea

kdow

n vo

ltage

[V]

directly connect to groundconnected with 200 load

-5 0 5 10 15x 10-8

0

2

4

6

8x 104

Time [s]

Brea

kdow

n vo

ltage

[V]

Figure 3.6 – Typical voltage waveforms measured in simple SC switch (A) under fast charging

circuit (2 kV/ns) as shown in figure 3.5. The voltage waveforms till 150 ns are enlarged in the

subfigure.

The purpose of these two grounding situations is to investigate the influence of load on

the measured breakdown voltage of SC switches. Figure 3.6 explicitly shows that the meas-

ured voltage has different values under situations of the load connected and short circuited.

This is because the voltage measured before the switch is composed of two components

in series: 1) the voltage across the switch and 2) the voltage across the load. In the scen-

ario of a 200 Ω load connected behind the switch, there is some temporary voltage building

up across the load during the fast charging process of the switch capacitance. Hence, the

voltage drop across the switch at breakdown is lower than the charging voltage measured

before the switch. In the scenario of a direct short-circuit to ground, most of the charging

34 3. HIGH POWER SWITCHING

voltage appears across the switch, so the measured voltage before the switch in this case

more closely represents the breakdown voltage of the switch.

3.3.2 Multi-functional SC switch (B)

In order to gain an in-depth knowledge of the breakdown and subsequent dielectric recov-

ery, installation of inspection and control components needs to be considered when design-

ing a SC switch and its setup. The SCF parameters like pressure, temperature, and flow

rate should be controllable and measurable; the switch gap distance should be precisely

adjustable; the stray inductance in the experimental circuit should be minimized; optical

observation of the spark generated in SCFs should be possible in order to provide valuable

information about the discharge generated in the SC medium. Based on these considera-

tions we have designed and manufactured a SC switch with multiple functions, named as

SC switch (B).

1 2 3 4 f a b c d e

5 6

Figure 3.7 – Versatile SC switch (B) and the schematic of its setup. a. cable for voltage supply

to high voltage capacitor Ch; b. trigger pin; c. integrated high voltage capacitor Ch (total capacit-

ance in the range of 1−12 nF); d. Rogowski coil; e. copper plate for voltage sensor; f. stainless

steel plate for connection to load (TLT & resistive load); 1. Adjusting knob for trigger electrode;

2. Adjusting knob for main electrode; 3. Flexible aluminum disk for gap width adjustment; 4.

optical sight plug; 5. SCF inlet tube; 6. SCF outlet tube.

Figure 3.7 gives a 3D plot of the SC switch (B). The aluminum switch housing provides

sufficient mechanical strength for the SCF up to pressure of 200 bar; the integration of

the high voltage capacitors in the switch minimizes the stray inductance in the circuit; the

3.3. DESIGN OF SUPERCRITICAL SWITCHES 35

Figure 3.8 – Schematic cross section of the electrode part in SC switch (B). The switch is cyl-

indrical symmetric. SC N2 flows through the path indicated by dash line arrows. 1. Stainless

steel electrode body; 2. Tungsten copper (WCu 75/25) anode; 3. Quartz filled epoxy insulator;

4. WCu 75/25 trigger electrode; 5. WCu 75/25 cathode; 6. Typical region of spark channel when

switch breaks down; 7. O-ring for SCFs sealing; 8. Insulator body; 9. Metal screw to fix the

cathode to the electrode body.

movable anode facilities variable gap widths in a range of 0−1.2 mm, with accuracy of

±0.01 mm; replaceable heavy duty electrode heads (WCu 75/25) provide option for the

electrode erosion investigation; quartz windows allow optical observation of the SCF dis-

charge; integrated current and voltage sensors provide high band-width current and voltage

measurements; the flange on the right, attached to the 4-stage TLT, is the output connec-

tion. To the load it supplies a 4-fold voltage amplification [186], i.e. 120 kV peak value,

facilitating further study of higher voltage SC switch breakdown in the future.

The detailed electrode part of SC switch (B) is sketched in figure 3.8. The anode (2)

has an annular configuration with inner diameter of 10 mm and outer diameter of 24 mm.

N2 flows through the gap between the trigger pin (4) and anode (2), and then flushes the

gap between the anode and the cathode (5). The cathode is a planar electrode with the same

corresponding area as the anode. After the breakdown of the main gap the spark channel

develops randomly in the gap, e.g. (6) between the two electrodes.

Figure 3.9a gives the drawing of the SCF loop for SC switch (B). SC N2 (with purity of

99.9 %) is supplied from the N2 cylinder. A pressure regulator controls the pressure of SC

N2 going to the SCF loop. An air driven gas booster is used to facilitate the N2 flow in the

loop in the scenario of forced flushing; a balance vessel is used to smooth out the pressure

fluctuation caused by pulsed operation of the gas booster; a pressure relief valve with set

pressure of 200 bar is mounted to prevent the over-pressure in the loop; a water cooled tube-

in-tube heat ex-changer keeps the SCF temperature constant at room temperature (300 K);

36 3. HIGH POWER SWITCHING

(a) Schematic of SCF loop for SC switch (B).

(b) Picture of the SCF loop for SC switch (B).

Figure 3.9 – Design and real setup for the SCF loop of multiple functional SC switch (B).

a flow meter as well as two pressure gauges monitor the SCF volume velocity and pressure

flowing through the SC switch.

Two repetitive voltage sources with repetition rate of 1−1000 Hz and 1−5000 Hz re-

spectively are employed to test the dielectric strength and dielectric recovery of SC switch

(B).

Moderate repetition rate circuit up to 1 kHz and charging rate 2.5 kV/μs

A charging circuit with voltage rise slope of 2.5 kV/μs and repetition rate in the range of

1−1000 Hz is shown in figure 3.10.

3.3. DESIGN OF SUPERCRITICAL SWITCHES 37

Figure 3.10 – Schematic of the 1 kHz charging circuit with voltage rise rate of 2.5 kV/μs and

repetition rate of 1−1000 Hz. Ch - high voltage capacitor (in real setup it is integrated in the SC

switch, denoted as ’c’ in figure 3.7); L1 - air core inductance; TLT - transmission line transformer;

RL - resistive load matching the impedance of TLT.

−10 −5 0 5 10 15 20 25 30−15

−10

−5

0

5

10

15

20

25

30

35

Time [μs]

Volta

ge [k

V]

0 100 200 3000

200

400

600

800

1000

1200

Time [ns]

Cur

rent

[A]

Figure 3.11 – Typical voltage (measured with a North Star PV 5.0 HV probe) and current (meas-

ured by a single turn Rogowski coil) waveforms of SC switch (B) under the 1 kHz charging

circuit shown in figure 3.10. The pressure of SC N2 is 80 bar, the gap width 0.3 mm, and the

temperature 300 K.

In the circuit a repetitive voltage source with 1 kV peak value and 1−1000 Hz variable

repetition rate is connected to a 1 : 30 ratio pulse transformer. The resonant circuit (Ch rep-

resents the capacitor integrated in the SC switch (B)) applies voltages with increasing slope

of 2.5 kV/μs and peak value of 30 kV to the anode of SC switch (B). A LCR triggering cir-

cuit [186] connects the anode with the trigger pin of the switch. During the charging process

of Ch (in real setup it is integrated in the SC switch, denoted as ’c’ in figure 3.7) the voltage

on the trigger pin increases simultaneously with, and in a certain proportion (depending on

the value of L, R, and C) to the voltage on the anode. After the charging is finished, the

voltage on the trigger pin decays with a time constant of R ·C, while the voltage on the

anode keeps almost constant. The purpose of the trigger pin is to initiate the breakdown of

the main gap at a voltage below its nominal static breakdown voltage. When the potential

38 3. HIGH POWER SWITCHING

difference between the main electrode and the trigger pin reaches the dielectric strength of

the trigger gap, the trigger gap fires. The plasma generated by the trigger gap firing initiates

the breakdown of the main gap.

Figure 3.11 gives an example of the voltage on the anode measured by a HV voltage

probe (North Star 5.0) and the current through the switch measured by a single turn Ro-

gowski coil. The signal integrator circuit for the Rogowski coil is given in Appendix A3.

A second peak at time about 150 ns is observed in the measured current. This is due to the

reflection from the incorrectly matched TLT mounted behind the SC switch.

High repetition rate charging circuit up to 5 kHz and charging rate 1 kV/μs

From the measurements which will be described later in chapter 4.3.1, the recovery time of a

SC N2 switch is less than 1 ms. Hence a voltage source with high repetition rate exceeding

1 kHz should be used to further experimentally investigate the dielectric recovery in SC

switches. Therefore we use an up to 5 kHz charging circuit that provides 30 kV charging

voltage at rise rate of 1 kV/μs. Figure 3.12 gives the charging circuit of this 5 kHz pulsed

voltage source. The detailed circuit design and operation will be published in the Ph.D.

dissertation of my colleague F.J.C.M. Beckers.

Figure 3.12 – The charging circuit for the high repetition rate voltage source with 30 kV peak

value and 1−5000 Hz repetition rate. Ch is the high-voltage capacitor integrated in the SC

switch (B).

A typical voltage waveform measured on the anode of SC switch (B) under this charging

circuit is given in figure 3.13. The voltage applied to the switch has a rate of rise of 1 kV/μs

and a peak value of 25−30 kV.

3.3.3 SC switch (C) with larger gap width

As mentioned in chapter 3, CBs in power networks can only interrupt the arc at current zero

crossing, and the electrodes must be separated wide enough, in order to quench the arc. We

want to study the arc interruption behavior of the SCFs insulated switches. For this reason

we have designed and manufactured the larger gap SC switch (C). Since this work is the

3.3. DESIGN OF SUPERCRITICAL SWITCHES 39

−40 −30 −20 −10 0 10 20−1.5

−1

−0.5

0

0.5

1

1.5

2

2.5

3 x 104

Time [μs]

Volta

ge [V

]

Figure 3.13 – Typical voltage waveform measured on the anode in the SC switch (B) connected

to the 5 kHz charging circuit shown in figure 3.12. Gap pressure and gap width: p = 75 bar,

d = 0.25 mm.

starting point of the arc interruption study, we made the structure of the switch as simple

as possible. Hence, the construction of this switch differs considerably from the layout of

normal mechanical CBs:

− the electrodes in switch (C) are stationary, while in CBs moving electrodes are ap-

plied;

− the flushing direction in the switch (C) is perpendicular to the arc generated in the

gap, while in CBs the flushing of insulating media is in an axial direction, parallel to

the arc.

The main structure of SC switch (C) is similar to the simple SC switch (A), but with

larger inter-electrode gap distance and higher sustainable voltage. The SCF pressure in SC

switch (C) can go up to 200 bar and the gap width is adjustable in the range 0.05−5 mm.

Figure 3.14 gives a drawing of SC switch (C). The switch housing (1), the cylinder with

screw thread on the outside for gap width adjustment (2), and the electrodes (3) are all

made of brass. The plane-plane electrode heads have a diameter of 25 mm, while the rest

of the electrode bodies have a diameter of 10 mm. The material of the insulator bodies (4)

is Ertalyte. The surface of the insulator between the high voltage electrodes and groun-

ded housing has a corrugated structure, to increase the creeping distance. O-rings (5) are

employed for the high pressure sealing inside the switching chamber. Connections for gas

tubes are embedded on the housing of the switch. Compared to the design of SC switch (A)

in section 3.3.1, the cylinder body (2) creates a smooth electric field inside the insulator,

which prevents the possibility of partial discharge or breakdown of the insulator under high

electric stress.

40 3. HIGH POWER SWITCHING

(1) (2) (3) (4) (5) (6)

Figure 3.14 – The schematic of appearance and cross-section area of high voltage SC switch

(C). (1)-switch housing, (2)-metal sheath, (3)-anode and cathode, (4)-Ertalyte insulator bodies,

(5)-O-rings for high pressure sealing. In this drawing the (adjustable) gap is in the zero width

position, (6)-SCF in/outlet.

Figure 3.15 – Schematic of SCF loop for high voltage SC switch (C).

3.4. ARC INTERRUPTION TESTING CIRCUIT 41

The SCF loop for SC switch (C) is sketched in figure 3.15. The design of the N2 cylinder

and pressure regulator are the same as those of switch (B) introduced before. A flow meter

with maximum pressure of 195 bar and volume velocity in the range of 70−500 L/h is

employed to detect the flow rate of SCF in the loop, in the scenario of experiments with

forced flushing. Two pressure gauges, one upstream and one downstream of the SC switch

are applied to inspect the pressure inside the switching chamber. A pressure relief valve

with set pressure of 200 bar is employed to prevent over-pressure in the system. In the

scenario of forced flushing SC N2, the flushing of SCF through the switch is realized by

opening the valve (2) and releases N2 in to the open air.

We have built a circuit for the investigation of the arc interruption and dielectric recovery

in SC switch (C).

3.4 Arc interruption testing circuit

3.4.1 Circuit principle

We used a prototype to inspect the arc interruption and dielectric recovery characteristics of

SC switch (C). The simplified circuit in figure 3.16 describes the basic principle of the arc

interruption testing circuit.

Figure 3.16 – Simplified circuit for the arc interruption experiments.

A capacitor C1 is charged by a DC voltage source consisting of a transformer and a

rectifier, and is manually isolated from the source after being fully charged. Once the switch

S1 is closed, a capacitor C2 with value of C2 � C1 is charged by C1 via an inductance L1.

When the voltage on C2 reaches the breakdown voltage of the SC switch, the SC switch

breaks down and the current flows through the SC switch, oscillating with a frequency

depending on the value of L2 and C2. The energy stored in C1 and C2 is deposited into

the SC switch and the resistor R2 as long as the arc channel in the switch exists. Current

and voltage traces in case of successful interruption will be different from the ones in case

of continued conduction in the switch. Figure 3.17 sketches the waveforms of these two

scenarios.

If the SC switch is able to interrupt the current and can recover to a non-conducting

state before all the energy in the capacitors is dissipated, the capacitor C2 will be charged

again by C1. A transient recovery voltage will be observed on the anode of the SC switch

is shown in 3.17(a), (b). The SC switch will break down again if the voltage applied to the

42 3. HIGH POWER SWITCHING

SC breakdown

Current interrupted

SC switch re-ignition in recovery phase

(a)

I=0

V=0

No re-ignition in recovery phase

SC breakdown

Current interrupted

(b)

I=0

V=0

SC breakdown

No current interruption

(c)

I=0

V=0

current voltage

Figure 3.17 – Examples of voltages and currents (i(t)) appearing at pin 1 in the circuit of figure

3.16, in various situations. (a) successful arc interruption, SC switch undergoes re-ignition; (b)

successful arc interruption, SC switch does not re-ignite; (c) SC switch does not interrupt the arc.

switch is higher than the recovered dielectric strength, see the example in figure 3.17(a).

If the dielectric strength of the SC switch recovers faster than the voltage applied to it, no

re-ignition in the SC switch will be observed, and the typical voltage waveform given in

figure 3.17(b) will be measured.

On the other hand, if the SC switch cannot interrupt the current, all the energy in C1 and

C2 will be deposited into the discharging loop of the switch, and C2 will not be recharged by

C1. The current through the SC switch will decay to zero. The example current and voltage

waveforms under failure of current interruption is given in figure 3.17(c).

3.4.2 Real setup

The schematic of the real testing circuit is given in figure 3.18. In the circuit the capacitor

C1 is charged by transformer T1 via a large resistor R1 = 120 MΩ. Diode group D1 with

snubber circuits provides uni-directional energy flow from capacitor C1 to C2 and the rest

of the components. A grounding switch SG connected with resistor RG = 1 MΩ has been

inserted to discharge the remaining energy in the circuit after the test. A self-breakdown air

spark gap X1 acts like the switch S1 in figure 3.16. The output voltage from the resistor R2

is supplied to the SC switch (C).

The testing circuits with various groups of parameters values were simulated in Micro-

Cap circuit Simulator. By choosing the value of C1 and C2, we can determine the maximum

energy that will be deposited into the SC switch. L1 determines the rising slope of the

voltage applied to the SC switch. The current oscillation frequency, peak amplitude, and

damping time constant are controlled by the value of L2 and R2. The values of the para-

meters are chosen to be C1 = 16 nF; L1 = 115 mH; C2 = 1−2 nF; L2 = 800 μH−9.8 mH;

3.4. ARC INTERRUPTION TESTING CIRCUIT 43

Figure 3.18 – Schematic of the arc interruption testing circuit for SC switch (C).

RG

D1

C1

L1

R1

L2

C2 T1

SC switch

Figure 3.19 – Picture of the arc interruption testing circuit for SC switch (C).

R2 = 10 Ω. The current rate-of-rise and current frequency supplied by this setup are in the

range of di/dt = 0.14−29 A/μs and f = 83−285 kHz, respectively.

Figure 3.19 gives the picture of the real charging circuit. An example voltage waveform

measured on the anode of the SC switch as well as the current waveform are given in figure

3.20. The pressure of N2 under this situation is 50 bar and the gap width is 0.986 mm.

44 3. HIGH POWER SWITCHING

−20 0 20 40 60 80 100 120 140 160

0

20

40

60

Volta

ge [k

V]

−20 0 20 40 60 80 100 120 140 160−200

−100

0

100

Time [μs]

Cur

rent

[A]

Figure 3.20 – An example of the voltage and current waveforms measured with SC switch

(C) under the arc interruption testing circuit. The N2 pressure is 50 bar and the gap width

is 0.986 mm. Circuit parameters are C1 = 16 nF, L1 = 115 mH; C2 = 1.3 nF; L2 = 800 μH;

R2 = 10 Ω.

CHAPTER 4

EXPERIMENTAL INVESTIGATION OF

BREAKDOWN AND RECOVERY IN SCFS

4.1 Introduction

We have discussed the crucial characteristics of SCFs for high power switching and intro-

duced the design of several SC switches and their experimental setups in chapter 2-3. In this

chapter the dielectric strength and subsequent dielectric recovery of the SC switches under

various voltage sources are tested and the experimental results are discussed.

In section 4.2 the dielectric strength of the SC N2 switches is tested and its dependence

on pressure and gap width is investigated. The dielectric recovery of a SC N2 switch is

experimentally analyzed in section 4.3, by using repetitive voltage pulses up to 5 kHz. For

the utilization of SCFs in CBs in power networks, the current interruption capability of a

SC N2 switch is investigated in section 4.4. The radius of the discharge channels in SC N2

is optically observed by an intensified CCD camera in section 4.5, providing valuable data

for the theoretical modeling, which will be introduced later in chapter 5. Conclusions of the

experimental analysis in SC N2 switches are given in section 4.6.

4.2 Breakdown voltage analysis

The dielectric strength of a switching medium is influenced by the combination of various

parameters: medium pressure, gap width, medium flow rate, and applied voltage waveform.

The charging circuits introduced in chapter 3 generate different voltage impulses, which we

classify into three types: fast pulses with charging rate of 2 kV/ns, moderate pulses with

charging rate of 2.5 kV/μs, and slow pulses with charging rate of 1.66 kV/ms. The typical

waveforms of these voltage impulses are illustrated in figure 4.1.

45

46 4. EXPERIMENTAL INVESTIGATION OF BREAKDOWN AND RECOVERY IN SCFS

-6 -4 -2 0 2 4 6 8 10x 10-8

-2

0

2

4

6

x 104

Time [s]

Volta

ge [V

]

fast pulse, p= 80 bar, d=0.4 mm

16.5 ns

−1.5 −1 −0.5 0 0.5 1x 10−5

−2

0

2

4

6 x 104

Time [s]

Volta

ge [V

]

−0.035 −0.03 −0.025 −0.02 −0.015 −0.01 −0.005 0 0.0050

1

2

3 x 104

Volta

ge [V

]

Time [s]

moderate pulse, p=80 bar, d=0.25 mm

slow pulse, p=80 bar, d=0.24 mm

11.3 μs

34.1 ms

Figure 4.1 – Waveforms of the fast (2 kV/ns), moderate (2.5 kV/μs), and slow (1.66 kV/ms)

voltage pulses applied to the SC switches.

4.2.1 Vb under slow pulses (1.66 kV/ms)

The dielectric strength of SC switch (A) (introduced in chapter 3.3.1) is tested under the

slow voltage pulses with charging rate of 1.66 kV/ms. During the experiment various com-

binations of parameters were tested. The N2 pressure in the switch varied in a range of

10−80 bar, covering the gas and SC phases. The gap width (measured after the switch

is pressurized) of the switch covered a range of 0.1−0.5 mm. Scenarios of no flushing

or slightly flushing of the N2 through the inter-electrode gap were both investigated. With

the SCF loop described in figure 3.3, the flushing rate of the SC N2 could only be roughly

estimated, due to the setup limitation. The flow rate was calculated from the flow coeffi-

cient, which is dependent on the wheel setting (sections) of the needle valve, and from the

SCF pressure. In the needle valve one sect is 1/80 turn of the wheel. For 80 bar SC N2,

in the scenario of valve 1 sect opening, the flow rate and flow velocity are approximately

2.8×10−4 m3 · s−1 and 14 m/s in a 0.2 mm gap, respectively.

Breakdown voltages were recorded under different experimental conditions by a high

4.2. BREAKDOWN VOLTAGE ANALYSIS 47

0 10 20 30 40 50 60 70 800

5

10

15

20

25

30

Pressure [bar]

Brea

kdow

n vo

ltage

[kV]

no flushing1 sect2 sect3 sect(a)

0 0.05 0.1 0.15 0.2 0.25 0.3 0.350

5

10

15

20

25

30

Gap width [mm]

Brea

kdow

n vo

ltage

[kV]

no flushing1 sect(b)

Figure 4.2 – Averaged breakdown voltage of SC switch (A) under slow voltage slope with char-

ging rate of 1.66 kV/ms. (a) Breakdown voltage versus the N2 pressure at a fixed gap width of

0.14 mm. (b) Breakdown voltage versus the gap width at a fixed pressure of 70 bar. The relative

unit ’1 sect’ in the legend means the needle valve in the SC N2 loop is opened by 1 scale division.

For 80 bar SC N2, in the scenario of 1 sect, the flow rate and flow velocity are approximately

2.8×10−4 m3 · s−1 and 14 m · s−1 in a 0.2 mm gap, respectively.

voltage probe (North Star PVM 5.0) placed on the high-voltage side of the switch. For

each condition the averaged values for over 200 breakdowns were estimated, see figure 4.2.

From the figure, it is clear that under slow voltage pulses, generally the breakdown voltage

of SC switch (A) increases at higher N2 pressure, larger gap width and higher N2 flushing

rate. A dip of averaged breakdown voltage is observed at a N2 pressure around 40 bar. This

voltage dip near the critical pressure coincides with the reports about such phenomenon in

the breakdown voltage of SC CO2 under DC source [128]. The reason of this dip is assumed

to be the molecular clusters generation around the critical points (microscopic view) and gas

density inhomogeneity around the critical point (macroscopic view). Detailed investigation

48 4. EXPERIMENTAL INVESTIGATION OF BREAKDOWN AND RECOVERY IN SCFS

of this phenomenon and related mechanisms are beyond the scope of the present thesis

work.

4.2.2 Vb under moderate pulses (2.5 kV/μs)

The breakdown voltage of SC switch (B) (introduced in chapter 3.3.2) under voltage pulses

with a charging rate of 2.5 kV/μs is tested. During this experiment the voltage source (seen

in figure 3.10) operated at a low repetition rate of 10 Hz.

The breakdown voltage was measured under situation of no forced N2 flushing through

the gap, by a high voltage probe (North Star PVM 5.0) placed on the high-voltage side of

the switch. Figure 4.3(a) represents the breakdown voltage of SC switch (B) versus the N2

pressure at two gap widths: 0.25 mm and 0.3 mm. From the measurements we can see that

the breakdown voltage increases with N2 pressure, and no obvious tendency of saturation

was observed up to a pressure of 80 bar. Another interesting phenomenon is that no obvi-

ous voltage dip around the critical point of N2 was observed. This observation coincides

with the measured breakdown voltage in SC CO2 under pulsed voltage sources [143]. The

possible reasons as been discussed in chapter 2 are briefly repeated here: the locally en-

hanced ionization phenomena caused by the molecular clusters or accelerated electrons in

low density region [141] are responsible for the local minimum of the breakdown voltage

around the critical point.

The influence of the gap width on the dielectric strength of SC switch (B) is also invest-

igated. The measured breakdown voltage, breakdown field, and reduced breakdown field

as a function of the gap width at pressure of 37.5−90 bar are plotted in figure 4.3(b)-(c).

From the figures we can see that the increase of the pressure has less significant influence on

the breakdown voltage at smaller gap widths (e.g. 0.2 mm) than that at larger gap widths.

We expect that at small gap widths the field emission from small protrusions dominates the

breakdown behavior over a wide pressure range, whereas at larger gap widths the effect of

field emission is much less pronounced. In high pressure gases including the SC phase,

positive ions produced in the fluid can accumulate the positive space charge in the electrode

gap, and this process leads to substantially lower breakdown voltages [27, 187].

4.2.3 Vb under fast pulses (2 kV/ns)

The breakdown voltage of SC switch (A) was tested under very fast pulses with charging

rate of 2 kV/ns. N2 pressure in the switch was adjusted in a range of 5−180 bar, and the

gap width changed between 0.3 mm and 0.52 mm (after the pressurization of the switch).

Figure 4.4(a) shows the breakdown voltages of SC switch (A) as a function of the N2

pressure at a fixed gap width of 0.37 mm. Each point in the figure represents the averaged

value over 200 shots. The values in the conditions of a 200 Ω load connected and the switch

short-circuited to ground were both included. The results explicitly show that the meas-

ured voltage has different values under situations of load connected and short-circuited.

As discussed in section 3.3.1, the values with the switch short-circuited to ground repres-

ent the real breakdown voltage. We can notice the characteristics of breakdown voltage of

4.2. BREAKDOWN VOLTAGE ANALYSIS 49

0 20 40 60 80 100 120 1400

0.5

1

1.5

2

2.5

3

3.5

4 x 104

Pressure [bar]

Brea

kdow

n Vo

ltage

[V]

d=0.3 mmd=0.25 mm

(a)

0.18 0.2 0.22 0.24 0.26 0.28 0.3 0.3210

15

20

25

30

35

Gap width [mm]

Brea

kdow

n Vo

ltage

[kV]

90 bar70 bar50 bar37.5 bar

(b)

0.18 0.2 0.22 0.24 0.26 0.28 0.3 0.32

20

40

60

80

100

120

Gap width [mm]

E bd [k

V/m

m]

0.18 0.2 0.22 0.24 0.26 0.28 0.3 0.3211.21.41.61.822.2

0.18 0.2 0.22 0.24 0.26 0.28 0.3 0.3211.21.41.61.822.2

0.18 0.2 0.22 0.24 0.26 0.28 0.3 0.3211.21.41.61.822.2

0.18 0.2 0.22 0.24 0.26 0.28 0.3 0.3211.21.41.61.822.2

E bd/p

[kV/

mm

/bar

]

90 bar

70 bar

50 bar

37.5 bar

50 bar

37.5 bar

90 bar

70 bar

(c)

Figure 4.3 – Breakdown voltage of SC switch (B) under moderate voltage slopes with charging

rate of 2.5 kV/μs. (a) Breakdown voltage versus pressure at gap widths of 0.25 mm and 0.3 mm.

(b) Breakdown voltage versus gap width at pressures 37.5−90 bar. (c) Breakdown field and

reduced breakdown field versus gap width at various pressures.

SC switch (A) under fast pulses: with increasing gas pressure, the breakdown voltage in-

creases, and tends to saturate under high pressure situation. The scattering of the breakdown

voltages constricts at a pressure nearby the critical value. The measured voltages with load

connected behind the switch have larger difference from the real breakdown values above

50 4. EXPERIMENTAL INVESTIGATION OF BREAKDOWN AND RECOVERY IN SCFS

0 20 40 60 80 100 120 140 160 180 2000

10

20

30

40

50

60

70

80

90

Pressure [bar]

Brea

kdow

n vo

ltage

[kV]

load short−circuitedwith load(a)

0.25 0.3 0.35 0.4 0.45 0.5 0.55

45

50

55

60

65

70

75

Gap width [mm]

Brea

kdow

n Vo

ltage

[kV]

no flushing1 sect

(b)

Figure 4.4 – Breakdown voltage of SC switch (A) under fast voltage slopes (2 kV/ns). (a)

Breakdown voltage versus the pressure at a fixed gap width of 0.37 mm. (b) Breakdown voltage

versus the gap width at a fixed pressure of 70 bar. Each data point represents the average value

for 200 shots; ’1 sect’ means the needle valve in the SC N2 loop is opened by 1 scale division.

For 180 bar SC N2, in the scenario of 1 sect, the flow rate and flow velocity are approximately

4×10−5 m3/s and 1 m/s in a 0.4 mm gap, respectively.

the critical pressure. The reason of this phenomenon is unclear. Possible effects are men-

tioned here: above the critical pressure the switch capacitance may be higher but also the

plasma resistance might be higher, which result in the higher voltage drop across the spark

in the SC state.

The measured breakdown voltage of SC switch (A) as a function of the gap width under

a fixed pressure of 70 bar is illustrated in figure 4.4(b). During the experiment the switch

was short-circuited to ground. Scenarios of no N2 flushing and slightly flushing through the

gap were investigated. According to the experimental results, under fast voltage pulses, the

breakdown voltage of SC switch (A) does not increase with larger gap width below 0.4 mm.

However, at gap widths in the range of 0.4−0.5 mm, a slight increase of the gap width and

4.3. DIELECTRIC RECOVERY ANALYSIS 51

higher flushing rate (in low repetition rate situation) bring significant improvement of the

breakdown voltage.

4.3 Dielectric recovery analysis

Due to the gas-like high diffusivity, viscosity and liquid-like high thermal conductivity, the

heat transfer in SCFs is considered to be faster than that in gases. The experimentally

observed dielectric recovery time in an air insulated plasma switch is in the range of a few

to tens of millisecond, depending on the air flushing rate, while from rough prediction by

a simple analytic model, the recovery time in SC N2 is about 1.5 ms at the pressure of

150 bar [188]. We tested the recovery breakdown voltage of SC switch (B) under repetitive

pulses. The experimental circuits have been introduced in section 3.3.2.

4.3.1 Experiment under 1 kHz voltage source

Due to the LC resonant charging circuit of figure 3.10, the rise time of the voltage from 0 to

its peak value of 30 kV supplied by the circuit is almost constant. Under repetitive operation

mode of SC switch (B) in this testing circuit, we classify the breakdown of the switch into

two categories:

• Normal firing: at the plateau of the pulse the switch is triggered and breakdown oc-

curs;

• Pre-firing: the breakdown occurs too early, during the rising edge of the excitation.

In figure 4.5, examples of the voltage waveforms under situation of a normal firing and a pre-

firing are illustrated. When SC switch (B) undergoes a normal breakdown, it is considered

that the dielectric strength of the switch is fully recovered. The percentage of the shots

undergoing ’normal firing’ to the total shot number is defined as the recovery percentage of

the switch.

Due to the estimated fast dielectric recovery, testing was performed under the highest

repetition rate: 1 kHz. Figure 4.6 gives the recovery percentage of SC switch (B), as a func-

tion of the combinations of pressure and gap width pd, under no forced flushing situation.

A few collected experimental results at pd < 15 bar ·mm revealed that below 15 bar ·mm

the percentage of normal firing will become too low, so we performed the experiment only

above this value.

The experimental results in figure 4.6 show that at gap width d > 0.2 mm, the recovery

percentage of the SC switch achieves 80 % within 1 ms, when the pressure is above 45 bar

(corresponding to pd ≥ 18 bar ·mm). Figure 4.6 also shows an interesting phenomenon

distinguished by pd. For pd less than 20 bar ·mm, a larger gap width d contributes to faster

recovery, while at pd > 20 bar ·mm, the effect of d on the recovery percentage vanishes.

52 4. EXPERIMENTAL INVESTIGATION OF BREAKDOWN AND RECOVERY IN SCFS

−10 −5 0 5 10 15 20 25 30−15

−10

−5

0

5

10

15

20

25

30

35

Time [μs]

Volta

ge [k

V] Not fully recovered

ʼNormal firingʼ

Figure 4.5 – Examples of the voltage waveforms measured on the anode of SC switch (B), in the

situations of fully recovered (normal firing) and not fully recovered (pre-firing).

0 5 10 15 20 25 300

20

40

60

80

100

pd [bar⋅mm]

Rec

over

y pe

rcen

tage

[%]

d=0.4 mmd=0.3 mmd=0.2 mmd=0.45 mm

Figure 4.6 – The recovery percentage of SC switch (B) estimated with experiment, under 1 kHz

repetitive source.

4.3.2 Experiment under 5 kHz voltage source

The recovery time of SC switch (B) proves to be less than 1 ms, as concluded from the

experimental results under 1 kHz repetitive voltage source. It is worthwhile to test the re-

covery breakdown voltage of the SC switch under shorter time lags between two succeeding

pulses. The voltage source introduced in figure 3.12 supplies repetitive voltage pulses with

a time lag of ≥ 200 μs between two succeeding pulses, which allows us to investigate the

dielectric recovery of the SC switch to investigate the recovery at short times between the

pulses.

4.3. DIELECTRIC RECOVERY ANALYSIS 53

The recovery breakdown voltage of SC switch (B) is tested under the source with vari-

able repetition rates in range of 1−5000 Hz (corresponding to a time lag between the two

succeeding pulses in range of 200 μs−1 s) and peak voltage reaches 30 kV. In this group of

experiments we use pre-firing mode, which means the breakdown occurs below the charging

voltage reaches the peak value. No SCF flushing is supplied in this group of experiment.

N2 pressure between 10 bar and 70 bar, and gap width of 0.15 mm and 0.25 mm were used.

Figure 4.7 gives the measured recovery breakdown voltage of SC switch (B) at pressures

of 30−75 bar and gap width of 0.25 mm. Generally the recovery breakdown voltage, at

any time lag between pulses, increases with the N2 pressure. The difference of recovery

breakdown values at various time lags is not significant with 0.25 mm gap width. But from

the envelope line regarding to 5 Hz and 5000 Hz repetition rate, we can still observe that

the recovery breakdown voltage decrease at higher repetition rates.

The results with gap width of 0.15 mm and pressure in range of 20−70 bar are given

in figure 4.8. From the results we find that the recovery breakdown voltage at the gap width

of 0.15 mm increases with pressure. At the same pressure, the measured values have larger

scattering regarding the repetition rate, and seems not to be linear with the repetition rate.

Comparing the recovery breakdown value at different gap widths, we find that at the same

pressure the recovery breakdown voltage at 0.25 mm has almost twice the value of that at

0.15 mm.

20 30 40 50 60 70 806

8

10

12

14

16

18

20

22

24

26

Pressure [bar]

Rec

over

y br

eakd

own

volta

ge [k

V]

60

5 Hz (0.2 s) 100 Hz (10 ms) 1000 Hz (1 ms) 2500 Hz (400 μs) 5000 Hz (200 μs)

Figure 4.7 – Results from the 1−5000 Hz pulse source: the recovery breakdown voltage of SC

switch (B) versus pressures at a gap width of 0.25 mm in pre-firing mode, as a function of the

time lag between pulses. No SCF flushing is supplied during the experiment.

54 4. EXPERIMENTAL INVESTIGATION OF BREAKDOWN AND RECOVERY IN SCFS

10 20 30 40 50 60 70 805

6

7

8

9

10

11

12

13

14

15

Pressure [bar]

Rec

over

y br

eakd

own

volta

ge [k

V]

70

1 Hz (1 s) 250 Hz (4 ms) 2500 Hz (400 μs) 5000 Hz (200 μs)

Figure 4.8 – Results from the 1−5000 Hz pulse source: the recovery breakdown voltage of SC

switch (B) versus pressures at a gap width of 0.15 mm in pre-firing mode, as a function of the

time lag between pulses.

4.4 Current interruption analysis

4.4.1 Parameter settings

The arc interruption characteristics of SCFs are investigated by experiments presented in

this section. The working principle of a synthetic source circuit has been introduced in

section 3.3.3. The oscillation frequency and amplitude of the arc current going through the

SC switch after the breakdown can be tuned by adjusting the inductance L2 and capacitance

C2 in the circuit shown in figure 3.18.

We applied various values of L2 during the tests: 800 μH, 3.8 mH, 6.8 mH, and 9.8 mH.

The value of C2 is set to be 1 nF, 1.3 nF, or 2 nF. The examples of the current waveforms

with different settings of L2 at C2 = 1.3 nF are given in figure 4.9. From the figure it is

clear that with a fixed C2, larger L2 results in lower oscillation frequency of the arc current

and longer duration of the current. Under a fixed L2, different C2 causes only slightly

different current waveforms. Figure 4.10 gives the examples of the current waveforms with

C2 = 1.3 nF and C2 = 2 nF, respectively, at L2 = 800 μH. We tested the current interruption

performance of SC switch (C) at various pressures and gap widths under this circuit. The

influence of the SC N2 flushing through the gap on the current interruption performance is

investigated. In the following the experimental results are given.

4.4.2 Experimental results

The experimental results of the current interruption testing for SC switch (C) (introduced in

chapter 3.3.3) under combinations of various parameters are summarized in table 4.1. From

4.4. CURRENT INTERRUPTION ANALYSIS 55

-100 0 100 200 300 400 500 600 700 800 900 1000-50

0

50

Cur

rent

[A]

-100 0 100 200 300 400 500 600 700 800 900 1000-50

0

50

Cur

rent

[A]

-100 0 100 200 300 400 500 600 700 800 900 1000-50

0

50

Time [ s]

Cur

rent

[A]

L2=9.8 mH

L2=3.8 mH

L2=800 H

3 A/μs

4.2 A/μs

29 A/μs

0.14 A/μs

0.3 A/μs

1.4 A/μs

(a)

(b)

(c)

Figure 4.9 – Current through the SC switch (C) with different settings of inductance L2 in

the arc interruption testing circuit (figure 3.18), under N2 pressure of 50 bar and gap width of

0.986 mm. The value of C2 is 1.3 nF. The measured current rate-of-rise and current frequency

is di/dt = 0.14−3 A/μs, f = 100 kHz for L2 = 9.8 mH; di/dt = 0.3−4.2 A/μs, f = 83 kHz for

L2 = 3.8 mH; di/dt = 1.4−29 A/μs, f = 285 kHz for L2 = 800 μH, respectively.

0 50 100 150 200 250−100

−50

0

50

100

Cur

rent

[A]

0 50 100 150 200 250−100

−50

0

50

100

Time [μs]

Cur

rent

[A]

C2=2 nF

C2=1.3 nF

Figure 4.10 – Current through the SC switch (C) with different settings of capacitance C2in

the arc interruption testing circuit (figure 3.18), under N2 pressure of 50 bar and gap width of

0.986 mm. The value of L2 is 800 μH.

the results we find that under the current waveform shown in figure 4.9(b)-(c) (correspond-

ing to L2 ≤ 3.8 mH), the SC switch was not able to interrupt the current at a gap width of

d ≤ 1 mm. However, at a gap width of d ≥ 1.2 mm, we observed temporary current inter-

ruptions at the current zero crossing point, at t = 30 μs or later after the breakdown of the

56 4. EXPERIMENTAL INVESTIGATION OF BREAKDOWN AND RECOVERY IN SCFS

switch.

An example current waveform at p = 60 bar and d = 1.29 mm is illustrated in figure

4.11. The circuit parameters are L2 = 3.8 mH and C2 = 1 nF. No forced N2 flushing was

supplied during the experiment. From the enlarged view of the selected time region in

figure 4.11, we see that from 29.4 μs after the breakdown onward, at every current zero

crossing point, the current is interrupted temporarily, both in positive and negative slopes.

The arc current measured by the current probe indicated in figure 3.18 is influenced by the

current flowing in C2, and also by the current induced by the stray capacitance of the SC

gap. This explains the slightly negative current during the charging process of capacitor C2

(in the time between −10 μs and 15 μs in figure 4.11), and the displacement of the current

interruption from zero crossing in the measured current waveforms.

0 50 100 150 200 250 300 350 400

-40

-20

0

20

40

60

Time [ s]

Curre

nt [A

]

29.3 29.4 29.5 29.6-2

0

2

53 53.5 54-10

-5

190 192 194 196 198

-2

0

2

Figure 4.11 – Measured current through SC switch (C) under the arc interruption testing circuit

given in figure 3.18. Pressure 60 bar, gap width 1.29 mm, L2 = 3.8 mH, and C2 = 1 nF. No

forced N2 flushing was supplied during the experiment.

In case of the arc current shown in figure 4.9(a), a successful interruption was observed

at 2 ms after the breakdown in a gap of d > 1.7 mm, with forced flushing estimated to be

50 Liter/h (corresponding to 2.73 m3/h at STP), i.e. flow velocity approximately 0.05 m/s

in a 1.7 mm gap. Examples of the arc voltage and arc current under the situation of success-

ful arc interruption are illustrated in figure 4.12 and figure 4.13, in the scenario of forced N2

flushing with volume of 50 Liter/h and no flushing, respectively. In the arc voltage meas-

urements the voltage induced in the measurement loop by the oscillating current, though

not shown here, is measured to be � 10 % of the signal.

Figure 4.12(b) gives the enlarged view of the selected two time regions for the tempor-

ary current interruptions: t = 901.8 μs and t = 906.4 μs. From the figure we can see that

the current was temporarily interrupted, which can be identified by a short duration rise of

4.4. CURRENT INTERRUPTION ANALYSIS 57

0 1000 2000 3000 4000 5000 6000-500

0

500Vo

ltage

[V]

6

Temporary interruption

Successful interruption

500 V

0 1000 2000 3000 4000 5000 6000-4

-2

0

2

4

Time [ s]

Cur

rent

[A]

900 950 1000 1050 1100-4

-2

0

2

4

6

Time [ s]

Curre

nt [A

]

(a) Voltage and current waveforms in SC switch (C). An enlarged view of a half cycle of the current

waveform, in the range of t = 900−1100 μs, is plotted as well.

902 904 906 908 910-400

-200

0

200

400

Time [ s]

Volta

ge [V

]

902 904 906 908 910-0.5

0

0.5

Time [ s]

Curre

nt [A

]

(b) Enlarged view of three selected time regions where temporary current interruptions are observed:

t = 901.8 μs and t = 906.4 μs. The other current interruption moments are not enlarged here.

Figure 4.12 – Voltage and current waveforms measured in SC switch (C) in the arc interruption

circuit. Pressure 50 bar, gap width 1.814 mm, L2 = 9.8 mH, and C2 = 1 nF. Forced N2 flushing

of about 50 Liter/h (2.73 m3/h at STP), i.e. flow velocity approximately 0.05 m/s in the gap,

was supplied during the experiment.

transient recovery voltage. After a temporary interruption of 0.2−0.3 μs , the SC switch

undergoes a re-ignition, which is represented by the sudden voltage collapse and continu-

58 4. EXPERIMENTAL INVESTIGATION OF BREAKDOWN AND RECOVERY IN SCFS

0 1000 2000 3000 4000 5000 6000-500

0

500Vo

ltage

[V]

0 1000 2000 3000 4000 5000 6000-4

-2

0

2

4

6

Time [ s]

Curre

nt [A

]

2.35 ms

Successful interruption

-250 V

Figure 4.13 – Voltage and current waveforms measured in SC switch (C) in the arc interrup-

tion circuit. Pressure 50 bar, gap width 1.814 mm, L2 = 9.8 mH, and C2 = 1 nF. No forced N2

flushing was supplied during the experiment.

ation of (arc) current. The sudden collapse of the voltage indicates that the switch undergoes

a dielectric breakdown, i.e., the arc was interrupted thermally before the re-ignition of the

switch. After about 2 ms the current is successfully interrupted, and the voltage on the an-

ode of the switch rises up to 500 V and remains almost constant. By comparing figure 4.12

and figure 4.13 we observed that the current was interrupted 0.15 ms later without flushing

than with forced N2 flushing through the gap. Without forced flushing, the arc voltage in

SC N2 switch has a value of ≥ 100 V from 100 μs onward after the breakdown. Under

situation of forced flushing the value of arc voltage is higher than that without flushing, and

increases after each temporary interruption in the scenario of forced flushing. This increase

might reflect the negative current-voltage characteristics of arcs in gaseous media.

The dependence of the interruption capability on the pressure of the medium and on the

flushing situation was investigated next. The current and voltage slopes at the moment of

successful arc interruption di/dt and du/dt at the pressure of 10−40 bar are illustrated in

figure 4.14. The value of the current rise slope di/dt first slightly increases with pressure,

then for p > 20 bar, decreases slightly with pressure, while in conventional gas media the

behavior is a monotone increase with pressure. This abnormality needs more investiga-

tion. The rate-of-rise of transient recovery voltage du/dt increases with pressure, which is

consistent with the observations in gas media. The results under forced flushing condition

presented in figure 4.14 suggest that forced flushing results in faster recovery of the former

arc channel. However, from the rate-of-rise of the dielectric recovery voltage corresponding

to the temporary arc interruption shown in figure 4.15, we observe that the value of du/dt,

at 0.9 ms and 0.43 ms after the current initiation, decreases with the media pressure. This

phenomenon needs further investigation as well.

4.4. CURRENT INTERRUPTION ANALYSIS 59

0 5 10 15 20 25 30 35 40 450

1000

2000

3000

4000

5000

6000

Pressure [bar]

di/d

t [A/

s]

Forced flushing

Non-flushing

d=2.139 mm d=2.112 mm

d=2.151 mm

d=2.195 mm

0 5 10 15 20 25 30 35 40 450

1

2

3

4

5

6 x 106

Pressure [bar]

du/d

t [V/

s]

Forced flushing

Non-flushing

d=2.139 mm

d=2.112 mm

d=2.151 mm d=2.195 mm

Figure 4.14 – The rate-of-rise of current di/dt and rate-of-rise of recovery voltage du/dt at the

moment of successful arc interruption in SC switch (C), under situation of forced flushing and

no flushing situation, at various pressures.

15 20 25 30 35 40 45 50 55

4

6

8

10

12x 108

Pressure [bar]

du/d

t [V/

s]

0.89 ms from current intiation0.43 ms from current intiation

d=1.814 mm

d=1.79 mm

d=1.763 mm

d=1.744 mm

Figure 4.15 – The rate-of-rise of recovery voltage du/dt as the function of the pressure at differ-

ent moment after the initiation of the arc in the switch gap, under the situation of forced flushing

in the gap.

60 4. EXPERIMENTAL INVESTIGATION OF BREAKDOWN AND RECOVERY IN SCFS

Tabl

e4.

1–

Ex

per

imen

tal

resu

lts

of

the

arc

inte

rru

pti

on

test

ing

of

SC

swit

ch(C

).’×

’:fa

ilu

reo

fcu

rren

tin

terr

up

tio

n;

’T’:

cap

able

of

tem

po

rary

curr

ent

inte

rru

pti

on

;’�

’:su

cces

sfu

lcu

rren

tin

terr

up

tio

n.

L2=

3.8

mH

,C

2=

1.2

nF

L2=

6.8

mH

,

C2=

1.0

nF

SC

swit

chd≤

1m

md>

1.2

mm

d>

1.4

mm

d>

1.4

mm

(C)

p[b

ar]

20

30

40

50

20

30

40

50

60

50

50

60

Cu

rren

td

[mm

]

Inte

rru

pti

on

0.9

17

0.9

41

0.9

56

0.9

86

1.2

11

.24

1.2

51

.26

51

.29

1.4

96

1.4

96

1.5

13

No

flu

shin

××

×T

TT

TT

TT

T

Fo

rced

flu

shin

××

×T

TT

T-

TT

T

L2=

9.8

mH

,C

2=

1.0

nF

d>

1.4

mm

d>

1.7

mm

d>

2.0

mm

p[b

ar]

30

40

50

60

20

30

40

50

10

20

30

40

d[m

m]

1.4

58

1.4

73

1.4

96

1.5

13

1.7

44

1.7

63

1.7

90

1.8

14

2.1

12

2.1

36

2.1

51

2.1

95

No

flu

shin

gT

TT

T�

�T

��

��

�F

orc

edfl

ush

ing

TT

TT

��

��

��

��

4.5. ICCD IMAGE OF DISCHARGE IN SC N2 61

4.5 ICCD image of discharge in SC N2

Discharge imaging inside the SC switch provides valuable information for the theoretical

analysis of the breakdown and recovery in SCFs. In this section the photographs of the

discharge channels in SC N2 switch are taken with an intensified CCD camera mounted

with a microscope lens. The ICCD camera is a 4 Picos from Stanford Computer Optics

with 780×580 pixels, 8.3×8.3 μm pixel size.

Figure 4.16 – Schematic of the electric circuit for triggering of ICCD camera.

The camera is synchronized with the pulsed voltage supplied to the trigger electrode

of the SC switch, using a triggering circuit sketched in figure 4.16. Simultaneously with

the charging of capacitor Ch in the main circuit (capacitor embedded in SC switch (B)),

the capacitor C2 in the triggering circuit, via an inductance L2 = 21 mH, is charged with a

relatively slower voltage increasing slope, but to higher amplitude than that on Ch. During

the charging process of Ch, the voltage on the trigger pin also increases due to the LCR

system explained in section 3.3.2. In order to prevent the voltage increases on the right

side of S1 (2-stage TLTL side), an isolating capacitor Ci = 200 pF is applied. From the

impedance equation Z = 1/(ω ·Ci) we can see that impedance of Ci is high at low frequency,

hence it can block the energy flow from the trigger pin to S1 during the slow charging

process of Ch.

At a time moment after the voltage on Ch reaches the plateau, the voltage on C2 reaches

the threshold voltage of the air switch S1. Once S1 breaks down, a voltage impulse is

generated and transmitted to the trigger electrode of SC switch (B) through a 2-stage TLT.

The 2-stage TLT has two functions: 1) to amplify the peak-voltage of the impulse by two

62 4. EXPERIMENTAL INVESTIGATION OF BREAKDOWN AND RECOVERY IN SCFS

times, and 2) to introduce a delay of 100 ns for the impulse to reach the trigger electrode of

SC switch (B). Ci, under this high frequency pulse, has low impedance, hence the voltage

pulse can transmit through Ci, and be applied to the trigger pin.

-2 -1 0 1 2 3x 104

-1

0

1

2

3

4

x 104

Time [ns]

Volta

ge [V

]

-400 -200 0 200 400 -1

0

1

2

3

4 x 10 4

Time [ns]

Volta

ge [V

]

trigger pin spark gap S1

camera opening

signal sent to camera

SC switch anode

Figure 4.17 – The typical voltage waveforms measured on the main capacitor Ch, trigger capa-

citor C2, isolating capacitor Ci, and the trigger pin of the SC switch.

-100 0 100 200 300 400 500 600

0

100

200

300

400

500

600

700

800

Time [ns]

Curre

nt [A

]

Current through SC switchCamera monitoring signal

Camera opening

Gap width 0.32 mm

Discharge channel at camera opening

Figure 4.18 – Imaging of discharge in the SC switch (B) with an ICCD camera. The N2 pressure

is 70 bar and the gap width 0.32 mm. The exposure time of the camera is 0.3 ns; the ND filter

intensity is 100 X. The camera opening signal illustrated in figure 4.18 represents the feed back

signal from the ICCD camera to the oscilloscope. The time delay for the waveforms caused by

the cables has already been deducted.

At the moment of S1 firing, a noise pick up coil placed nearby S1 induces a voltage sig-

4.5. ICCD IMAGE OF DISCHARGE IN SC N2 63

nal. Via an integrator circuit shown in appendix A2 and a buffer circuit, this signal serves

as the triggering signal for the ICCD camera. The trigger signal is sent to the camera about

100 ns earlier than the firing of the main gap. This 100 ns compensates the reaction time of

the camera, in practice ≈ 97 ns (including the delay of signal generator and internal delay

of ICCD camera). Once the voltage pulse reaches the trigger electrode and superimposes

on the originally induced voltage, the trigger gap (toroidal gap width ≈ 0.1 mm) fires and

initiates the breakdown of the main gap. The opening of the ICCD camera is synchronized

with the breakdown of the SC switch, hence to capture the discharge channel in SCF. The

time sequence of the typical voltage waveforms measured on the main capacitor Ch, the trig-

gering capacitor C2, the isolating capacitor Ci, and on the trigger electrode of the SC switch

during the operation is illustrated in figure 4.17. The time delay of the signal transmission

caused by the cable has been deducted from the waveforms shown in figure 4.17.

0 ns

5 ns

10 ns

Td:

60 ns

80 ns

Pressure: 70 bar Gap width: 0.38 mm Breakdown voltage: 25 kV Exposure time: 1 ns ND filter intensity: 100 X

Pressure: 40 bar Gap width: 0.35 mm Breakdown voltage: 25 kV Exposure time: 3.5 ns ND filter intensity: 200 X

Figure 4.19 – Images of the discharge channels in the SC N2 switch (B) taken by an ICCD

camera. Td: time moment after the current appearing in the gap.

The light emission from the SC N2 breakdown is very strong. In order to prevent the

overexposure of the camera, a neutral density (ND) filter (filtering intensity 2−400 X) is

placed between the optical window of the SC switch and the microscope lens of the ICCD

camera. At the moment of current detected in the SC N2 gap, the discharge diameter meas-

ured as full width at half maximum (FWHM) of the peak intensity is estimated to be 70 μm,

as can be seen in figure 4.18. This value is larger than the predicted streamer diameter by

the similarity law (∼ 3 μm at 70 bar, as calculated from the parameters in table 5.2 given in

chapter 5), indicating that the images we captured is somewhat after the streamer has bridges

the gap and expanded. Here the possible explanation is given. The streamer propagation

velocity in N2 at a pressure of 1 bar was measured to be 7×104 m/s under the applied elec-

64 4. EXPERIMENTAL INVESTIGATION OF BREAKDOWN AND RECOVERY IN SCFS

tric field of 0.31 kV/mm [189], and the velocity increases with the applied electric field.

Results in [190] indicate that the streamer velocity is inversely proportional to the medium

pressure. If we assume a linear increase of the streamer velocity versus the electric field,

the streamer velocity at the pressure of 70 bar under the electric field of 80 kV/mm is es-

timated to be 2.58×105 m/s, i.e., the streamer transition time across a 0.32 mm SC N2 gap

is 1.2 ns. Fast expansion of the streamer channel is assumed to happen, from the streamer

bridging the gap till the current is detected by our current sensor. We observe typically

only one spark channel during the breakdown of the SC switch, at varying positions of the

electrode ring.

Figure 4.19 shows the images of the discharge at Td = 0−80 ns (Td means time after

the current appeared in the gap) at p = 70 bar, d = 0.38 mm; as well as at Td = 100−600 ns

at p = 40 bar, d = 0.35 mm. From the images we observe that the bright channel expands

in the time span of Td = 0−80 ns. From Td = 100 ns onward, the diameter of the bright

channel keeps almost constant, while only the intensity of light emission becomes weaker.

It is reasonable to conclude that for the discharge channel in SC N2, fast expansion happens

at time Td ≤ 100 ns. It agrees with the observation in [191, 192] that fast expansion of the

spark radius happens within the first few hundred nanoseconds after the spark onset.

4.6 Conclusions

In this chapter we investigated the dielectric strength, dielectric recovery, and current inter-

ruption capability of SC N2 switches. The electric field across the SC gap and the discharge

radius were observed, providing important data for the theoretical simulations which will be

introduced later in chapter 5. The following conclusions are drawn from the experimental

results.

Dielectric strength

The dielectric strength of SC N2 have been recorded under different voltage pulses: slow

(1.66×103 kV/s), moderate (2.5×106 kV/s), and fast (2.0×109 kV/s) pulses.

Figure 4.20 summarizes the breakdown field of SC N2 under theses pulses at a regime

of gap width for N2 pressure of 70 bar. Data for other pressure values are not available.

From the dashed line in the figure we can clearly see that at fixed gap width and pressure

e.g., p = 70 bar and d = 0.3 mm, the breakdown field in SC N2 increases under increased

voltage slope of the impulses. Under the same voltage pulse, the breakdown field is higher

at smaller gap width.

Dielectric recovery

The dielectric recovery characteristics of a SC N2 are derived from the experimental results:

• The recovery breakdown voltage increases with N2 pressure and gap width;

4.6. CONCLUSIONS 65

40

60

80

100

120

140

160

180

200

Brea

kdow

n fie

ld [k

V/m

m]

kV/s kV/s kV/s

Figure 4.20 – Breakdown field of SC N2 under slow (1.66×103 kV/s), moderate

(2.5×106 kV/s), and fast (2.0×109 kV/s) charging slopes, at the pressure of 70 bar. Each

bar represents a regime of gap width. The dashed line represents the breakdown field at gap

width of 0.3 mm under the three voltage rising rates.

• The recovery breakdown voltage decrease at higher repetition rate at gap width of

0.25 mm;

• The recovery breakdown voltage at smaller gap width (0.15 mm) show less significant

relationship to the repetition rate compared to that at larger gap width (0.25 mm).

Current interruption capability

The current interruption capability of high-frequency (≥ 7 kHz) and low (< 500 A) cur-

rent of SC N2 is investigated experimentally. From the experimental results, we draw the

following conclusions:

I. Under the charging voltage supplied by our testing circuit (50−70 kV), the cur-

rent with rate-of-rise in the range of 0.14−3 A/μs and oscillation frequency up to

100 kHz can be successfully interrupted in a SC switch with fixed electrodes, at ap-

proximately 2 ms after the current initiation;

II. Higher pressure results in a slight decrease of di/dt at the moment of successful arc

interruption, and an increase of the rate-of-rise of transient recovery voltage du/dt;

III. Forced flushing results in faster recovery of the former arc channel: increased arc

voltage, earlier successful current interruption, and increased rate-of-rise of transient

recovery voltage du/dt.

At the current interruption the returning voltage was between 200−500 V at 1.5 mm

gap width. The current slope di/dt at the interruption moment was between 2000 and

5000 A/s, in a 40 bar, 2.2 mm gap.

66 4. EXPERIMENTAL INVESTIGATION OF BREAKDOWN AND RECOVERY IN SCFS

Higher arc voltage is beneficial to limitation of di/dt and thus arc current crosses current

zero earlier. The increased arc voltage observed in SC switch under forced N2 flushing

situation indicates the advantage of SC N2 in arc interruption. Successful arc interruption

within 2 ms in non-moving contacts and small inter-electrode distance in present work also

provides evidence of high arc interruption capability of SC N2.

CHAPTER 5

THEORETICAL MODELING OF

DISCHARGE AND RECOVERY IN SCFS

The content of this chapter is based in parts on two recent publications by the author andco-authors of this work, see publications [188] and [7]. The writer of this thesis is firstauthor and acknowledges the contributions from the co-authors of these papers.

5.1 Introduction

The dielectric strength and subsequent dielectric recovery in SC N2 have been studied by

experimental investigations (chapter 4). The dielectric strength of SC N2 is in the range of

60−180 kV/mm, which is as high as most solid dielectrics. The dielectric strength of a SC

N2 switch recovers to 80 % of the cold breakdown value within 200 μs after the breakdown.

In order to verify the superiority of SCFs in high power switching, theoretical analysis is

also an important approach to understand the discharge characteristics of SCFs.

In this chapter we introduce two models for the simulation of the discharge and recovery

processes in SCFs. In section 5.2 we introduce a simple analytic model. The purpose of this

simple model is to get a rough idea about the recovery time of a SCF switch, thus to provide

design data for the SC switches introduced earlier in chapter 3. The electric field across the

gap during the discharge of SC N2 is analyzed with simplified circuits in section 5.3. In

section 5.4 an extended physical model is generated, aiming on deeply understanding the

discharge and recovery characteristics of a SCF.

67

68 5. THEORETICAL MODELING OF DISCHARGE AND RECOVERY IN SCFS

5.2 Simple analytic model

5.2.1 Model description

The physical model of a SC switch in this model is introduced in figure 5.1. The switch is

composed of an anode (a), a hollow-cylindrical trigger electrode mounted inside the anode

(b), and a plane cathode (c). The anode is a 40.0 mm cup with a hole of 21.0 mm in dia-

meter. A cylindrical trigger electrode with inner diameter of 9.0 mm and outer diameter of

18.0 mm is mounted in the hole of the anode, forming a gap distance of 1.5 mm between

the trigger electrode and the anode. The axial thickness of the plane cathode is 50 mm, and

distance between anode and cathode is in the range of 0−10 mm. The medium is blown

into the spark gap from both the trigger gap and the center of the trigger electrode, then

flows out via six symmetrical exists, with the arrow indicating the gas flow direction.

Figure 5.1 – Schematic of the switch for the simple analytical model. (a) anode; (b) hollow

cylindrical trigger pin; (c) cathode; (d) example of spark channel generated in the switch.

When the switch breaks down, we assume that all the energy from the external source is

deposited into the spark channel (d) generated in the inter-electrode gap shown in figure 5.1.

In order to analyze the recovery performance of the switch, we calculate the temperature

decay of the spark channel by assuming two separate processes: adiabatic expansion and

heat transfer (the latter being adapted from a model with spherical electrodes in [193]).

The process of volume expansion is much faster than that of the heat transfer, so these two

processes are assumed to happen in succession. The criterion of recovery of the switch is

defined as the moment at which the temperature inside the spark channel drops to a value

of 550 K, corresponding to a breakdown voltage equal to ≈ 80 % of the static dielectric

strength [194].

This simple thermodynamic model is assumed to be suitable for an estimate of the re-

covery time in a SCF, because:

I) In our range of temperature T and pressure p the behavior is near the behavior of an

ideal gas. Although SCF has density ρ similar to liquids, its compressibility is high

5.2. SIMPLE ANALYTIC MODEL 69

as in gases. This makes the adiabatic expansion law applicable for SCF.

II) The heat transfer model is general and applies to both gases and liquids.

5.2.2 Model Formulation

Once the switch breaks down, a finite amount of energy E (in our simulation we take the

value as 0.7 J) suddenly releases into a cylindrical spark channel developed in the inter-

electrode gap [195]. The initial condition of our simulation follows Plooster’s assumption:

a very rapid heating of a column of gas in very short time, before it starts to expand [196].

This means we assume a cylinder with homogeneous temperature and density, following

the state equation of a real gas. The external gas pressure, temperature and flow velocity

are kept constant in time and space. Gas inside the cylindrical spark channel undergoes a

rapid temperature rise while the gas density remains constant and equals to the background

density, following the equation:

E = cvρ0V0(T0 −Tg,0), (5.1)

in which cv [J/(kg ·K)] is the isochoric specific heat capacity of gas, Tg,0 = 300 K the tem-

perature of the gas before energy deposition, T0 [K] the temperature of the channel after

heating, ρ0 [kg/m3] the gas density after heating (equaling to the background density), V0

[m3] the initial volume of spark channel.

The volume of the cylindrical spark channel has to be given as an initial parameter. It

was reported that limiting temperature exist for specific gases, which is reached in a suffi-

ciently strong discharge [197]. As the limiting temperature is reached (in air 43000 K and in

N2 41000 K), the discharge emission spectrum is close to that of the blackbody, and further

released energy does not lead to an increase in the discharge plasma temperature. Instead,

the channel diameter increases, causing a larger activated gas volume [198]. So the initial

radius of the spark channel R0 can be calculated from equation (5.1) with T0 = 41000 K (for

N2). If the calculated radius R0 is less than 50 μm, then R0 is set to be R0 = 50×10−6 m.

V0 is adapted to the new value according to R0, and the value of initial pressure p0 [Pa]

before expansion can be calculated from the gas state equation. It is clear that with constant

density, increasing temperature causes large increase of gas pressure. The theory of cyl-

indrical strong shock waves gives the asymptotic solution for a strong shock radius versus

time [196]:

t0 =R2

0

Rc · a , (5.2)

in which Rc =√

E/(lgapBγpg,0) [m] is a characteristic value determined by the initial con-

ditions; B is a dimensionless constant specific to the characteristics of gases: 3.94 for air

and 3.37 for N2; γ = cp/cv is the ratio of specific heats; a [m/s] is the velocity of sound in

the background gas; lgap [m] is the inter-electrode gap width; pg,0 [Pa] is the gas pressure

before the energy deposition. A time of t0 [s] is needed for the spark to expand from the

characteristic value Rc [m] to the initial radius R0 [m] in our situation.

70 5. THEORETICAL MODELING OF DISCHARGE AND RECOVERY IN SCFS

Following this initially very rapid heating, the spark channel starts to expand due to the

pressure difference between the in- and outside of the channel, in which process, conserva-

tion of mass is applicable. During the volume expansion process, no heat transfer between

the spark channel and the environmental gas is considered (adiabatic expansion). The pres-

sure and temperature change due to the adiabatic expansion is described by equation (5.3):

p1

p0=

(V0

V1

)γ; (5.3a)

T1

T0=

(V0

V1

)γ−1

, (5.3b)

in which notation 0, 1 stands for before and after expansion respectively; γ = cp/cv is the

ratio of specific heats. The adiabatic expansion stops when the pressures in and outside the

channel are equal p1 = pg,0, i.e., the left side of equation (5.3a) equals pg,0/p0. The radius

of the spark channel after adiabatic expansion R1 [m] can be calculated with the equation:

R1 =

√V1

π · lgap. (5.4)

This adiabatic expansion is assumed to follow the the theory of moderate shock waves, so

the time duration of the expansion, denoted as t1 [s], can be calculated as equation [199]:

t1 =

√E

pg,0 · lgapγ ·B · a2+

R21

a2. (5.5)

After the adiabatic expansion, the model continues with the start of the heat transfer

phase. Now, heat transfer from the channel to the surroundings is seen as the only contribu-

tion to the temperature decay of the spark channel. In the heat transfer process the governing

equation is:

Q = (Tg(t2)−Tg,0)S =−cp ·m dT

dt2, (5.6)

where Tg(t2) [K] is the gas temperature in the spark channel; S [W/K] is sum of the products

of heat transfer coefficients and surface areas; m [kg] is the mass of gas inside the spark

channel. The term S is composed of the heat convection part (to the environmental gas)

with surface area Aconv [m2], and heat conduction part (to the electrodes) with surface area

Acond [m2], and the details are given by equation:

S =Nu ·kf

LAconv+

kaver

xAcond , (5.7)

where kf [W/(m ·K)] is the coefficient of thermal conduction at film temperature Tf [K]

(arithmetic mean of the spark channel wall temperature and the far-end gas temperature);

5.2. SIMPLE ANALYTIC MODEL 71

kaver [W/(m ·K)] is the averaged thermal conductivity coefficient of the hot gas over the

temperature decay range; x = 5×10−2 m is the length of the electrodes; Nu (Nusselt num-

ber ,dimensionless) is calculated with physics of forced heat convection across a circular

cylinder [200]:

Nu = C ·RemPr1/3; (5.8a)

Pr = υ/D; (5.8b)

Re = uL/υ , (5.8c)

in which Pr is Prandtl number (dimensionless); Re is Reynolds number (dimensionless); u

[m/s] is the velocity of gas flowing through the gap; υ [m2/s] is the kinetic viscosity of the

gas; D [m2/s] is the thermal diffusion coefficient of the gas. The constants C and m for

equation (5.8) can be found in table 5.1.

Table 5.1 – Constants for equation (5.8) for circular cylinders in cross flow [200].

Re 0.4−4 4−40 40−4000 4000−4×104 4×104 −4×105

C 0.989 0.911 0.683 0.193 0.027

m 0.330 0.385 0.466 0.618 0.805

The analytic solution for the gas temperature Tg(t2) in equation (5.6) is expressed as:

Tg(t2)−Tg,0

T1 −Tg,0= exp

( −t2

cpρV/S

), (5.9)

in which τ = cvρV/S is the time constant of the exponential decay of the gas temperature in

the heat transfer stage; T1 is the gas temperature after adiabatic expansion.

5.2.3 Results and discussions

The recovery time of a SC N2 switch after breakdown is calculated with this simple model.

Figure 5.2 gives the prediction of the recovery time of a SC switch insulated with 300 K,

150 bar SC N2, at a gap width of 0.4 mm and various flow rates after breakdown accompan-

ied by 0.7 J energy deposition. The recovery time shown in figure 5.2 consists of three parts:

1) t0: the time needed for the spark channel to expand from the characteristic radius Rc to

the initial radius R0; 2) t1: the time needed to expand from R0 to the radius after the adia-

batic expansion R1; 3) t2: the time needed for the cooling of the gas temperature to 550 K.

The value of t0 and t1 are found be in nanosecond and microsecond range, respectively.

Hence the time of heat transfer is the major part of the total recovery time.

With flow rates up to 0.675 m3/h (flow velocity equals to 6 m/s in a 0.4 mm gap) at

actual pressure and temperature (corresponding to 98 m3/h at STP) we see the following

phenomenon: a larger flow rate results in faster recovery of the SC switch. The recovery

time in a SC N2 switch is predicted to be about 1.5 ms after the energy deposition. The

72 5. THEORETICAL MODELING OF DISCHARGE AND RECOVERY IN SCFS

0 20 40 60 80 1000

1

2

3

4

5

6

7

8

9

Flow rate at STP [m3/h]

Estim

ated

reco

very

tim

e [m

s]

Figure 5.2 – Estimated recovery time of a SC N2 switch after the energy deposition of 0.7 J. Gap

width 0.4 mm, flow rate at STP 8−98 m3/h, corresponding to 0.05−0.675 m3/h at working

pressure of 150 bar (flow velocity equals to 0.4−6 m/s at 0.4 mm gap width).

discontinuity of the curve at 55 m3/h STP volume flow corresponds to the critical Reynolds

number Re (part of the Nusselt number Nu that appears in equation (5.7)) transition from

laminar to turbulent flow [200]. The recovery time in an air plasma switch with the same

amount of energy deposition and flushing volume velocity at STP was also calculated by

this simple model (later in chapter 6.3.1). The simulation results reveals that the recovery

time inside SC N2 of 150 bar is about 5 times shorter than that in a 2.5 bar air switch.

This simple model provides important design data for our SC switches. However, the

model is too simple to produce accurate data on the recovery process. Therefore the calcu-

lated recovery time is an order of magnitude estimate, which for example can be seen from

a comparison with the measured data given later in chapter 6.3.1. Hence we have to develop

an extended physical model for the discharge and recovery in SCFs.

5.3 Electric field across the gap

For the extended physical modeling which will be described later in section 5.4, the electric

field E across the gap during the discharge of SC N2 is an important input parameter. From

the measured current i(t) through the gap, we can calculate the time evolution of E by using

the simplified discharge circuit of the switch [201]. The simplified discharge circuit (marked

with dotted box in figure 3.10) is given in figure 5.3.

In the simplified circuit, the SC switch and the spark channel generated in the gap is

replaced by the series connection of an inductance La and a resistance Ra. The electric field

5.3. ELECTRIC FIELD ACROSS THE GAP 73

Figure 5.3 – Simplified circuit of the dotted box in figure 3.10. i(t): measured current in the cir-

cuit; Vb: measured breakdown voltage; La: arc inductance; Ra: arc resistance; Ch: high voltage

capacitance; Ls: stray inductance in the circuit; R0: total resistance in the circuit (including stray

resistance and load resistance).

across the switching gap can be calculated with the following formulas:

Ra(t) = 1i(t)

×{

Vb − 1Ch

∫ t0 i(t)dt− [Ls+La(t)] di(t)

dt −[R0+

dLa(t)dt

]i(t)

} ; (5.10)

E(t) =1

d

[i(t) ·Ra(t)+La(t)

di(t)

dt

]. (5.11)

In the equations above the variables are explained here:

− Ra(t): the resistance of the arc generated in the gap of SC switch;

− i(t): measured current through the gap, with a typical waveform shown in figure 3.11;

− Vb: the measured breakdown voltage of the SC switch;

− Ls: the stray inductance in the circuit. SC switch (B) in this case can be seen as a

set of coaxial cables with different diameters of the inner conductors, outer metal shield,

and insulators. So the value of Ls can be taken as the equivalent inductance of the co-axial

cables in series. The value of Ls is calculated to be Ls = 104 nH.

− R0: the total resistance of the circuit, which consists of the input impedance of the

4-stage TLT: RTLT = 12.5 Ω, the resistance of the electrode heads (W/Cu 75/25) Rcopper, the

resistance of the electrode bodies (stainless steel) Rss1, and the resistance of the stainless

steel plate denoted as ’6’ in figure 3.7 Rss2. The resistance of the grounded return path

(aluminum housing) of the switch is negligible, because the surface area is very large. Hence

the total resistance of the circuit can be calculated as R0 = RTLT+Rcopper+Rss1+Rss2.

− La: the arc inductance which can be calculated from equation [202, 203]:

La = lμ0

2πln

rc

rs(t), (5.12)

in which rc is the radius of the return path of the current to ground, rs = 35 μm is the radius

of the discharge channel generated in the gap. The value of rs is estimated by imaging with

an intensified CCD camera, as described in section 4.5. La(t) is found to be much smaller

than the value of Ls.

74 5. THEORETICAL MODELING OF DISCHARGE AND RECOVERY IN SCFS

0 100 200 300 400 500−1

0

1

2

3

4

5

6

7

8 x 107

Time [ns]

Elec

tric

field

[V/m

](a)

0 100 200 300 400 500−1

0

1

2

3

4

5

6

7

8 x 107

Time [ns]

Elec

tric

field

[V/m

]

(b)

Figure 5.4 – (a): Estimated average electric field E from the measured arc current i(t) in figure

3.11, with applied voltage of 25 kV and gap width of 0.3 mm; (b): Smoothed electric field E in

(a) with a span of 10 %.

With the current given in figure 3.11, the calculated electric field E across the gap up

to 500 ns after the start of the current is shown in figure 5.4(a). The oscillation in the tail

of the curve is due to the resonance oscillation between the inductance and capacitance in

the circuit. We use the smoothed curve of the calculated E with moving average of 10 % of

the total number of data points, shown in figure 5.4(b), as the electric field profile that will

be applied as the input parameter in the extended physical model for discharge in SCFs in

chapter 5.

5.4 Extended physical model for discharge in SCFs

5.4.1 General model description

The goal of this model is to study the complete breakdown and subsequent recovery pro-

cesses in SC N2. The physical model is of SC switch (B), which has been introduced in

chapter 3. If the switch undergoes a breakdown, the discharge is assumed to occur in the re-

gion (6) in figure 3.8, i.e., in the region of a rather uniform background field. We use results

of previous work in streamer propagation as input parameters, and simulate the streamer-to-

5.4. EXTENDED PHYSICAL MODEL FOR DISCHARGE IN SCFS 75

spark transition phase and discharge and post-discharge phase of the discharge. The rough

time scale for physics during these processes and the estimated temperature of neutral N2 is

given in figure 5.5.

Conservation of mass, momentum, total energy ns

μs

0

Time defined in the model

300 K 5000 K Temperature on axis 20000 K

Streamer stage

Streamer-spark transition stage

Spark-decay stage

Figure 5.5 – Stages in our extended physical model and the estimated temperature on the axis of

the spark channel in SC N2.

The modeled discharge phases in our work are briefly introduced here, while the detailed

explanation is given in section 5.4.3-5.4.4. In the streamer-to-spark transition phase the

streamer forms and propagates, and electric energy from the external source is deposited

into the gap. The discharge energy is transferred to different levels: translational motion,

rotational levels, vibrational levels, and electronically excited levels as well as dissociation

and ionization of N2 molecules. Energy in some excited levels is relaxed to gas heating

instantaneously, while the energy in the other excited levels takes time to relax fully. All

energy going into gas heating is denoted as Qin. During the relaxation process there is

energy output due to heat conduction and radiation, denoted as Qout. The total energy ε is a

result of the energy input, energy output and the gas dynamics.

We assume the streamer-to-spark transition phase ends when the gas temperature in the

discharge center is larger than 5000 K, then the discharge and post-discharge phase begins.

In this stage the remaining energy in excited levels continues relaxing with a certain time

constant; the total energy of the spark channel changes under combined mechanisms; the

thermodynamic properties of the N2 in the spark channel recover and finally the dielectric

strength of SC N2 can recover. During the discharge and post-discharge phase, the forced

flushing of the N2 might push the spark channel to the outer-edge of the inter-electrode gap,

where turbulent flow cools down the spark channel more fast. For the simplicity, we neglect

this effect during our simulation.

76 5. THEORETICAL MODELING OF DISCHARGE AND RECOVERY IN SCFS

Stor

ed in

ele

ctro

nic

leve

ls

+ sp

ent o

n io

niza

tion

Pres

umed

ele

ctric

fiel

d

Elec

tric

cond

uctiv

ity

Kin

etic

mod

elin

g

Elec

tric

ener

gy

Neg

lect

Stor

ed in

vib

ratio

n le

vel

Goe

s to

gas k

inet

ics

ion

Qq

σe

ee

iμsm

all V

ibra

tiona

l ene

rgy

VεR

elax

ed to

gas

ki

netic

s

recomb

ion

eF

F/dt

dn

out

QG

as d

ynam

ics

Ener

gy ε

E

Goe

s to

exci

ted

leve

l +

spen

t on

ioni

zatio

n

Rel

axed

to g

as k

inet

ics

Imm

edia

tely

rela

xed

Via

VT

Ener

gy lo

ss

Elec

troni

c ex

cite

d +

ioni

zatio

n en

ergy

Rel

axed

to g

as

kine

tics

Via

2e

eR

QQ

RtransQ

ηR

ion

Vele

rot

Q)

ηη

η(η

Rele

rot

Q)

η3.0(η

Rion

ele

Q)

η(0.7η

ET

VT

Q

ET

Q

RVQ

η

Ener

gy in

put

inQ

Goe

s to

gas

heat

ing

TQ

p·dV

Figu

re5.

6–

Flo

wch

art

of

the

ener

gy

tran

siti

on

inth

en

um

eric

alm

od

elo

fd

isch

arg

ean

dre

cover

yp

roce

ssin

sid

ea

SC

F.

E:

elec

tric

fiel

d

esti

mat

edfr

om

equ

atio

n(5

.11

);n

e:

nu

mb

erd

ensi

tyo

fel

ectr

on

s;F

ion

and

Fre

com

b:

the

ion

izat

ion

and

reco

mb

inat

ion

coef

fici

ents

of

N2;

QR

:th

eel

ectr

icp

ow

erd

ensi

ty;

Qe

and

Qio

n:

elec

tro

nan

dio

nco

mp

on

ent

of

the

dis

char

ge

pow

erin

pu

td

ensi

ty;

σ e:

elec

tric

alco

nd

uct

ivit

y

of

the

elec

tro

ns;

μ e:

elec

tro

nm

ob

ilit

y;

qe:

elec

tro

nch

arg

e;η t

rans,

η rot,

η V,

η ele

,an

dη i

on:

frac

tio

ns

of

ener

gy

that

go

into

tran

slat

ion

al

level

,ro

tati

on

alle

vel

,v

ibra

tio

nal

level

,el

ectr

on

icex

cite

dle

vel

,an

dio

niz

atio

no

fN

2;

QT

:el

ectr

icp

ow

erd

ensi

tyg

oin

gd

irec

tly

into

the

gas

hea

tin

g;

QV

T:

the

pow

erd

ensi

tyre

laxed

fro

mv

ibra

tio

nal

totr

ansl

atio

nen

erg

yle

vel

of

N2;

QE

T:

the

pow

erd

ensi

tyre

laxed

fro

m

elec

tro

nic

ally

exci

ted

level

sas

wel

las

fro

md

isso

ciat

ion

and

ion

izat

ion

of

N2

mo

lecu

les;

τ VT

and

τ ET

:ti

me

scal

eso

fth

ev

ibra

tio

nal

rela

xat

ion

and

the

elec

tro

nic

ally

rela

xat

ion

inN

2;

Qin

and

Qout:

the

loca

lp

ow

erin

pu

tan

do

utp

ut

den

sity

;ε:

the

tota

len

erg

yd

ensi

ty;

ε V:

the

vib

rati

on

alen

erg

yd

ensi

ty;

ε E:

the

sum

of

the

elec

tro

nic

exci

ted

ener

gy

and

ener

gy

spen

to

nio

niz

atio

no

fN

2;

p·d

V:

gas

dy

nam

ics

con

trib

uti

on

toth

eto

tal

ener

gy

den

sity

.

5.4. EXTENDED PHYSICAL MODEL FOR DISCHARGE IN SCFS 77

The numerical modeling of the discharge process follows the flow chart of the energy

transition shown in figure 5.6. From the detailed streamer simulations [204–206], it is

known that in the interior of streamer channel the electron density can be assumed to be

uniform in the axial direction far from the electrodes. Since we do not take into account

the effect of the electrodes, we assume a 1D configuration (in the radial direction) to be

sufficient for the present work.

5.4.2 Model Formulation

The Euler equations [30, 207, 208] which cover the equations of conservation of mass, mo-

mentum, and energy are applied in the model. The balance equations of the vibrational

energy and electronic excited energy of N2 are included in the following set of equations:

∂∂ t

⎡⎢⎢⎢⎢⎣

ρρu

εεV

εE

⎤⎥⎥⎥⎥⎦+

1

r

∂∂ r

r

⎡⎢⎢⎢⎢⎣

ρu

ρu2

u(ε +p)

εVu

εEu

⎤⎥⎥⎥⎥⎦+

∂∂ r

⎡⎢⎢⎢⎢⎣

0

p

0

0

0

⎤⎥⎥⎥⎥⎦ =

⎡⎢⎢⎢⎢⎣

0

0

Qin −Qout

ηVQR −QVT

ηEQR −QET

⎤⎥⎥⎥⎥⎦ , (5.13)

where ρ [kg ·m−3] is the mass density, u [m ·s−1] the velocity, p [Pa] the pressure, ε [J ·m−3]the total energy density, εV [J ·m−3] the vibrational energy density, εE [J ·m−3] the electronic-

ally excited energy density, Qin [J ·s−1 ·m−3] the local power input density, Qout [J ·s−1 ·m−3]the local power output density, QR [J · s−1 ·m−3] the external discharge power input density,

QVT [J · s−1 ·m−3] the power density relaxed from vibrational to translational energy level

of N2, and QET [J · s−1 ·m−3] the power density relaxed from electronically excited levels

as well as dissociation and ionization of N2 molecules, ηV the fraction of the energy which

goes into vibrational excited level, ηE the energy used for ionization together with the part

of electronic excited energy which will not be relaxed immediately. The detailed derivation

for the Euler equations in cylindrical coordinate can be found in appendix A4. All the units

listed in this work are SI unit, unless otherwise specified, and the terms and units in the

equations below will not be repeatedly described.

The total energy per unit volume ε is defined as ε = ρu2/2+p/(γ −1), where γ is the

specific heat ratio depending on gas temperature and pressure [209]. The input power dens-

ity Qin is expressed as

Qin = QT+QVT+QET , (5.14)

where QT is the electric power density going directly into the gas heating; QVT and QET

have been introduced before. The output power density Qout is described by

Qout = Qrad+Qcond+Qelectrode . (5.15)

where Qrad is the output power density due to radiation heat transfer, Qcond the output due

to heat conduction in the radial direction of the spark channel, and Qelectrode the output due

78 5. THEORETICAL MODELING OF DISCHARGE AND RECOVERY IN SCFS

to heat conduction to the metal electrodes. Energy dissipation due to heat convection is

neglected, since the temperature in the outer domain of the spark channel is almost equal to

the background temperature.

5.4.3 Streamer-to-spark transition phase

The critical electric field that can initiate a breakdown in N2 is normally Eb = 20N/N0 kV·cm−1 [210], in which N0 is the density under standard temperature and pressure (STP) and

N is the density at working pressure. At voltage below Eb, streamer model is able to explain

the breakdown mechanism, while at electric fields much higher than Eb, runaway electrons

from the main avalanche lead to a broad channel breakdown [211]. Since the electric field

applied in this work (seen figure 5.4) is lower than Eb, the streamer mechanism is applicable

in our model. Streamer properties like radius, maximum field on tip, propagation velocity,

electron density distribution etc., are very well studied [204, 212–214]. Results of previous

work [215, 216] in streamer propagation are taken as input parameters for our modeling.

In [217, 218] scaling (or similarity) laws have been derived. We use these laws to obtain

streamer properties in SC N2 by scaling of literature values at STP. However, as corrections

to scaling law at pressure substantially above one bar have been suggested in [213], and

as the radius of the discharge channel briefly after the streamer phase has been measured

to be 35 μm in chapter 4.5, we use 35 μm as the initial radius applied in our model. The

streamer develops into a conducting channel and electric energy from the external source,

with power density denoted as QR, deposits into the channel. When the N2 temperature

in the channel heats up to Tg = 5000 K [30, 34], we move to the next modeling domain:

discharge & post-discharge phase.

QR is composed of the ion and electron contributions, denoted as Qion and Qe respect-

ively. The ion component of the energy is neglected, as for the time scales considered in

the present work ion mobility is negligible compared to the electron mobility. So the elec-

tric energy input is considered to be equal to the electron component of the electric energy

QR = Qe. After the streamer bridges the gap, the electric field E is assumed as uniform in

the gap [219]. For a given E, the electron energy deposition rate can be calculated with

the equation Qe = σeE2 = qeμeneE2 , where σe is the electrical conductivity due to electron

mobility; qe, μe and ne are the electron charge, mobility, and number density of electrons,

respectively.

The electron mobility μe is dependent on the reduced electric field E/nN2and was ob-

tained from [220]. The balance of the electron density ne can be analyzed through the

kinetic processes governing the species reactions such as direct ionization, step-wise and

associative ionization, attachment, detachment, etc.. In present work we consider only ion-

ization and recombination mechanisms. We write the kinetic equation in the following form

dne(r)

dt= nN2

(r)ne(r)Fion(r)−ne(r)n+(r)Frec(r) , (5.16)

where Fion(r) [m3 · s−1] and Frec(r) [m6 · s−1] are the ionization and recombination coeffi-

5.4. EXTENDED PHYSICAL MODEL FOR DISCHARGE IN SCFS 79

cients of N2, obtained from [220, 221]. In appendix A5 we use a zero-dimensional model

to analyze detailed temporal dynamics of species in a streamer channel. The results reveal

that during the discharge N2+ is converting very rapidly to N4

+, and the dominant electron

loss mechanism in the streamer channel is electron-ion dissociative recombination between

N4+ and electrons [222]. In equation (5.16) the drift and diffusion of the electrons and ions

are justified to be neglected in the nanosecond time range in our situation. 1

As described before, part of the discharge power density QR is transferred into the ex-

cited levels and needs time to relax. Figure 5.7 gives the fractions of energy that go into

translational level ηtrans, rotational level ηrot, vibrational level ηV, electronic excited level

ηele, and ionization of N2 ηion, as a function of the reduced electric field E/nN2obtained

from BOLSIG+ [225]. From the figure we can see that at E/nN2< 300 Td, sum of energy

fractions equals 100 %, while above 300 Td the sum is less than 100 %. This is probably

because the difference between calculated electron transport coefficients in N2 and the ex-

perimental results increases at higher E/nN2[226]. In the range of electric field concerned

in our model (less than 100 Td), the sum of energy fractions equals 100 %, indicating that

all the energy has been taken into account. Flitti and Pancheshnyi [227] reported insignific-

ant sensitivity of the energy fractions to pressure changes, so figure 5.7 is considered to be

applicable for the SCF situation.

The fraction of energy expanded on translational level ηtrans and rotational level ηrot can

be considered to equilibrate instantaneously [30, 32, 34, 228]. In a large range of reduced

electric fields E/nN2= 60−300 Td, about 30 % of the energy distributed in the excitation

of electronic levels with fraction ηele is directly transferred to gas heating [32,34,228,229].

The main source of N atoms is via the routes of electronic excitation and subsequent dis-

sociation [229, 230]. This implies that the fraction ηele already contains the electron in-

duced production of atoms (dissociation). 30 % is directly converted to heat (heat release

in dissociative de-excitation), 70 % is delayed (heat release in de-excitation and atom re-

combination). The fraction of the energy which goes into vibrational excited level ηV also

needs time to be relaxed to gas heating. This process is known as a vibrational relaxation

with time constant τVT. Depending on the applied reduced electric field E/nN2, a small

fraction ηion of energy is expanded on the ionization of N2 molecules. This fraction is

found to be ηion ≤ 2.5 % for a value of value of E/nN2≤ 200 Td. The energy expanded

for ionization together with the rest 70 % of the electronic excited energy, which sum we

denote by ηE = ηion+0.7ηele, takes time to be relaxed to the gas heating, which is a com-

1We mention here a discussion with a referee about the assumption that the electron density is uniform along

the streamer channel after the streamer bridges the gap. The referee referred to reference [223], stating that the

electrons would be rapidly lost due to recombination at high pressure. The motivation of [223] that streamers

would not obey scaling relations with pressure [224], can be resolved by taking the scaling of streamer lengths

with pressure into account. The results in [223] reveal that the degree of ionization increases linearly with gas

density, and so does the ratio of molecules that are excited, ionized or dissociated by electron impact. Recombin-

ation rates of electrons and molecules will certainly change when many molecules are vibrating or electronically

excited. Furthermore in [223] it is implicitly assumed that the gas stays weakly ionized, whereas according to our

simulations the gas is highly ionized (40 %), therefore the ground state recombination rates suggested in [223] do

not apply. In the present work we have chosen the simplified 1D approximation and refer to possible future work

for a 2 dimensional model.

80 5. THEORETICAL MODELING OF DISCHARGE AND RECOVERY IN SCFS

2

Figure 5.7 – Energy fractions for discharge in N2 as function of reduced electric field E/nN2at

ambaint pressure. ηtrans: fractions of energy that goes into translational level, ηrot: rotational

level, ηV: vibrational level, ηele: electronic excited level, and ηion: ionization of N2.

plicated process [229]. For the sake of simplicity we don’t track the detailed processes such

as dissociative ionization, dissociative recombination, atomic recombination, etc.. Instead

we assume that this part of energy will be relaxed into gas heating with an assumed time

constant τET.

In summary: the discharge energy that goes directly into gas heating can be expressed

as equation

QT = ηTQR, (5.17)

with the fraction of energy contributing directly to the gas heating ηT written as

ηT = ηtrans+ηrot+0.3ηele . (5.18)

The discharge energy that relaxes from vibrational level to gas heating is expressed with

equation

QVT =εV − εV,eq(Tg)

τVT, (5.19)

in which εV,eq(Tg) [J·m−3] is the equilibrium value of εV at temperature TV = Tg given by

the following expression [231]

εV,eq(Tg) = nN2· EV

eEV/kB·Tg −1, (5.20)

5.4. EXTENDED PHYSICAL MODEL FOR DISCHARGE IN SCFS 81

and the time scales of the vibrational relaxation τVT in N2 can be written as [232, 233]

τVT = (pg/105)−1 ·3.4×10−12e195×T−1/3g . (5.21)

In the equations above EV is the vibrational energy of one N2 molecule and equals to

0.29 eV; kB is Boltzmann’s constant, kB = 1.38×1023 J ·K−1; pg is the gas pressure [Pa].

The discharge energy that relaxes from electronic excited level as well as releases by re-

combination mechanisms is expressed by equation

QET = εE/τET (5.22)

in which εE =∫ t

0 ηE(τ )QRdτ is the integrated energy with fraction ηE over the simulation

time τ . [221] reported the relaxation of electronic-excited N2 within 20 μs in air discharge

under ambient pressure, and the relaxation time tends to be smaller in higher density gas

[234]. Since the modeling results is found to be insensitive to the precise value of τET, we

assume the relaxation time to be τET = 20 μs.

Around the axis of the spark channel, the heat transfer is dominated by radiation [235].

We split the channel into infinitively thin annular zones with thickness of δ r, which volume

calculated to be V = πδ r2 ·d. The selection of δ r will be described later in section 5.4.5.

The heat transfer by radiation can be expressed by

Qrad = ξ ·σ (T4g −T4

N2) ·SV

, (5.23)

where ξ is the net emission factor dependent on the gas temperature and pressure in the dis-

charge zone, σ = 5.671×10−8 W ·m−2K−4 Stefan-Boltzmann constant, TN2 = 300 K the

environmental temperature, S = 2πr ·d the radiation surface area. The expression of ξ is

taken from [235] and reads

ξ = 1− e−(C·p1.2g r0.5)/Tg , (5.24)

where C is a constant C = 4.2×10−3 Pa−1.2m−0.5K. This expression of ξ is valid for SF6,

but since we assume the spark channel reaches local thermal equilibrium soon (details seen

in section 5.4.4), the difference of ξ for SF6 and N2 is considered to be not significant.

Due to the faster temperature rise in the inner discharge channel, there is a temperature

gradient in the radial direction. Energy is transferred by heat conduction from the high

temperature to low temperature gas by expression

Qcond =−k · ∂Tg

∂ r

2πrd

π (r2j+1 − r2

j )d, (5.25)

where k [W·m−1·K−1] represents the thermal conductivity of the N2; rj and rj+1 are inner

and outer radius of the annular zones, with relation rj+1 = rj+δ r. In this stage the thermody-

namic parameters of the SCF below 2000 K are calculated precisely with [209], while above

82 5. THEORETICAL MODELING OF DISCHARGE AND RECOVERY IN SCFS

this temperature no existing references can be found. However, from [236] we can find that

for temperatures above 2000 K, the thermal conductivity of the gas is almost independent of

the gas pressure, i.e., k keeps almost constant with increasing pg. So for temperature higher

than 2000 K, k is calculated from the equation in air [196] and assumed to be applicable for

the SC N2 situation. Hence the thermal conductivity k of N2 can be expressed by equation

k = 14.88σTg+2.2×108ρdA0

dTg+0.01(1−A1)

√Tg , with Tg ≥ 2000K;

(5.26a)

k = k0(Tg)+kr(τ,δ )+kc(τ,δ ) , with Tg < 2000K,(5.26b)

where σ = 5.671×10−8 W ·m−2K−4 is Stefan-Boltzmann constant; the detailed descrip-

tion of dimensionless numbers A0, A1 as well as the sub terms of thermal conductivity

k0(Tg), kr(τ,δ ), kc(τ,δ ) can be found in [196, 209].

Energy loss to the metal electrodes (part 1, 2, and 5 in figure 3.8) by heat conduction

is considered in our model. Since the system is axially symmetric, we calculate the heat

transfer to the anode side and multiply the results by 2 to get the value of heat transfer to

electrodes Qelectrode. The equation is formulated as

Qelectrode =2(Tg −T∞)

Rheat· 1

π (r2j+1 − r2

j )d, (5.27)

in which T∞ = 300 K is the electrode temperature on the far distance surface; Rheat [m2W−1]

is the total thermal resistance of the spark channel, the electrode head (part 2 in figure 3.8),

and the electrode body (part 1 in figure 3.8). The equation of Rheat can be written as

Rheat =

(1/4d

k+

L1

k1+

L2

k2

)· 1

π (r2j+1 − r2

j ), (5.28)

in which the characteristic lengths of the thermal resisting layers are respectively 1/4d for

the high temperature spark, L1 = 10 mm for the electrode head, and L2 = 126 mm for the

electrode body; the thermal conductivity of the layers are respectively k obtained from

equation (5.26) for the high temperature medium, k1 = 189 [W ·m−1 ·K−1] for the electrode

head, and k2 = 21 [W ·m−1 ·K−1] for the electrode body.

5.4.4 Discharge and post-discharge phase

In discharge and post-discharge stage the spark channel expands due to the pressure rise

and shock waves formation under the combined changes of the kinetic and heat energy.

The total energy of the spark channel decreases and the channel cools down. The dielec-

tric characteristics of the gas are restored and finally the thermal recovery of the gap will

complete.

5.4. EXTENDED PHYSICAL MODEL FOR DISCHARGE IN SCFS 83

Many works have discussed the modeling of the spark discharge in this stage based on

different mechanisms. Taylor [237] and Lin [238] modeled the strong shock wave gener-

ated with an infinitely small initial radius. The similarity assumptions of an expanding blast

wave of a constant total energy are applied and the heat transfer term is ignored. Authors

used Rankine-Hugoniot relations to calculate the parameter profiles versus time and radius.

Plooster [196] estimated the blast wave from line sources, in which the conservation of mo-

mentum, mass and internal energy are applied. For the energy conservation, heat exchange

between the blast wave and the environment is neglected. Akram [39, 239] developed the

hydrodynamic equations by adding heat transfer terms and correcting the momentum equa-

tion in Plooster’s work. In both Plooster and Akram’s work artificial viscosity from von

Neumann-Richtmyer [240] is implemented in the models in order to solve the discontinuity

problem in the shock region.

In our model since the profile of the parameters is already known from the results of

the previous stages, the artificial viscosity term is not needed in the modeling. Comparing

to the models of Plooster and Akram, the equation of conservation of energy in this model

has additional terms of energy relaxation from excited levels to the neutral gas heating. Fol-

lowing the assumptions made by Akram, we assume that a local thermal equilibrium (LTE)

exists all the time; the discharge column is straight and cylindrical symmetric; the conduc-

tion portion of the plasma column is electrically neutral; the interaction of the discharge

current and own magnetic field as well as the body forces in short gaps are negligible.

The hydrodynamic equations in this stage can be expressed again by the formula (5.13).

The electric power input QR with the same expression as previous section is assumed to

exclusively contribute to the gas heating, i.e. QT = QR. The fraction of energy transferred

into vibrational excited and electronic excited levels in formula (5.13) is now set to be

ηVQR = ηEQR = 0. Energy previously stored in the excited levels continues to be relaxed

into gas heating by the terms QVT and QET, with time constant τVT and τET respectively, as

given in equations (5.19-5.22). The heat radiation Qrad, heat conduction in N2 Qcond, and

heat conduction to electrodes Qelectrode can again be expressed by equations (5.23-5.28).

Thermal dissociation and ionization of N2 molecules become significant under high gas

temperature. However, in our modeling the high temperature zone vanishes with a time

scale much shorter than the establishing time of dissociation and ionization equilibrium, as

can be seen from the information given in appendix A6. Hence we neglect the impact of

thermal dissociation and ionization in our modeling. Detailed discussion will be given in

section 5.4.6.

5.4.5 Numerical conditions

The initial values of the input parameters are adapted from streamer modeling results men-

tioned in section 5.4.3. Table 5.2 gives the initial parameters at STP as well as the corres-

ponding scaling properties. The initial parameters at the working pressure in this paper:

80.9 bar, are calculated from the values given in table 5.2. We assume in the radial direction

84 5. THEORETICAL MODELING OF DISCHARGE AND RECOVERY IN SCFS

the initial electron density ne(r, t) has a Gaussian shape

ne(r,0) = ne,0 · e−r2/r2s,0 , (5.29)

where rs,0 and ne,0 are the initial channel radius and the maximum electron density on the

axis of the channel. Initial N2 density, velocity and pressure are assumed to be constant

from table 5.2. The set of equations (5.13) is discretized using a second-order Lax-Wendroff

numerical scheme [241], with the numerical parameters presented in table 5.3.

Table 5.2 – The initial parameters for the model.

Parameter Symbol Value at ground pressure Scaling property

Electron mobility μe,0 ∼ 4.4×10−2 m 2V−1· s−1 ∝ (N/N0)−1

Initial gas temperature TN2300 K ∝ (N/N0)0

Initial vibrational temperature TV,0 300 K ∝ (N/N0)0

Quantum of vibrational energy EV 0.29 eV ∝ (N/N0)0

Applied voltage V 30 kV ∝ (N/N0)0

Gap distance d 24.3 mm ∝ (N/N0)−1

Initial gas density nN2,0 2.4×1025 m−3 ∝ (N/N0)1

Initial electron density ne,0 8.87×1020 m−3 [242] ∝ (N/N0)2

Initial channel radius rs,0 100 μm [213] ∝ (N/N0)−1

Table 5.3 – Numerical settings of the modeling. a is the sound velocity inside SCF.

Parameter Symbol Value

Initial domain size Lr,0 10× rs,0

Initial space step δ r0 rs,0/100

Space step δ r ∝ 1/ρDomain size Lr ∑δ r

Time step δ t 0.01×min(δ r/a,τVT)

5.4.6 Results and discussions

5.4.6.1 General results

The modeling results based on the initial parameters defined in section 5.4.5 are given as

below. Figure 5.8 gives the results of neutral N2 temperature Tg and vibrational temperature

TV on the axis of the spark channel in the early stage of the discharge. The phenomenon that

TV increases faster than Tg is due to the larger fraction of energy stored in the vibrational

level than in the translational level. At a time of 1.5 ns, Tg heats up to 5000 K, while TV

has a value of about 18000 K. The time needed for Tg heating up to 5000 K decreases with

5.4. EXTENDED PHYSICAL MODEL FOR DISCHARGE IN SCFS 85

increasing reduced electric field, and for the same value of reduced electric field, higher E

and p result in shorter formation time. Following the Toepler’s spark law [243], the time

dependent resistance of the spark channel can be calculated with equation

RF(t) =kTd∫ t

0 i(τ )dτ, (5.30)

in which i(t) is the measured current across the gap, RF(t) [Ω] the resistance of the spark

channel at time point t, kT the empirical spark constant, and d the gap length. The spark is

assumed to be formed when RF(t) ≤ 100 Ω, which moment we denote as the spark forma-

tion time. Figure 5.9 gives the calculated spark formation time as function of the reduced

electric field E/p, as well as the time needed for gas temperature building to Tg ≥ 5000 K

according to our simulation results. The time needed for Tg ≥ 5000 K in our model matches

well with the spark formation time calculated from Toepler’s law, while disparity appears

when ≤ 0.1 mm, and with smaller gap width, this disparity becomes more significant.

Simultaneously with the temperature rise, the N2 pressure pg also increases in the dis-

charge channel. Figure 5.10 gives the ratio of the pressure on the axis of the discharge

to the background pressure paxis/pback. From equation (5.21) we can see that the value of

vibrational energy relaxation time τVT decreases with increasing Tg and pg. With smaller

τVT, the energy relaxes faster from vibrational level to gas heating. From figure 5.8 it is

clear that immediately after the spark is formed, TV starts to decrease while Tg increases

more dramatically, and they merge with each other at ∼ 1.6 ns, TV = Tg = 13000 K. LTE

status is assumed to be achieved at this moment. Since this time is almost the same as the

time needed for Tg ≥ 5000 K, the assumption of LTE during the modeling of discharge and

post-discharge stage is fairly accurate.

0 2 4 6 8 10 12 14 16 18x 10−10

0

2000

4000

6000

8000

10000

12000

14000

16000

18000

20000

Time [s]

Tem

pera

ture

[K]

TgTvib

Tg=5000 K

Figure 5.8 – Gas temperature and vibrational temperature on the spark axis in the streamer-to-

spark transition stage. Initial parameters given in section 5.4.5.

Figure 5.11 gives the radial distributions of the N2 temperature Tg, the neutral partial ve-

locity u, the N2 density ρg, and the ratio of N2 pressure to the background pressure pg/pback,

86 5. THEORETICAL MODELING OF DISCHARGE AND RECOVERY IN SCFS

0 5 10 15 20 25 30 35 400

0.5

1

1.5

2

2.5

3

3.5

4

4.5

E/p [kV/(cmbar)]

Spar

k fo

rmat

ion

time

[ns]

Toeplerʼs spark law0.2 mm, 80 bar0.13 mm, 80 bar0.1 mm, 100 bar0.07 mm, 150 bar0.15 mm, 60 bar

Figure 5.9 – Streamer-to-spark transition time calculated by Toepler’s law [243] and modeling

results with different pd settings.

0 0.5 1 1.5 20

10

20

30

40

50

Time [ns]

Pres

sure

ratio

Pax

is/Pba

ck

Figure 5.10 – N2 pressure increase on the axis of the spark channel. Paxis: N2 pressure on the

axis; Pback = 80.9 bar: background N2 pressure.

at various time instants after the streamer bridges the gap, denoted as td. It can be seen that

Tg in the discharge channel heats up to 21000 K at td = 3 ns, while the ρg in the channel

does not show a significant change. The pressure pg in the channel builds up rapidly due to

the unchanged ρg and increased Tg.

Later on the temperature curve becomes broader and flatter. In the meanwhile the N2

moves outer-wards with increasing peak velocity u which becomes supersonic at a time

of 49 ns. Shock waves form after the extinction of the electric energy input, i.e. after

td = 220 ns. The distribution of the gas density ρg changes so that ρg in the center of the

channel becomes smaller, while high density exists in the shock region. The pressure at

the shock boundary is an order of magnitudes higher than that of the background pressure.

From about 10 μs onward, Tg in the whole discharge channel is below 1500 K, the Tg decay

versus time becomes slower. This is because the gas does not transport much energy by heat

5.4. EXTENDED PHYSICAL MODEL FOR DISCHARGE IN SCFS 87

10−7 10−6 10−5 10−4 10−3 10−2 10−1 100102

103

104

105

Radius [m]

Tem

pera

ture

[K]

10−7 10−6 10−5 10−4 10−3 10−2 10−1 1000

200

400

600

Radius [m]

Velo

city

[m/s

]

49 ns220 ns

1 μs

10 μs50 μs

100 μs

3 ns

3 ns

1 μs220 ns

49 ns

10 μs

50 μs 100 μs

10−7 10−6 10−5 10−4 10−3 10−2 10−1 1000

50

100

150

200

250

Radius [m]

Den

sity

[kg/

m3 ]

10−7 10−6 10−5 10−4 10−3 10−2 10−1 100

100

101

102

Radius [m]

Pres

sure

ratio

Pg/P

back

220 ns

1 μs 10 μs50 μs

100 μs3 ns

3 ns 49 ns

220 ns 1 μs

10 μs50 μs 100 μs

49 ns

Figure 5.11 – Parameters of the N2 temperature Tg, velocity u, density ρg, and pressure ratio

to the background pressure Pg/Pback, in the radial coordinate of the spark channel at different

moment after the streamer bridges the switch gap.

conduction, due to the flatter temperature profile and smaller thermal conductivity. The

shock wave propagates further during this time region. The gas density ρg in the channel

recovers to the background density. The peak values of velocity u, the gas density ρg,

and pressure pg propagate together with the shock wave and decrease with time. From

88 5. THEORETICAL MODELING OF DISCHARGE AND RECOVERY IN SCFS

td ≈ 20 μs onward, the temperature decay becomes very slow. The peak temperature in the

channel is about 800 K at td = 50 μs. From microsecond time range on the temperature on

the axis of the discharge is lower than the temperature further from the axis. This might be

due to the implementation of the net emission coefficient in equation (5.24) in the annular

zones inside the channel. From 50 μs onward, the temperature on the axis of the spark

channel is higher again than the temperature on the outer region of the spark channel. This

is probably due to the fact that after 50 μs the system is equilibrated, and strong gradient

effects like the nonmonotonic temperature profile disappear.

The distance of the shock wave is several centimeter away from the discharge axis.

Compared to the observed millimeter shock region in experimental work with 60 kV in a

50 mm gap under atmospheric pressure [244], the propagation of the shock front in our

work is further from the axis. One of the important reasons is explained here. The exper-

iment in a N2 discharge [245] shows that from tens of microsecond after the spark forms,

the spark channel becomes a turbulent mix of excited and cold, recirculating gases. The

hydrodynamic instability of the gas due to the turbulent mixing would cause the compres-

sion of the spark channel [246], while in our simulation the turbulent mixing is missing.

Besides, with turbulent mixing the intensity of the channel cooling process will increase

more sharply than only taking into account heat transfer [246]. Since in our model the tem-

perature decrease is already convincingly fast in the first 20 μs after the discharge, we do

not take the turbulence energy transport into account. We should be aware that the recovery

process of the SC N2 would be faster than the results shown by this model.

10−10 10−9 10−8 10−7 10−6 10−5 10−4 10−310−8

10−7

10−6

10−5

10−4

10−3

10−2

10−1

100

Time [s]

Rad

ius

[m]

20000 K

10000 K5000 K

2000 K1000 K

500 K

1/eTaxis

Figure 5.12 – Radius of spark channel with the region defined as temperature above 1/e ·Taxis,

500 K, 1000 K, 2000 K, 5000 K, 10000 K, and 20000 K and respectively.

Figure 5.12 gives the modeling results of the high temperature region of the spark chan-

nel for Tg equals to: 1/e ·Taxis, 500 K, 1000 K, 2000 K, 5000 K, 10000 K, and 20000 K

respectively. It can be seen that the kernel of the discharge for Tg ≥ 20000 K shrinks after

5.4. EXTENDED PHYSICAL MODEL FOR DISCHARGE IN SCFS 89

40 ns, whilst the Tg = 1000 K boundary compresses after several tens of microseconds. The

characteristic time needed for establishing the thermal ionization equilibrium for N2 at a

temperature of 20000 K is in the range of about 1 μs to 6 μs, as calculated with our specific

initial electron density and the data given in [247]. For temperature of 20000 K, the fraction

of thermally dissociated N2 is about 10−5 at a time of 1 μs, as reported in [248]. Since the

time scale for establishing thermal dissociation and ionization equilibrium is much longer

than the time duration of the high temperature zone in our modeling results, it is acceptable

to exclude the two mechanisms from our model.

10−11 10−10 10−9 10−8 10−7 10−6 10−5 10−4102

103

104

105

Time [s]

Tem

pera

ture

[K]

Figure 5.13 – N2 temperature on the axis of the spark channel with pd = 24 bar ·mm,

TN2= 300 K, and d = 0.3 mm.

10−10 10−9 10−8 10−7 10−6 10−5 10−4 10−3102

103

104

Time [s]

Brea

kdow

n Vo

ltage

[V]

29 kV

Figure 5.14 – The recovery breakdown voltage of the SC N2 with pd = 24 bar ·mm,

TN2= 300 K, and d = 0.3 mm.

The N2 temperature on the axis of the spark channel Taxis is plotted as the function

of time, seen in figure 5.13. It can be seen that Taxis drops to 1000 K at 6 μs. In order

to transfer the information of temperature decay to the dielectric recovery of the SCF, the

streamer inception criterion is applied. The details of the calculations will be given in

chapter 6, while here we only give the simulated results. Figure 5.14 gives the calculated

breakdown voltage Ubr during the recovery process. The dielectric strength of the gap Ubr

90 5. THEORETICAL MODELING OF DISCHARGE AND RECOVERY IN SCFS

decreases from cold breakdown value Ucold = 29 kV to about 300 V when the discharge is

fully developed. After the extinction of the electric energy input, Ubr starts to increase again.

The value of Ubr recovers to 10 kV within 10 μs. After that the recovery of Ubr becomes

slower, and Ubr recovers to 17 kV at 200 μs. The slower rate of rise of Ubr corresponds to

the more flat temperature decay in the radial direction, and no significant increases of Ubr is

expected after 20 μs.

5.5 Conclusions

We developed two models for the simulation of discharge and recovery process in a SC

switch. A simple analytic model gives the prediction of the recovery time in a SC N2

switch to be 1.5 ms after an energy deposition of 0.7 J, at gap width of 0.4 mm and flow

rate of 98 m3/h at STP (corresponding to 0.675 m3/h at working pressure of 150 bar). The

prediction of this simple model provides important design data for the SC switches in our

work. However, due to the simplified heat transfer mechanisms and radial distribution of

parameters, the simulation results is only an order of magnitude estimate.

An extended physical model for the simulation of the discharge inside SC N2 covering

the streamer-to-spark transition and discharge & post-discharge stages is developed. The

results of the modeling show that the gas temperature in the spark channel increases from

background temperature to 5000 K within 1.5 ns after the streamer bridges the gap, and in

the meanwhile the dielectric strength of the SC N2 drops to about 300 V. During spark de-

velopment the temperature rises to the peak value of 22000 K at 3 ns after start of the spark

formation. The spark formation time is much smaller than that in atmospheric pressure,

although with comparable reduced electric field. Due to the high heat transfer capability of

the SCF, the N2 temperature on the spark axis decays to 1500 K at about 10 μs after the

breakdown. After 70 μs the dielectric strength of the gap recovers to about half of the cold

breakdown value, and the recovery of the dielectric strength slows down afterwards because

of slower temperature decay. The obscene of a turbulence mechanism might be responsible

for the slower temperature decay in the late stage. The influence of the thermal conductivity

on the simulation results is investigated. Different settings of thermal conductivity result in

distinct temperature profiles along the time axis, but the differences are very small. Both

experimental and numerical investigations indicate that SCF is an environmental harmless

insulating medium with proven high breakdown voltage and fast recovery speed.

CHAPTER 6

COMPARISON OF EXPERIMENT AND

MODEL

6.1 Introduction

In chapter 4 we have measured the breakdown voltage and dielectric recovery in SC switches

under various voltages sources. The simulation of the discharge and recovery in SCFs has

been introduced in chapter 5. In this chapter, by comparing the experimental results with

the calculations, we test the validity of the models generated in our work, and verify the

properties of SCFs as switching media in depth.

In section 6.2 the dielectric strength of SC N2 is calculated by simple Paschen’s law

and by streamer inception criterion with enhanced ionization, respectively. The measured

breakdown voltages are compared with the theoretical calculations. Section 6.3 tests the two

theoretical models introduced in chapter 5, by comparing the measured recovery breakdown

voltages of SC N2 switches with the simulation results. Conclusions are given in section

6.4.

6.2 Breakdown voltage in SCFs

6.2.1 Principle of Paschen’s law

As described in chapter 3.2, the breakdown mechanisms of a gas insulator: Townsend mech-

anism and streamer mechanism, can be described both by the Paschen’s law. Here the prin-

ciple of the Paschen’s law is generally introduced.

In a homogeneous field, if an avalanche is developing from a single electron at the

cathode, the number of the electrons Ne at distance x from the cathode can be described

91

92 6. COMPARISON OF EXPERIMENT AND MODEL

by [243]:

Ne = exp

[∫ x

0(α −η )dx

]= exp[(α −η )x], (6.1)

in which α is the ionization coefficient and η the attachment coefficient. The number of

the positive ions Ni left in the avalanche tail can be calculated from the value of Ne, using

equation

Ni =

∫ x

0αNedx =

αα −η

{exp[(α −η )x]−1}. (6.2)

Townsend mechanism

If the electron number Ne in the first avalanche is lower than a critical number Ncr, the

positive ions as well as the photons emitted from the avalanche lead to the start of a next

avalanche at the cathode. New initial electrons are released from the cathode, according to

the secondary emission law, with the coefficient denoted as γ . The number of the new initial

electrons N′e can be calculated with:

N′e = γNi = γ

αα −η

{exp[(α −η )d]−1}. (6.3)

If the number of the new electrons satisfies the relation N′e ≥ 1, the successive avalanche

developed from the new electrons will be larger than the previous one. And so on, the

following avalanches grow steadily, finally causing the breakdown of the gap. The break-

down following this mechanism is called ’Townsend mechanism’. So the criterion for the

Townsend breakdown can be expressed by equation:

γα

α −η{exp[(α −η )d]−1} ≥ 1. (6.4)

Equation (6.4) can be rewritten as

(α −η )d ≥ ln

[α −η

αγ+1

]. (6.5)

In a gas with small or negligible electron attachment, we have relation α >> η . So the

right side of equation (6.5) can be simplified to be:

ln

[α −η

αγ+1

]≈ ln(1/γ +1) = KTown, (6.6)

in which KTown is the discharge constant corresponding to Townsend breakdown mechan-

ism. The value of (α −η ) can be measured empirically and the measured value can be

described by

(α −η )

p= A · exp(

−Bpd

V), (6.7)

6.2. BREAKDOWN VOLTAGE IN SCFS 93

in which p is the gas pressure; d is the gap width; A and B are constants depending on the

gas composition, related to the primary ionization coefficient. A is the saturation ionization

in the gas at particular E/p (electrical field stress/pressure), and B is related to the excitation

and ionization energies [249].

At the breakdown voltage Vb the relation in equation (6.5) must be fulfilled. Combining

equations (6.5)-(6.7), the breakdown voltage of a gas undergoing Townsend mechanism can

be calculated by

Vb =Bpd

lnApd

KTown

=Bpd

lnApd

ln(1+1/γ )

. (6.8)

Streamer mechanism

On the other hand, if the number of electrons Ne in the first avalanche reaches a critical value

Ncr, the spatial distribution of the electron in the avalanche head and positive ions in the

avalanche tail will generate a space charge induced electric field EL. Under the combination

of EL and the external field, the total electrical field is locally enhanced. Ionization is

increased at the place of the locally enhanced electric field and new avalanches are initiated

and propagate. Streamer is formed by the coalescence of these avalanches. Eventually when

the streamer bridges the inter-electrode gap, breakdown occurs. This breakdown mechanism

is called ’streamer mechanism’.

In a homogeneous electric field the criterion of streamer breakdown can be written as:

Ne = exp[(α −η )xcr]≥ Ncr, with xcr ≤ d. (6.9)

In a non-homogeneous electric field the relation is expressed by:

Ne = exp

[∫ xcr

0(α −η )dx

]≥ Ncr, with xcr ≤ d. (6.10)

If we write ln(Ncr) = Kstreamer in equations (6.9) and (6.10), we can easily find that actually

the criteria for Townsend mechanism and streamer mechanism can be expressed by the same

equation, only with different discharge constants: Kstreamer for streamer mechanism and

KTown for Townsend mechanism. Hence equation (6.8) is also applicable for the calculation

of breakdown voltage following streamer mechanism (in a homogeneous electric field), if

we implement the constant Kstreamer instead of KTown in the equation.

For a gap width of several to tens of centimeter the value of the critical electron number

is assumed to be Ncr = 106 −108. The constant for streamer mechanism breakdown has

then the value of Kstreamer = 13.8−18.4 [243].

6.2.2 Violation of simple Paschen’s curve

In high pressure gases including SCFs, the measured breakdown voltage is found to be

lower than the calculated value by the Townsend mechanism. The possible reasons are:

94 6. COMPARISON OF EXPERIMENT AND MODEL

1) The electron-field emission from the cathode under high density situation [18,27];

2) The ionization is enhanced at the protrusion on the electrode surface roughness

[53];

3) Particles or dusts are responsible for the micro-discharge generated near by the

electrodes [53, 250].

Simply calculating the breakdown voltage from equation (6.8) using the constant KTown or

Kstreamer cannot precisely predict the breakdown voltage in high pressure gases. In order to

more precisely calculate the breakdown voltage in SCFs, in our work we take the factor of

enhanced ionization into consideration. The breakdown voltages in N2 calculated from two

approaches: I. Paschen’s curve calculated from the Townsend breakdown mechanism and

II. streamer inception criteria taking into account surface roughness (enhanced ionization

coefficient), are compared with the measurements in SC N2 switches obtained in chapter 4.

6.2.3 Comparison of experiments with theories

Approach I. Paschen’s curve in N2

The Paschen’s curve in N2 can be calculated from equation (6.8). The constants in equa-

tion (6.8) are A = 112.50 ionization/(kPa · cm) and B = 2737.50 V/(kPa · cm) [251]. The

discharge constant KTown [251] has the form of:

KTown =

⎧⎪⎪⎪⎪⎪⎪⎨⎪⎪⎪⎪⎪⎪⎩

A

exp(2.5819× (pd)−0.0514

) , with 0.0133 ≤ pd

kPa · cm≤ 3

A

exp(2.4043× (pd)0.1030

) , with 3 ≤ pd

kPa · cm≤ 100

A

exp (3.8636), with 100 ≤ pd

kPa · cm≤ 1400

. (6.11)

Approach II. Streamer inception taking into account surface roughness

If a gap filled with SC N2 (density nN2) is applied with an electric field of E, avalanches

are initiated from the places where have highest reduced electric field E/nN2and start to

propagate. These places can be either a small protrusion on the electrode surface or the low

density region of the discharge channel. Usually these are the hottest regions in the center

of the channel, but with the varying pressure in the channel, in reality it might also be at the

boundaries. If the avalanche attains a critical electron number Ncr within xcr ≤ d, it leads

to fast moving streamers from its head. These streamers can result in partial or complete

breakdown in non-uniform field gaps.

We calculate the breakdown voltage according to the discharge parameters on the axis,

by assuming a streamer initiating from a semi-ellipsoid protrusion on the electrode surface,

seen in figure 6.1. The major semi-axis of the protrusion is 20 μm, and the minor semi-axis

6.2. BREAKDOWN VOLTAGE IN SCFS 95

Figure 6.1 – The geometry of the protrusion on the surface of the electrode [16].

10 μm. So the electric field distribution can be calculated with [16]

E(x) = E0

⎧⎪⎪⎨⎪⎪⎩1−

1

2ln

x+ a+ c

x+ a− c− (x+ a)c

(x+ a)2 − c2

1

2ln

a+ c

ac− c

a

⎫⎪⎪⎬⎪⎪⎭, (6.12)

in which E0 is the averaged electric field; a and b are the parameters of the protrusion

geometry, seen in figure 6.1; c is given as c =√

a2 −b2.

The streamer inception criterion can be expressed by [252]

∫ xcr

0α (E(x)) dx = ln(Ncr), (6.13)

in which E(x) is the electrical field at the distance x from the tip of the protrusion; Ncr is the

critical number of the electrons; α [m−1] is the ionization coefficient dependent on E/nN2

and is got from BOLSIG+ [225] (more detailed discussion can be found in [103]). The

value of ln(Ncr) for N2 is a function of the pd, which can be calculated by [253]

ln(Ncr) =

⎧⎪⎨⎪⎩

13.4+1.74ln(pd), 2×10−3 ≤ pd

bar · cm≤ 0.05

5.75−0.76ln(pd), 0.05 ≤ pd

bar · cm≤ 10

. (6.14)

The criterion of breakdown of the gap in this work is defined as: under an electric field

E0 = Ebd in equation (6.12), if equation (6.13) is satisfied at xcr ≈ d, we say that the streamer

can bridge the electrodes hence cause the breakdown of the whole gap.

Comparison with experimental measurements

The simple Paschen’s curve as well as the breakdown voltage calculated from the streamer

inception criterion with enhanced ionization are plotted in figure 6.2 and figure 6.3. The

discontinuity of the dashed line in figure 6.2 is caused by the dependence of ln(Ncr) on the

value of the pd, as shown in equation (6.14). The measured dielectric strength of SC N2

96 6. COMPARISON OF EXPERIMENT AND MODEL

switches are plotted in the figure as well. The calculated breakdown electric field Ebd and

reduced breakdown electric field Ebd/p are compared with the measurements.

The measured Ebd in SC N2 is as high as 180 kV/mm at pd = 50 bar ·mm. This is

comparable to solid insulating materials which have dielectric strengths reported to be

10−150 kV/mm for our gap width range. In the case of very thin films, some materi-

als have a higher dielectric strength (around 400 kV/mm for 40 μm film of Kapton) [254].

From the measurements we can find that in general Ebd increases with higher value of pd,

but the gain slows down for higher pd values. This observation confirms the description by

Cohen [255] in his work on electric strength of highly compressed gases.

0 10 20 30 40 50 60 70 800

50

100

150

200

250

300

pd [bar*mm]

Fast pulse, 0.37 mm Fast pulse, 0.6 - 0.66 mm

Fast pulse, 0.26-0.32 mm Fast pulse, 0.2-0.25 mm Moderate pulse, 0.3 mm

Moderate pulse, 0.25 mm Slow pulse, <=0.16 mm

Simple Paschen’s curve

Streamer inception criterion

Brea

kdow

n fie

ld E

bd [k

v/m

m]

Figure 6.2 – Comparison of the experimental data on the breakdown field Ebd in SC N2 switches

with theoretical calculations. Solid line represents Paschen’s curve in N2; dashed line represents

the calculated breakdown field following the streamer inception criterion with enhanced ioniza-

tion at the small protrusion on electrode surface.

At pd value below 15 bar ·mm the measured Ebd matches the prediction by Paschen’s

law. Above this value deviation from Paschens’s curve is observed, and the value of Ebd

tends to rise more slowly from pd = 40 bar ·mm onward. No obvious distinction regarding

to the steepness of the voltage sources is observed. Except for d > 0.6 mm, the measured

Ebd does not show much difference at different gap widths. The failure of Paschen’s law

under high pd value was reported as associated with field emission of electrons from the

cathode, as described in [27].

The measured Ebd/p of SC N2 switches is plotted in figure 6.3. Ebd/p in SC N2 is

found to decrease fast with increasing pd below 10 bar ·mm, after then the slope becomes

more steady. By comparing with the Paschen’s law we find that the measured Ebd/p in

SC N2 matches the Paschen’s curve for fast rising pulses at pd < 5 bar ·mm only. For the

6.3. DIELECTRIC RECOVERY IN SCFS 97

0 10 20 30 40 50 60 70 800

1

2

3

4

5

6

7

8

pd [bar*mm]

Redu

ced b

reakd

own f

ield [

kV/m

m/ba

r]

Fast pulse, 0.37 mm Fast pulse, 0.6 - 0.66 mm

Fast pulse, 0.26-0.32 mm Fast pulse, 0.2-0.25 mm

Moderate pulse, 0.3 mm

Moderate pulse, 0.25 mm

Slow pulse, <=0.16 mm

Simple Paschen’s curve

Streamer inception criterion

Figure 6.3 – Comparison of the experimental data on the reduced breakdown field Ebd/p in SC

N2 switches with theoretical calculations. Solid line represents Paschen’s curve in N2; dashed

line represents the calculated reduced breakdown field following the streamer inception criterion

with enhanced ionization at the small protrusion on electrode surface.

moderate and slow pulses as well as the fast pulses at pd > 5 bar ·mm the measured Ebd/p

is lower than the prediction by Paschen’s law. For pd above 20 bar ·mm, the dielectric

strength calculated by the streamer inception criterion with enhanced ionization matches

the measured values.

6.3 Dielectric recovery in SCFs

6.3.1 Validation of simple analytic model - comparison with an air plasmaswitch

The recovery time in air predicted by the simple analytic model introduced in chapter 5.2

is compared with the experimental results of an air-flushed plasma switch with pressure

of 2−8 bar. The air plasma switch was tested under a voltage source with repetition rate

of 10−1000 Hz and peak voltage of 30 kV. The criterion of defining the recovery of the

switch δ is the same as that of the SC switch (B) under 1 kHz source (introduced in section

4.3). The reciprocal of the repetition rate at which δ ≥ 80% is taken as the recovery time of

the air plasma switch [194].

The recovery time of the air plasma switch estimated by this model is plotted as function

of the air flow rate in the range of 0−40 m3/h at working pressure 2.5 bar (corresponding

to flow velocity 0−19 m/s in a 7.35 mm gap) in figure 6.4. The experimental results of the

98 6. COMPARISON OF EXPERIMENT AND MODEL

0 20 40 60 80 1000

5

10

15

20

25

30

35

Flow rate at STP [m3/h]

Rec

over

y tim

e [m

s]

Modeling results

Experimental results

Figure 6.4 – Predicted recovery time of the air plasma switch after the energy deposition of

0.7 J, and comparison with the experimental results. Gap width 7.35 mm, flow rate at STP zero

to 98 m3/h (corresponding to flow rate of 0−40 m3/h and flow velocity of 0−19 m/s in the

gap at working pressure 2.5 bar).

recovery time are also plotted in the figure. From figure 6.4 we can find that the calculated

recovery time is in the same order of magnitude, and is almost twice of the measured values.

There are several factors that might cause the deviation of the modeled value from the

experimental results. First of all, the heat transfer coefficient is taken from the value corres-

ponding to the average temperature of the hot gas over the temperature decay range, and is

kept constant in the process. Secondly, the simple model assumes homogeneous temperat-

ure T, density ρ , and pressure p profiles inside the channel, whereas in practice the profiles

have peak values on axis or on outer radius. Thirdly, heat conduction to the electrodes is not

included. This lack of heat conduction mechanism is partly compensated by the heat con-

vection between the gas on the spark channel outer edge and the environmental gas under

situation of larger temperature difference than that in reality. Moreover, radiation, which is

not accounted for as well, also reduces the recovery time. Last but not least, the breakdown

energy is taken as a constant input parameter, whereas from the experimental measurements

we observed that the breakdown voltage varies slightly with the experimental settings such

as repetition rate and gap width.

6.3.2 Validation of extended physical model - comparison with SC switchmeasurements

Effects of thermal conductivity

The temperature decay inside the spark channel strongly depends on the thermal conduct-

ivity k of the medium. The impact of k on the simulation results of the extended model

6.3. DIELECTRIC RECOVERY IN SCFS 99

introduced in chapter 5.4 is inspected here.

0 0.5 1 1.5 2 2.5x 104

0

1

2

3

4

5

6

Temperature [K]

Ther

mal

con

duct

ivity

[Wm−1

K−1 ]

k16(a)k16(b)

Figure 6.5 – Thermal conductivity of N2 calculated with the two sub-equations in (5.26). Solid

line - equation (5.26(a)), Dash line - equation (5.26(b)).

10−11 10−10 10−9 10−8 10−7 10−6 10−50

0.5

1

1.5

2

2.5 x 104

Time [s]

Tem

pera

ture

in th

e ax

is [K

]

Tg for k16(b)Tg for k16(a)

Figure 6.6 – Modeled N2 temperature in the axis of the spark channel with thermal conductivity

k introduced in equation (5.26(a)) and equation (5.26(b)) respectively. The initial parameters are

taken from table 5.2.

Figure 6.5 gives the k of N2 calculated with sub-equation (5.26(a)) and (5.26(b)) in the

temperature range of 300−25000 K. The value of the thermal conductivity calculated from

100 6. COMPARISON OF EXPERIMENT AND MODEL

the two equations differs when Tg > 2000 K, and the largest disparity happens at temperat-

ures around 7000 K and 15000 K. The modeled gas temperatures on the axis of the spark

channel obtained with the two different thermal conductivity values are given in figure 6.6.

The figure shows that temperature is not very sensitive on the choice of thermal conductivity

model.

Effects of working pressure

With the thermal conductivity given in equation (5.26), the pressure dependence of the re-

covery process in N2 after breakdown is investigated with the extended model introduced

in chapter 5.4. The dielectric recovery breakdown voltage of the SC switch gap is calcu-

lated with the streamer inception criterion with enhanced ionization, as been introduced in

section 6.2.3. Three working pressures: 80 bar, 10 bar, and 5 bar are simulated. The basic

parameters of the models are given in table 6.1, while the other initial parameters can be

calculated by the scaling properties given in table 5.2. Due to the unsolved numerical in-

stability at larger spark radius in the simulation, we choose the same initial radius: 35 μm

for the various pressures.

Table 6.1 – Background parameters of the modeling.

Pressure Gap width Temperature Initial radius

80 bar 0.3 mm 300 K 35 μm

10 bar 2.0 mm 300 K 35 μm

5 bar 2.0 mm 300 K 35 μm

The simulated recovery breakdown voltage in N2 at these three working pressures are

given in figure 6.7. The simulated cold breakdown voltage has a value of 29 kV at p = 80 bar,

d = 0.3 mm, 22 kV at p = 10 bar, d = 2 mm, and 11.8 kV at p = 5 bar, d = 2 mm, respect-

ively. After the breakdown of the medium, the withstand voltages at p = 80 bar and p = 10 bar

s predicted to decrease to approximately 300 V, while at p = 5 bar the value drops below

100 V.

After the extinction of the applied energy (current lasting about 200 ns), the breakdown

voltages at the three working pressures start to recover. At a time moment of 200 μs after

the breakdown, the breakdown value at 80 bar recovers to approximately 50 % of the cold

breakdown value. The recovery breakdown voltage at p = 10 bar and at p = 5 bar, however,

recovers to less than 25 % of the cold breakdown voltage at the moment of 200 μs after the

breakdown.

The measured recovery breakdown voltages of SC switch (B) at time lags between

two pulses in the range of 200 μs−1 s are also plotted in figure 6.7. The values at time

lags shorter than 200 μs could not be measured with the existing setups. The measured

recovery breakdown voltage increases with larger medium pressure, which is consistent

with the modeling results. The simulated cold dielectric strength at 80 bar, d = 0.3 mm is

96.7 kV/mm, while the experimental results at 75 bar, d = 0.25 mm is 96 kV/mm at the

6.4. CONCLUSIONS 101

10−10 10−9 10−8 10−7 10−6 10−5 10−4 10−3 10−2 10−1 100

102

103

104

105

Time [s]

Brea

kdow

n Vo

ltage

[V]

29 kV

Modeling, 80 bar, d=0.3 mm

Experimental, 10 bar, d=0.25 mm

Experimental, 75 bar, d=0.25 mm

Modeling, 10 bar, d=2.0 mm

Modeling, 5 bar, d=2.0 mm

22 kV

11.7 kV

Figure 6.7 – Comparison of the experimental and modeling results of the recovery breakdown

voltage in SC N2 switch at various N2 pressures.

repetition of 5 Hz (time lag between pulses 0.2 s). Good consistency is found between the

simulation and measurements of the cold breakdown voltage.

The simulated recovery breakdown voltages are compared with the measured values.

From the comparison we can find that at a similar gap width, the simulated breakdown

voltages have good consistency with the experiments, though are slightly lower than the

experimental measurements. The percentage of the simulated recovery breakdown voltage

(at p = 80 bar, d = 0.3 mm) to the cold breakdown value at 200 μs is 50 %. The experi-

mental results of 75 bar, 0.3 mm at 5 kHz repetition rate (time lag between pulses 200 μs)

are 80 % of the value at 5 Hz. The possible reasons of the lower calculated recovery break-

down voltage than measured values have been discussed in chapter 5.5.

6.4 Conclusions

We calculated the dielectric strength in SC N2 using two approaches: Paschen’s law using

simplified discharge constants and streamer inception criterion with enhanced ionization.

The measured breakdown voltages in SC N2 switches are compared with the calculations.

The deviation of the dielectric strength from the simple Paschen’s curve at high pd value is

observed. Breakdown voltage calculated by streamer inception with enhanced ionization is

found to match the measurements in SC N2 in the high pd range.

The simple analytic model is validated by comparing the simulation results in air with

the measurements of an air plasma switch. The validation of the extended physical model is

done by comparing the simulation results in SC N2 with the measurements in a SC switch.

The dependence of the extended model on the thermal conductivity of the insulating me-

102 6. COMPARISON OF EXPERIMENT AND MODEL

dium is investigated. The modeled recovery breakdown voltages at different pressures are

compared. The simulation results are compared with the experimental measurements in SC

switch (B) (under repetition operation mode up to 5 kHz.

Table 6.2 compares the experimental and theoretical results of the dielectric strength

and recovery time in SC N2 switches. Good consistency exists between the experimental

measurements and theoretical calculations. The Paschen’s curve calculated from simplified

discharge constant is consistent with the measured dielectric strength in SC N2, in the range

of p ·d ≤ 20 bar ·mm. Above this value the Paschen’s curve gives too high values, whereas

the streamer inception criterion with enhanced ionization mechanism gives good prediction

of the dielectric strength in SC N2 at higher pd values. The modeling results of the recovery

breakdown voltage are slightly lower than the experimental values, and improvement of the

present model could be researched.

Table 6.2 – Comparison of the experimental and theoretical results of breakdown and recovery

in SC N2 switches.

Parameter Experiment Model

p ·d ≤ 18 bar ·mm follows

Paschen’s curve

(with simplified constant);

Breakdown field 60−180 kV/mm p ·d > 18 bar ·mm follows

streamer inception mechanism

(with enhanced ionization)

Recovery time < 200 μs at 75 bar 200 μs at 80 bar

(Vrecov = 80 %) (Vrecov = 50 %)

CHAPTER 7

CONCLUSIONS AND RECOMMENDATIONS

7.1 Conclusions

This thesis work studies the characteristics of supercritical fluids applied to high power

switching. This is a new field that has rarely been explored. Literature about the phys-

ical properties and applications of SCFs in multiple applications were reviewed. Based on

the data provided by a simple analytic model, we designed and manufactured three SCF

insulated switches. Under different voltage sources: fast rising pulses, moderately rising

pulses, slowly rising pulses, high repetition rate pulses up to 5 kHz, and a simple synthetic

arc current source, the breakdown and recovery characteristics of the SC N2 switches are

extensively studied. With an extended physical model the discharge and recovery process in

SC N2 was investigated theoretically. The modeling results were compared with the exper-

imental measurements. Good consistency between the experimental and theoretical results

was observed, while the disparities were discussed. Table 7.1 gives a short summary of the

work that has been carried out within this dissertation.

Properties of SCFs

The state equation of a SCF is introduced and the physical parameters of SCFs such as

viscosity, density, diffusivity, heat capacity, and thermal conductivity are extrapolated from

literature. SCFs have liquid like properties such as high density and high thermal conduct-

ivity; gas like properties such as low viscosity and high diffusivity. Via literature survey,

the breakdown voltage in SCFs is proven to be very high. Although few research on the

dielectric recovery of SCFs has been carried out, the combined advantages of liquids and

gases indicate the capability of fast dielectric recovery of SCFs.

103

104 7. CONCLUSIONS AND RECOMMENDATIONS

Table 7.1 – Summary of the work on SCF switching in this thesis work.

Realized Analysis

Experimental analysis Experimental analysis of

Various SC of breakdown and recovery current interruption capability

switch setups ⇑comparison

⇓Two models Analytic and numerical −

results of discharge and recovery

Experimental measurements in SCF insulated switches

Several SCF insulated switches as well as their experimental setups are designed and man-

ufactured. The dielectric strength of SC N2 switches is studied experimentally. SC N2

shows excellent insulation properties: insulation strength of 60−180 kV/mm is observed

in sub-millimeter gaps.

The dielectric recovery of SC N2 switches is analyzed under repetitive voltage pulses

with repetition rates up to 5 kHz. The experimental results prove that the recovery break-

down voltage in SC N2 increases with pd value, while too small gap width deteriorates the

recovery percentage of the switch. In high repetition rate mode, the recovery breakdown

voltage of SC N2 (at a pressure above 50 bar and gap width of 0.25 mm) is found to be

80 % of the cold breakdown value within 200 μs in non-flushed pre-firing mode. The re-

covery breakdown voltage at smaller gap width (0.15 mm) show less significant relationship

to the repetition rate compared to that at larger gap width (0.25 mm).

The current interruption capability of high-frequency (≥ 7 kHz) and low (< 500 A) cur-

rent of SC N2 is investigated experimentally. SC N2 switch with fixed electrodes and small

inter-electrode distance can successfully interrupt the current with rate-of-rise in the range

of 0.14−3 A/μs and oscillation frequency up to 100 kHz at approximately 2 ms after the

breakdown. At the current interruption the returning voltage has a value of 200−500 V at

1.5 mm gap width. The current slope di/dt at the interruption moment is between 2000 A/s

and 5000 A/s, in a 40 bar, 2.2 mm gap. Forced flushing results in faster recovery of the

former arc channel, increased ac voltage, earlier successful current interruption, and in-

creased rate-of-rise of transient recovery voltage du/dt. The experimental results indicate

the high arc interruption capability of SC N2.

Modeling of the discharge in SCFs

Two models are developed to theoretically study the breakdown and recovery process in

SCFs. A simple analytic model utilizes the theory of gas cooling by adiabatic expansion

7.2. RECOMMENDATIONS FOR FUTURE WORK 105

and the subsequent heat transfer mechanism. The predicted recovery time of SC N2 gives

reference parameters for the design of the SC switches.

Via an extended physical model, the discharge formation, temperature decay, and dielec-

tric recovery in a SC N2 switch are simulated. The simulation results in a 80 bar SC N2

switch reveal that at 200 μs after the breakdown, the dielectric strength of the gap recovers

to about half of the cold breakdown value. Afterwards the recovery of the dielectric strength

slows down, because of the slower temperature decay. The absence of the turbulence mech-

anism might be responsible for the slower temperature decay in the late stage.

Comparison of experiment and model

The theoretical results of the breakdown and recovery in SC N2 switches are compared with

the experimental measurements. The Paschen’s curve calculated from simplified discharge

constant coincides with the measured dielectric strength of SC N2 in low pd range. At high

pd values Paschen’s curve gives too high value, while the streamer inception criterion with

enhanced ionization gives good prediction of the dielectric strength in SC N2. The modeling

results of the recovery breakdown voltage have good consistency with the experiments,

though are slightly lower than the experimental results, and possible reasons are discussed.

7.2 Recommendations for future work

Experimental work

• In the present work the thermodynamic parameters of the SCFs during discharge can

be only theoretically estimated. Diagnostic components could be added, measuring

the pressure inside the discharge channel. The plasma temperature can be measured

optically by e.g. spectroscopic methods.

• There are no reports yet about the kinetic parameters of plasmas in SCFs such as

the initial electron density, electron-ion recombination rate, and ionization rate. The

method in present work is scaling up the values at ground pressure to the working

pressure by the similarity law. It is interesting to do some experimental research on

the parameters of plasmas in high pressure gases including SCFs.

• For the study of arc interruption characteristics, non-moving electrodes and flushing

perpendicular to the arc channel are basic ingredients of the SC switch in this work.

For the future research on the arc interruption of SCFs, moving electrode contacts

and axial SCF flushing need to be considered in the SC switch design. Circuits that

can produce power frequency currents could be considered as well.

Theoretical analysis

The theoretical models generated in this work use some simplified methodologies e.g. sim-

plified kinetic mechanisms and one-dimensional geometry. These simplifications allow us

106 7. CONCLUSIONS AND RECOMMENDATIONS

to make the first step in theoretical study of discharges in SCFs, but have influence on the

accuracy of the simulation results. For further development of the theoretical models, the

following recommendations are made:

• The kinetic mechanisms need to be improved in the future theoretical models. More

reaction species need to be taken into account.

• Under continuous energy deposition, which mimics the discharge situation in a SC

switch applicable for circuit breakers, the mechanisms of thermal dissociation and

thermal ionization need to be considered.

• In the late stage of the extended physical model, mechanism of turbulent mixing

would be helpful to model the recovery of the spark channel more precisely.

• A two dimensional model would be able to more precisely study the streamer propaga-

tion and the subsequent heat transfer phenomenon in SCFs, in both in radial and axial

coordinates.

• Heat loss due to melting, evaporation, or direct sublimation of electrode materials

would mean a faster loss of thermal energy and thus a faster recovery. It would be

interesting to take this loss mechanism into account in a next research step.

APPENDIX

A1. State equation of nitrogen

The general state equation of a fluid can be expressed using the Helmholtz energy α [J/mol]

with independent variables of density ρ [mol/m3] and temperature T [K] by [114]

α (ρ,T) = α0(ρ,T)+α r (ρ,T), (A-1)

where α0(ρ,T) [J/mol] stands for the ideal gas contribution to Helmholtz energy; α r (ρ,T)

[J/mol] is the residual Helmholtz energy corresponding to the influence of inter-molecular

forces. Ideal gas Helmholtz energy can be written as

α0 = lnδ + a1lnτ + a2+ a3τ + a4τ−1+ a5τ−2+a6τ−3+ a7ln [1− exp(−a8τ )], (A-2)

in which a1 = 2.5, a2 =−12.76952708, a3 =−0.00784163, a4 =−1.934819×10−4,

a5 =−1.247742×10−5, a6 = 6.678326×10−8, a7 = 1.012941, and a8 = 26.65788.

The function form for the residual Helmholtz energy is expressed by:

α r =6

∑k=1

Nkδ ikτ jk +32

∑k=7

Nkδ ikτ jkexp(−δ lk )

+36

∑k=33

Nkδ ikτ jkexp(−Φk(δ −1)2)−β (τ − γk)2, (A-3)

in which the coefficients are given in table A-2 and table A-3.

Pressure of the fluid p [Pa] can be calculated as the ideal gas contribution plus a correc-

tion term given by the derivative of the residual Helmholtz energy:

p = ρRT

[1+δ

(∂α r

∂δ

)]τ. (A-4)

107

108 APPENDIX

The isochoric capacity cv [J/(mol ·K)] and isobaric capacity cp [J/(mol ·K)] of N2 are

calculated with

cv =−Rτ2

[(∂ 2α0

∂τ2

)δ+

(∂ 2α r

∂τ2

]; (A-5)

cp = cv+R

[1+δ

(∂α r

∂δ

)τ−δτ

(∂ 2α r

∂τ∂δ

)]2

[1+2δ

(∂α r

∂δ

)τ−δ 2

(∂ 2α r

∂δ 2

] , (A-6)

in which R [J/(mol ·K)] is the molar constant, δ = ρ/ρc the reduced density, and τ = Tc/T

the reduced temperature. The partial equations of α0 and α r used in the equations above

are (∂αr

∂δ

)τ=

6

∑k=1

ikNkβ ikτ jk +32

∑k=7

ikNkβ ikτ jkexp(−β lk )× (ik − lkβ lk )

+36

∑k=33

ikNkβ ikτ jkexp(−φk(β −1)2)−βk(τ − γk)2[ik −2δφk(β −1)]; (A-7)

τ2

(∂ 2α0

∂τ2

)δ=−a1+2a4τ−1+6a5τ−1+12a6τ−3 − a7a2

8τ2 exp(a8τ )

[exp(a8τ )−1]2; (A-8)

τ2

(∂ 2αr

∂τ2

)δ=

6

∑k=1

jk(jk −1)Nkδ ikτ jk +32

∑k=7

jk(jk −1)Nkδ ikτ jkexp(−β lk )

+36

∑k=33

Nkβ ikτ jkexp(−φk(β −1)2 −βk(τ − γk)2

)[jk −2τβk(τ − γk)]; (A-9)

δ(

∂αr

∂δ

)τ=

6

∑k=1

jkNkβ ikτ jk +32

∑k=7

jkNkβ ikτ jk exp(−β lk )× (ik − lkδ lk )

+36

∑k=33

Nkβ ikτ jkexp(−φk(β −1)2 −βk(τ − γk)2

)×[ik −2δφk(δ −1)]; (A-10)

δτ(

∂ 2αr

∂δ∂τ

)=

6

∑k=1

ikjkNkβ ikτ jk +32

∑k=7

jkNkβ ikτ jk × exp(−β lk )(ik − lkδ lk )

+36

∑k=33

Nkβ ikτ jk × exp(−φk(β −1)2 −βk(τ − γk)2

)× [ik −2δφk(δ −1)][jk −2τβk(τ − γk)];

(A-11)

109

Table A-2 – Parameters used in state equation of nitrogen.

k Nk ik jk lk

1 0.924803575275 1.0 0.25 0

2 −0.492448489428 1.0 0.875 0

3 0.661883336938 2.0 0.5 0

4 −0.192902649201×101 2.0 0.875 0

5 −0.622469309629×10−1 3.0 0.375 0

6 0.349943957581 3.0 0.75 0

7 0.564857472498 1.0 0.5 1

8 −0.161720005987×101 1.0 0.75 1

9 −0.481395031883 1.0 2.0 1

10 0.421150636384 3.0 1.25 1

11 −0.161962230825×10−1 3.0 3.5 1

12 0.172100994165 4.0 1.0 1

13 0.735448924933×10−2 6.0 0.5 1

14 0.168077305479×10−1 6.0 3.0 1

15 −0.107626664179×10−2 7.0 0.0 1

16 −0.137318088513×10−1 7.0 2.75 1

17 0.635466899859×10−3 8.0 0.75 1

18 0.304432279419×10−2 8.0 2.5 1

19 −0.435762336045×10−1 1.0 4.0 2

20 −0.723174889316×10−1 2.0 6.0 2

21 0.389644315272×10−1 3.0 6.0 2

22 −0.212201363910×10−1 4.0 3.0 2

23 0.408822981509×10−2 5.0 3.0 2

24 −0.551990017984×10−4 8.0 6.0 2

25 −0.462016716479×10−1 4.0 16.0 3

26 −0.300311716011×10−2 5.0 11.0 3

27 0.368825891208×10−1 5.0 15.0 3

28 −0.255856846220×10−2 8.0 12.0 3

29 0.896915264558×10−2 3.0 12.0 4

30 −0.441513370350×10−2 5.0 7.0 4

31 0.133722924858×10−2 6.0 4.0 4

32 0.264832491957×10−3 9.0 16.0 4

33 0.196688194015×102 1.0 0.0 2

34 −0.209115600730×102 1.0 1.0 2

35 0.167788306989×10−1 3.0 2.0 2

36 0.262767566274×104 2.0 3.0 2

110 APPENDIX

δ 2

(∂ 2αr

∂τ2

)τ=

6

∑k=1

ik(ik −1)Nkβ ikτ jk

+32

∑k=7

jkNkβ ikτ jk × exp(−β lk )[

(ik − lkδ lk )(ik −1− lkδ lk )− l2kδ lk]

+36

∑k=33

Nkβ ikτ jkexp(−φk(β −1)2 −βk(τ − γk)2

)×{[ik −2δϕk(δ −1)]2 − ik −2δ 2ϕk

}.

(A-12)

Table A-3 – Parameters used in state equation of nitrogen.

k φk βk γk

33 20 325 1.16

34 20 325 1.16

35 15 300 1.13

36 25 275 1.25

A2. Integrator of the triggering signal generator

Pick-up antenna

Figure A-1 – Integrator of the triggering signal generator for the ICCD camera.

111

A3. Calibration of current measured by Rogowski coil

From figure A-2 we can derive the relation between signal Vcoil, which comes out of the

Rowgowski coil and signal Vout collected by the oscilloscope

Vout =1

Ci

∫ (Vcoil −Vout

Ri− Vout

R1

)dt. (A-13)

in which Vout is the signal read from oscilloscope, and τ = Ri ·Ci with Ri and Ci respectively

1060 Ω and 879 pF. With known output voltage, the real voltage on the coil can be rewritten

with ∫Vcoildt = τVout+

(1+

Ri

R1

)∫Voutdt. (A-14)

Vcoil Vout

Ro

Ri

Ci R1

Figure A-2 – Circuit diagram of integrator of current measurement.

The arc current can be calculated from the voltage on the Rogowski coil

i(t) =1

M

∫Vcoildt, (A-15)

where M is the mutual inductance of the Rogowski coil. By interpreting equation (A-14)

into equation (A-16), we can get the expression of arc current:

i(t) =Voutτ

M+

(1+

Ri

R1

) ∫Vout

Mdt. (A-16)

112 APPENDIX

A4. Cylindrical coordinate in Euler system

The Euler equations which covers the equations of conservation of mass, momentum, and

energy are

∂ρ∂ t+� · (ρu) = 0; (A-17a)

∂ (ρu)

∂ t+� · (u

⊗(ρu))+�p = 0; (A-17b)

∂ε∂ t+� · (u(ε +p)) = 0. (A-17c)

In cylindrical coordinate, we have the expression:

� ·A = 1

r

∂ (A1r)

∂ r+

1

r

∂ (A2)

∂Φ+

∂ (A3)

∂z; (A-18a)

�A = e1∂ (A)

∂ r+ e2

1

r

∂ (A)

∂Φ+ e3

∂ (A)

∂z. (A-18b)

The total energy of the gas satisfies ∂ε∂ t+� · (u(ε +p)) = Qin −Qout, with Qin and Qout

representing the energy per unit time which comes in and goes out of the system. Also we

have energy stored in the vibration excited level εV and electronic excited level εE. Com-

bining equation (A-17) and (A-18), we can write the equation of conservation in cylindrical

coordinate as:

∂ρ∂ t+

1

r

∂ (ρur)

∂ r= 0; (A-19a)

∂ (ρu)

∂ t+

1

r

∂ (ρu2r)

∂ r+

∂p

∂ r= 0; (A-19b)

∂ε∂ t+

1

r

∂ (u(ε +p)r)

∂ r= Qin+Qout; (A-19c)

∂εV

∂ t+

1

r

∂ (uεVr)

∂ r) = ηVQR+QVT; (A-19d)

∂εE

∂ t+

1

r

∂ (uεEr)

∂ r) = ηEQR+QVT. (A-19e)

113

A5. Simulation of electron-ion recombination in N2 discharge

We use a zero-dimensional modeling platform ZDPlasKin [256] to model the dynamics of

species in a streamer channel. The description of dynamics is given by

d[ni]

dt= Si , (A-20)

where the source term Si represents the total rate of production and destruction of species i in

various processes. We use N2 kinetics from [227,256] which includes the following species

and states: e, N, N2, N+, N+2 , N+3 , N+4 , N2(A3 Σ+u , B3Πg, C3Πu, a′1Σ−u ), N2(X1, v = 1−8).

The rate constants for electron-neutral interactions are calculated using BOLSIG+ solver

[225].

For self-consistent coupling between the electric field and the equation (A-20) we use

the approach proposed in [257], where the electric field obeys the equation

dE

dt=

ε0

eμ (|E|) E ne . (A-21)

Essentially we apply the same initial conditions as in [257], but scaled up to 80 bar.

The maximum electric field is assumed to be 150 kV · cm−1 at standard temperature and

pressure (STP), which scales to E(0) = 12 MV · cm−1 at 80 bar according to the similarity

laws. Maximum electric field E(0) corresponds to the initial electron density from the table

5.2 and reads as ne(0) = ne,0 = 8.87×1020 m−3. The equations (A-20) and (A-21) are in-

tegrated together to obtain a decay of the electric field consistent with the conductivity. The

integration is continued up to the electric field reaches the value of 0.4 MVcm−1. After-

wards, we continue integration with a constant electric field of 0.4 MVcm−1 until end of

the pulse (total pulse duration is taken to be equal to 100 ns), and then in a vanishing field.

The results of ZDPlasKin run are imported and analyzed in an open source software

package PumpKin [222], which is freely available at www.pumpkin-tool.org. PumpKin

automates the process of finding all principal pathways, i.e. the dominant reaction se-

quences, in a chemical reaction system. We run PumpKin for the time interval of [0.01,1]ns and for the species of interest of electron. The result of analysis shows that the lifetime

of N+2 is very short about 12 fs, while N+4 has much longer lifetime of about 9.1 ps. Un-

der these conditions, the dominant electron loss mechanism is a electron-ion dissociative

recombination given by

e+N+4 → N2+N2 . (A-22)

According to PumpKin, this reaction is responsible for the 100 % of the destruction of

electron with a rate of 1.4 ·1022 cm−3 s−1. On the other hand, the electron impact ionization

e+N2 → N+2 +2e , (A-23)

is responsible for 98 % of the production of electrons with a rate of 2.0 ·1015 cm−3 s−1.

This is the reasoning why we, under the assumption that the similarity laws are applic-

able at 80 bar pressure, consider the kinetic equation in form of (5.16).

114 APPENDIX

A6. Ionization and dissociation mechanisms

Here we only consider the ionization up to double ionization stage, while the higher level

is neglected. We assume that all the molecules are assumed to be completely dissociated

before ionization begins, and all atoms are assumed to be singly ionized before the number

of doubly ionized particles becomes noticeable [38].

In this approach the state of equation and caloric equation are derived from refer-

ences [258]. The difference between the calculation here and the reference is that the con-

centration of molecules is also taken into account. The indexes used in the calculations are

given in table A-4 .

Table A-4 – The indexes used in the calculation.

Parameter Symbol Value

Number of total particle Ntotal NN2+N0 +Ne +N1 +N2

Number density of ntotal MN2NN2+M0N0+

total particle MeNe +M1N1 +M2N2

Electron mass Me 9.10×10−31 [kg]

Nitrogen atom mass M0 1.163×10−26 [kg]

Nitrogen ion mass Mi ≈ 1.163×10−26 [kg]

Nitrogen molecular mass MN22.326×10−26 [kg]

Concentration of molecule CN2NN2

/Ntotal

Concentration of atom C0 N0/Ntotal

Concentration of electron Ce Ne/Ntotal

Concentration of single ion C1 N1/Ntotal

Concentration of double ion C2 N2/Ntotal

Total Pressure P −Electron Pressure Pe P×Ce

Statistic weight gn g1 = 9; g2 = 6

of ion on stage n

Statistic weight of atom g0 g0 = 4

Boltzmann’s constant k 1.38×10−23 [J/K]

Plank’s constant h 6.626×1034 [J·s]

Dissociation energy I0 3.3484×104 [kJ·kg−1]

Single ionization energy I1 9.9806×104 [kJ·kg−1]

Double ionization energy I2 2.0321×105 [kJ·kg−1]

Gas constant R R = 2.8809×102 [J·K−1·kg−1]

Temperature T −

We know Saha’s equation for dissociation

n0n0

nN2=

g0 ·g0

gN2

[2πMN/2kT]3/2

h3e−I0RT , (A-24)

115

and Saha’s equation for ionization

ni+1ne

ni=

ge ·gi+1

gi

[2πMekT]3/2

h3e−Ii+1

RT . (A-25)

If we write the Saha’s equations in the format of concentration of different particles, we

have equation for dissociation

CN2

C0C0=

1

g0·g0gN2

[2πMN/2kT]3/2

h3 e−I0RT

·ntotal, (A-26)

in which C0C0CN2=

n0VntotalV

n0VntotalV

ntotalVnN2

V =n0n0nN2

1ntotal

; and Saha’s equation for ionization in format:

Ci

Ci+1Ce=

1

ge·gi+1gi

[2πMekT]3/2

h3 e−Ii+1

RT

·ntotal, (A-27)

in which Ci+1CeCi=

ni+1VntotalV

· neVntotalV

· ntotalVn0V =

ni+1nen0

1ntotal

. In the equation above if we write ntotal = P/kT,

then equation (A-27) actually is the same as the one given in [258].

The summary of all the particle concentrations should be

1 = CN2+C0+Ce+C1+C2+ ... (A-28)

The generation of electrons due to ionization satisfies the relation

Ce = C1+2C2+3C3... (A-29)

Combining equation (A-28) and (A-29), we have

1 = CN2+C0+2C1+2C2... (A-30)

All the concentrations can be expressed by the value of C0 and other parameters, seen as

CN2=

1

S0· P

kT·C2

0; (A-31a)

C1 =C0S1

Ce

kT

P; (A-31b)

C2 =C1S2

Ce

kT

P=

C0S1 ·S2

C2e

(kT)2

P2. (A-31c)

The values of S0, S1, and S2 are

S0 =g0 ·g0

gN2

[2πMN/2kT]3/2

h3e−I0RT ; (A-32a)

S1 =ge ·g1

g0

[2πMekT]3/2

h3e−I1RT ; (A-32b)

S2 =ge ·g2

g1

[2πMekT]3/2

h3e−I2RT . (A-32c)

116 APPENDIX

If we substitute equation (A-31a)-(A-32c) into equation (A-30), we can derive the solution,

though with an unknown value Ce inside. By assuming a value of Ce, we can calculate a

value of C0. The values of CN2, C1,C2 can be calculated with equation (A-31a)-(A-31c).

With equation (A-29) a new value of Cepre can be calculated. If the calculated Ce differs

larger than 0.1 % from the presumed value, a new value Ce−new = (Ce−pre+Ce)/2 is used

for the new round of calculation. The iterative process continues until the value of Ce

convergences to the required accuracy 0.1 %.

0 0.5 1 1.5 2 2.5x 104

0

20

40

60

80

100

120

Temperature [K]

Parti

cle

conc

entra

tions

[%]

CatomCion1Cion2CN2CNetotal concentration

Figure A-3 – Concentrations of particles in air for temperature up to 25000 K, pressure at 1 bar.

0 0.5 1 1.5 2 2.5x 104

0

20

40

60

80

100

120

Temperature [K]

Parti

cle

conc

entra

tions

[%]

CatomCion1Cion2CN2CNetotal concentration

Figure A-4 – Concentrations of particles in air for temperature up to 25000 K, pressure at 80 bar.

117

Figure A-3 and figure A-4 show the value of C0, C1, and C2 as function of temperature

at different pressures. From the figures we can see that thermal dissociation and ionization

happen at higher temperature when the pressure is higher. In both 1 bar and 80 bar situation,

the mechanisms become significant when the temperature is above 5000 K. However, from

literature survey, we learn that the establishing time scale of the ionization equilibrium for

nitrogen is quite long. The time scales of ionization equilibrium of several species against

the temperature can be found in [247]. According to the calculation, the time needed for

establishing ionization equilibrium in nitrogen in our case is between 1.5−60 μs. From

the time development of N2 dissociation under different temperatures given in [247], we

can see that for the temperature of 10000 K, the fraction of dissociation in nitrogen reaches

about 10−12 at the time of 1 μs. For temperature of 25000 K, the fraction reaches about

10−3 at 1 μs.

In our simulations given in chapter 5.4, the high temperature zone of the discharge chan-

nel (at 80 bar) vanishes with a time scale much shorter than the establishing time of disso-

ciation and ionization equilibrium, hence it is reasonable to neglect the impact of thermal

dissociation and ionization in our simulations.

BIBLIOGRAPHY

[1] Yasuhiko Arai, Takeshi Sako, and Yoshihiro Takebayashi. Supercritical fluids: mo-lecular interactions, physical properties, and new applications. Springer, 2002.

[2] Hiroshi Machida, Masafumi Takesue, and Richard L. Smith Jr. Green chemical pro-

cesses with supercritical fluids: Properties, materials, separations and energy. TheJournal of Supercritical Fluids, 60:2–15, 2011.

[3] Maya Takade, Tsuyoshi Kiyan, Kazusa Miyaji, Takao Namahira, Masanori Hara, and

Hidenori Akiyama. Plasma production in pressurized carbon dioxide up to supercrit-

ical conditions. 2009.

[4] Sven Stauss. Electric discharge microplasmas generated in highly fluctuating fluids:

Characteristics and application to the synthesis of molecular diamond. Bulletin of theAmerican Physical Society, 59, 2014.

[5] Emma Woollacott. Blue lightning spotted in saturn storm. http://www.tgdaily.com/

space-features/64833-blue-lightning-spotted-in-saturn-storm.

[6] Organic chaemical conversion induced pulse discharge plasma under high pressure

conditions. http://www.nuce.nagoya-u.ac.jp/L1/Plasma.htm.

[7] J. Zhang, A.H. Markosyan, M. Seeger, E.M. van Veldhuizen, E.J.M. van Heesch,

and U. Ebert. Numerical and experimental investigation of dielectric recovery in

supercritical n2. Plasma Sources Science and Technology, 24(2):025008, 2015.

[8] M. Goto, M. Mitsugi, A. Yoshida, M. Sasaki, T. Kiyan, T. Namihira, and H. Akiyama.

Reaction of organic compound induced by pulse discharge plasma in subcritical wa-

ter. In J. Phys.: Conf. Ser, volume 121, pages 1–4, 2008.

119

120 BIBLIOGRAPHY

[9] F. Oshima, S. Stauss, D. Z. Ishii, C.and Pai, and K. Terashima. Plasma microreactor

in supercritical xenon and its application to diamondoid synthesis. Journal of PhysicsD: Applied Physics, 45(40):402003, 2012.

[10] Takaaki Tomai, Ken Katahira, Hirotake Kubo, Yoshiki Shimizu, Takeshi Sasaki, Na-

oto Koshizaki, and Kazuo Terashima. Carbon materials syntheses using dielectric

barrier discharge microplasma in supercritical carbon dioxide environments. TheJournal of supercritical fluids, 41(3):404–411, 2007.

[11] Ayato Kawashima, Shinfuku Nomura, Hiromichi Toyota, Toshihiko Takemori,

Shinobu Mukasa, and Tsunehiro Maehara. A supercritical carbon dioxide plasma

process for preparing tungsten oxide nanowires. Nanotechnology, 18(49):495603,

2007.

[12] Nediljko Budisa and Dirk Schulze-Makuch. Supercritical carbon dioxide and its

potential as a life-sustaining solvent in a planetary environment. Life, 4(3):331–340,

2014.

[13] Y. Yankelevich, M. Wolf, R. Baksht, A. Pokryvailo, J. Vinogradov, B. Rivin, and

E. Sher. Nox diesel exhaust treatment using a pulsed corona discharge: the pulse

repetition rate effect. Plasma Sources Science and Technology, 16(2):386, 2007.

[14] Greenhouse gas inventory data. http://unfccc.int/ghg_data/items/3825.php.,.

[15] Kazuya Higuchi, Tsutomu Shimada, Minoru Itagaki, Teruyuki Sato, and Yoshihiko

Abe. Effects of electrode geometry and gas pressure on breakdown voltage of a

pseudospark discharge. Japanese journal of applied physics, 35(12R):6259, 1996.

[16] Masayuki Hikita, Shinya Ohtsuka, Nobuhiro Yokoyama, Shigemitsu Okabe, and

Shuhei Kaneko. Effect of electrode surface roughness and dielectric coating on

breakdown characteristics of high pressure co2 and n2 in a quasi-uniform electric

field. Dielectrics and Electrical Insulation, IEEE Transactions on, 15(1):243–250,

2008.

[17] Tsuyoshi Kiyan, Maya Takade, Takao Namihira, Masanori Hara, Mitsuru Sasaki,

Motonobu Goto, and Hidenori Akiyama. Polarity effect in dc breakdown voltage

characteristics of pressurized carbon dioxide up to supercritical conditions. PlasmaScience, IEEE Transactions on, 36(3):821–827, 2008.

[18] J.L. Hernandez-Avila, N. Bonifaci, A. Denat, and V.M. Atrazhev. Corona discharge

inception as a function of pressure in gaseous and liquid nitrogen. In ElectricalInsulation, 1994., Conference Record of the 1994 IEEE International Symposium on,

pages 493–496. IEEE, 1994.

[19] Y. Yin, J.L. Liu, H.H. Zhong, and J.H. Feng. Experimental study of the voltage

recovery characteristics of spark gap switch with different gases. In Pulsed PowerConference, 2007 16th IEEE International, volume 1, pages 459–463, June 2007.

BIBLIOGRAPHY 121

[20] M. Seeger, M. Schwinne, R. Bini, N. Mahdizadeh, and T. Votteler. Dielectric recov-

ery in a high-voltage circuit breaker in sf6. Journal of Physics D: Applied Physics,

45(39):395204, 2012.

[21] Ryo Ono, Yoshiyuki Teramoto, and Tetsuji Oda. Gas density in a pulsed positive

streamer measured using laser shadowgraph. Journal of Physics D: Applied Physics,

43(34):345203, 2010.

[22] L. Prevosto, G. Artana, B. Mancinelli, and H. Kelly. Schlieren technique applied to

the arc temperature measurement in a high energy density cutting torch. Journal ofApplied Physics, 107(2), 2010.

[23] Hiroshi Akatsuka. Progresses in Experimental Study of N2 Plasma Diagnostics byOptical Emission Spectroscopy, Chemical Kinetics. edited by Vivek Patel, 2012.

[24] K. Horii, M. Kosaki, A.J. Pearmain, and A.J. McNerney. Correlation of elec-

trical breakdown of supercritical helium in short gaps with partial discharge in cable

samples. Cryogenics, 23(2):102–106, 1983.

[25] Keiji Nakayama and Masaaki Tanaka. Simulation analysis of triboplasma generation

using the particle-in-cell/monte carlo collision (pic/mcc) method. Journal of PhysicsD: Applied Physics, 45(49):495203, 2012.

[26] S. Nakayama and D. Ito. Dc breakdown voltage characteristics in supercritical he-

lium: breakdown in nonuniform fields. Cryogenics, 26(1):12–18, 1986.

[27] Alan H. Cookson. Electrical breakdown for uniform fields in compressed gases. In

Proceedings of the Institution of Electrical Engineers, volume 117, pages 269–280.

IET, 1970.

[28] N. Yu Babaeva and G.V. Naidis. Two-dimensional modelling of positive streamer

dynamics in non-uniform electric fields in air. Journal of Physics D: Applied Physics,

29(9):2423, 1996.

[29] A.B. Sun, J. Teunissen, and U. Ebert. Why isolated streamer discharges hardly ex-

ist above the breakdown field in atmospheric air. Geophysical Research Letters,

40(10):2417–2422, 2013.

[30] Jeremy A. Riousset, Victor P. Pasko, and Anne Bourdon. Air-density-dependent

model for analysis of air heating associated with streamers, leaders, and transient

luminous events. Journal of Geophysical Research: Space Physics (1978–2012),115(A12), 2010.

[31] N.L. Aleksandrov, E.M. Bazelyan, I.V. Kochetov, and N.A. Dyatko. The ionization

kinetics and electric field in the leader channel in long air gaps. Journal of PhysicsD: Applied Physics, 30(11):1616, 1997.

122 BIBLIOGRAPHY

[32] N.L. Aleksandrov, E.M. Bazelyan, N.A. Dyatko, and I.V. Kochetov. Streamer break-

down of long air gaps. Plasma Physics Reports, 24:541–555, 1998.

[33] A. Kh Mnatsakanyan and G.V. Naidis. The vibrational-energy balance in a discharge

in air. High Temp.(Engl. Transl.);(United States), 23(4), 1986.

[34] G.V. Naidis. Simulation of streamer-to-spark transition in short non-uniform air gaps.

Journal of physics D: Applied physics, 32(20):2649, 1999.

[35] G.V. Naidis. Dynamics of streamer breakdown of short non-uniform air gaps. Journalof Physics D: Applied Physics, 38(21):3889, 2005.

[36] E. Marode. The glow-to-arc transition. Electrical Breakdown and Discharges inGases, pages 119–166, 1983.

[37] O. Eichwald, M. Yousfi, P. Bayle, and M. Jugroot. Modeling and three-dimensional

simulation of the neutral dynamics in an air discharge confined in a microcavity. i.

formation and free expansion of the pressure waves. Journal of applied physics,

84(9):4704–4715, 1998.

[38] Myron N. Plooster. Numerical simulation of spark discharges in air. Physics of Fluids(1958-1988), 14(10):2111–2123, 1971.

[39] M. Akram and E. Lundgren. The evolution of spark discharges in gases: I. macro-

scopic models. Journal of Physics D: Applied Physics, 29(8):2129, 1996.

[40] Harold L. Brode. Numerical solutions of spherical blast waves. Journal of Appliedphysics, 26(6):766–775, 2004.

[41] Vahid Vahedi and Maheswaran Surendra. A monte carlo collision model for the

particle-in-cell method: applications to argon and oxygen discharges. ComputerPhysics Communications, 87(1):179–198, 1995.

[42] S. Longo, Kh Hassouni, D. Iasillo, and M. Capitelli. Coupled electron and molecular

vibrational kinetics in a 1d particle-in-cell model of a low pressure, high frequency

electric discharge in nitrogen. Journal de Physique III, 7(3):707–718, 1997.

[43] David L. Bruhwiler, Rodolfo E. Giacone, John R. Cary, John P. Verboncoeur, Peter

Mardahl, Eric Esarey, W.P. Leemans, and B.A. Shadwick. Particle-in-cell simula-

tions of plasma accelerators and electron-neutral collisions. Physical Review SpecialTopics-Accelerators and Beams, 4(10):101302, 2001.

[44] David Trunec, Zdenek Bonaventura, and David Necas. Solution of time-dependent

boltzmann equation for electrons in non-thermal plasma. Journal of Physics D: Ap-plied Physics, 39(12):2544, 2006.

BIBLIOGRAPHY 123

[45] V. Guerra and J.M.A.H. Loureiro. Electron and heavy particle kinetics in a low-

pressure nitrogen glow discharge. Plasma Sources Science and Technology, 6(3):361,

1997.

[46] R. Bini, B. Galletti, A. Iordanidis, M. Schwinne, and T.W. Schlapfer. Cfd in circuit

breaker research & development. In Electric Power Equipment-Switching Technology(ICEPE-ST), 2011 1st International Conference on, pages 375–378. IEEE, 2011.

[47] K.Y. Park and M.T.C. Pang. Mathematical modeling of sf6 puffer circuit breakers. i.

high current region. Plasma Science, IEEE Transactions on, 24(2):490–502, 1996.

[48] K. Mardikyan. Breakdown strength of air, sf6 and a mixture of air plus sf6 containing

a small amount of sf6. European transactions on electrical power, 9(5):313–316,

1999.

[49] Jian-quan Zhou, Yue-fan Du, Mu-tian Chen, Cheng-rong Li, Xiao-xin Li, and Yu-

zhen Lv. Ac and lightning breakdown strength of transformer oil modified by

semiconducting nanoparticles. In Electrical Insulation and Dielectric Phenomena(CEIDP), 2011 Annual Report Conference on, pages 652–654. IEEE, 2011.

[50] Maik Koch, Markus Fischer, and S. Tenbohlen. The breakdown voltage of insulation

oil under the influences of humidity, acidity, particles and pressure. In InternationalConference on Advances in Processing, Testing and Application of Dielectric Mater-ials APTADM, volume 26, 2007.

[51] E. Husain, M.M. Mohsin, A. Masood, M.U. Zuberi, and M. Shahzad Alam. Dielec-

tric behavior of insulating materials under liquid nitrogen. Dielectrics and ElectricalInsulation, IEEE Transactions on, 9(6):932–938, 2002.

[52] S. Fink, M. Noe, V. Zwecker, and T. Leibfried. Lightning impulse breakdown voltage

of liquid nitrogen under the influence of heating. In Journal of Physics: ConferenceSeries, volume 234, page 032011. IOP Publishing, 2010.

[53] Alan H. Cookson. Review of high-voltage gas breakdown and insulators in com-

pressed gas. Physical Science, Measurement and Instrumentation, Management andEducation-Reviews, IEE Proceedings A, 128(4):303–312, 1981.

[54] J. Gerhold. Breakdown phenomena in liquid helium. Electrical Insulation, IEEETransactions on, 24(2):155–166, Apr 1989.

[55] K. Elanseralathan, M. Joy Thomas, and G.R. Nagabhushana. Breakdown of solid

insulating materials under high frequency high voltage stress. In Properties and Ap-plications of Dielectric Materials, 2000. Proceedings of the 6th International Con-ference on, volume 2, pages 999–1001. IEEE, 2000.

124 BIBLIOGRAPHY

[56] Meng Song, Kun Nan Cao, Da Da Wang, Xin Yang, and Bin Wei. Ac dielectric

strength of polymer materials under tensile stress at 77k and normal temperature.

In Applied Superconductivity and Electromagnetic Devices (ASEMD), 2013 IEEEInternational Conference on, pages 476–477, Oct 2013.

[57] Y.P. Raizer, V.I. Kisin, and J.E. Allen. Gas Discharge Physics. Springer Berlin

Heidelberg, 2011.

[58] E. Maia, I. Serra, and M. Peres. Dc circuit breakers and their use in hvdc

grids. http://www.academia.edu/4809738The_Gas_Discharges_in_History_and_

Teaching_of_Physics_and_Chemistry, 2010.

[59] N.H. Malik and A.H. Qureshi. A review of electrical breakdown in mixtures of sf6

and other gases. Electrical Insulation, IEEE Transactions on, (1):1–13, 1979.

[60] John M. Meek and John Drummond Craggs. Electrical breakdown of gases. 1978.

[61] Leonard Benedict Loeb. Basic processes of gaseous electronics. Univ of California

Press, 1955.

[62] P.C. Stoller, M. Seeger, A.A. Iordanidis, and Naidis G. V. Co2 as an arc interruption

medium in gas circuit breakers. IEEE Trans. Plasma Sci., 41(8):2359–2368, 2013.

[63] High voltage co2 circuit breaker type lta - enhancing eco-efficiency.

|http://new.abb.com/high-voltage/AIS/selector/lta.

[64] Steven Boggs. Sulfur hexafluoride: Introduction to the material and dielectric. IEEEElectrical Insulation Magazine, 5(5):18–21, 1989.

[65] Nazar Hussain Malik, AA. Al-Arainy, and Mohammad Iqbal Qureshi. Electricalinsulation in power systems. Marcel Dekker, 1998.

[66] A. Moukengue Imano. Monitoring of the dielectric strength of the air/sf6-mixtures

for application in gas insulated transmission lines. The European Physical JournalApplied Physics, 28(02):197–203, 2004.

[67] N.H. Malik, A.H. Qureshi, and Y.A. Safar. Dc voltage breakdown of sf6-air and

sf6-co2 mixtures in rod-plane gaps. Electrical Insulation, IEEE Transactions on,

EI-18(6):629–636, Dec 1983.

[68] Y. Qiu, X. Ren, and X. Weng. The dielectric strength of sf6 and neon gas mixtures.

Journal of Physics D: Applied Physics, 21(4):657, 1988.

[69] Y. Qiu and Y.P. Feng. Calculation of dielectric strength of the sf6/n2 gas mixture

in macroscopically and microscopically non-uniform fields. Proceedings of the 4thInternational Conference on Properties and Applications of Dielectric Materials,

1(1):87–90, 1988.

BIBLIOGRAPHY 125

[70] M. Shimozuma and H. Tagashira. Measurement of the ionisation and attachment

coefficients in sf6 and helium mixtures. Journal of Physics D: Applied Physics,

16(7):1283, 1983.

[71] J.L. Moruzzi and J.D. Craggs. Ionization and attachment and breakdown measure-

ments in mixtures of sf6 with helium, argon and hydrogen. In Phenomena in IonizedGases, Twelfth International Conference, volume 1, page 225, 1975.

[72] M. Koch and C.M. Franck. Prediction of partial discharge and breakdown voltages

in cf4 for arbitrary electrode geometries. Journal of Physics D: Applied Physics,

48(5):055207, 2015.

[73] C. McGarvey, I.V. Timoshkin, S.J. MacGregor, M.P. Wilson, M.J. Given, and M.A.

Sinclair. Characterisation of a plasma closing switch filled with environmentally

friendly gases. In Pulsed Power Conference (PPC), 2013 19th IEEE, pages 1–5,

June 2013.

[74] A. Lee and L.S. Frost. Interruption capability of gases and gas mixtures in a puffer-

type interrupter. Plasma Science, IEEE Transactions on, 8(4):362–367, 1980.

[75] H.O. Noeske. Arc thermal recovery speed in different gases and gas mixtures. PowerApparatus and Systems, IEEE Transactions on, (11):4612–4620, 1981.

[76] K. Mochizuki, Takafumi Ueno, Hitoshi Mizoguchi, Satoru Yanabu, S. Yuasa, and

S. Okabe. Evaluation of interruption capability on various gases. In Gaseous Dielec-trics X, pages 265–270. Springer, 2004.

[77] T. Uchii, Y. Hoshina, T. Mori, H. Kawano, T. Nakamoto, and H. Mizoguchi. Investig-

ations on sf6-free gas circuit breaker adopting co2 gas as an alternative arc-quenching

and insulating medium. In Gaseous Dielectrics X, pages 205–210. Springer, 2004.

[78] S.F. Philp. Compressed gas insulation in the million-volt range: A comparison or sf6

with n2 and co2. Power Apparatus and Systems, IEEE Transactions on, 82(66):356–

359, 1963.

[79] C. Blank and M. H. Edwards. Dielectric breakdown of liquid helium. Phys. Rev.,119:50–52, Jul 1960.

[80] J. Gerhold, M. Hubmann, and E. Telser. Gap size effect on liquid helium breakdown.

Cryogenics, 34(7):579–586, 1994.

[81] Shu Xiao, Juergen Kolb, Susumu Kono, Sunao Katsuki, Ravindra P. Joshi,

M. Laroussi, and Karl H. Schoenbach. High power water switches: postbreak-

down phenomena and dielectric recovery. Dielectrics and Electrical Insulation, IEEETransactions on, 11(4):604–612, 2004.

126 BIBLIOGRAPHY

[82] Abderrahmane Beroual, M. Zahn, A. Badent, K. Kist, A.J. Schwabe, H. Yamashita,

K. Yamazawa, M. Danikas, W.G. Chadband, and Y. Torshin. Propagation and struc-

ture of streamers in liquid dielectrics. Electrical Insulation Magazine, IEEE, 14(2):6–

17, 1998.

[83] M. Hara, T. Kaneko, and K. Honda. Electrical breakdown mechanism of liquid nitro-

gen in the presence of thermally induced bubbles. Cryogenics, 27(2):93–101, 1987.

[84] Isidor Sauers, Randy James, Alvin Ellis, Enis Tuncer, Georgios Polizos, and Mar-

shall Pace. Breakdown in liquid nitrogen in the presence of thermally generated

bubbles for different electrode geometries. In Electrical Insulation and DielectricPhenomena, 2009. CEIDP’09. IEEE Conference on, pages 319–322. IEEE, 2009.

[85] Kai-Yuan Shih and Bruce R. Locke. Effects of electrode protrusion length, pre-

existing bubbles, solution conductivity and temperature, on liquid phase pulsed elec-

trical discharge. Plasma Processes and Polymers, 6(11):729–740, 2009.

[86] G Jackson, L. Hatfield, M. Kristiansen, M. Hagler, J. Marx, A.L. Donaldson,

G. Leiker, R. Curry, R. Ness, L. Gordon, et al. Surface studies of dielectric ma-

terials used in spark gaps. Journal of applied physics, 55(1):262–268, 1984.

[87] D. Wetz, J. Mankowski, and M. Kristiansen. The impact of electrode area and surface

roughness on the pulsed breakdown strength water. In Pulsed Power Conference,2005 IEEE, pages 1163–1166. IEEE, 2005.

[88] Vladimir M. Atrazhev, Vladimir S. Vorobev, Igor V. Timoshkin, Martin J. Given,

and Scott J. MacGregor. Mechanisms of impulse breakdown in liquid: The role of

joule heating and formation of gas cavities. Plasma Science, IEEE Transactions on,

38(10):2644–2651, 2010.

[89] P.K. Watson. Electrostatic and hydrodynamic effects in the electrical breakdown of

liquid dielectrics. Electrical Insulation, IEEE Transactions on, (2):395–399, 1985.

[90] I.V. Lisitsyn, H. Nomlyama, S. Katsuki, and H. Akiyama. Thermal processes in a

streamer discharge in water. Dielectrics and Electrical Insulation, IEEE Transactionson, 6(3):351–356, 1999.

[91] Shu Xiao, Juergen Kolb, Susumu Kono, Sunao Katsuki, Ravindra P Joshi,

M. Laroussi, and Karl H. Schoenbach. High power water switches: postbreak-

down phenomena and dielectric recovery. Dielectrics and Electrical Insulation, IEEETransactions on, 11(4):604–612, 2004.

[92] K.C. Kao and J.H. Calderwood. Effects of hydrostatic pressure, temperature and im-

purity on electric conduction in liquid dielectrics. Electrical Engineers, Proceedingsof the Institution of, 112(3):597–601, March 1965.

BIBLIOGRAPHY 127

[93] Z. Krasucki. Breakdown of liquid dielectrics. Proceedings of the Royal Society ofLondon. Series A. Mathematical and Physical Sciences, 294(1438):393–404, 1966.

[94] R.S. Dhariwal, J.-M. Torres, and M.P.Y. Desmulliez. Electric field breakdown at

micrometre separations in air and nitrogen at atmospheric pressure. Science, Meas-urement and Technology, IEE Proceedings -, 147(5), Sep 2000.

[95] CL Wadhwa. High voltage engineering. New Age International, 2007.

[96] G.A. Vorob’ev, S.G. Ekhanin, and N.S. Nesmelov. Electrical breakdown in solid

dielectrics. Physics of the Solid State, 47(6), 2005.

[97] R.J. Densley and B. Salvage. Partial discharges in gaseous cavities in solid dielec-

trics under impulse voltage conditions. Electrical Insulation, IEEE Transactions on,

(2):54–62, 1971.

[98] Paul P. Budenstein. On the mechanism of dielectric breakdown of solids. ElectricalInsulation, IEEE Transactions on, (3):225–240, 1980.

[99] H.C. Karner and M. Ieda. Technical aspects of interfacial phenomena in solid insu-

lating systems. In Properties and Applications of Dielectric Materials, 1991., Pro-ceedings of the 3rd International Conference on, pages 592–597. IEEE, 1991.

[100] D.W. Auckland and B.R. Varlow. Electrical treeing in solid polymeric insulation.

Engineering Science & Education Journal, 4(1):11–16, 1995.

[101] S. Xiao, J. Kolb, S. Kono, S. Katsuki, R.P. Joshi, M. Laroussi, and K.H. Schoenbach.

High power, high recovery rate water switch. In Pulsed Power Conference, 2003.Digest of Technical Papers. PPC-2003. 14th IEEE International, volume 1, pages

649–652. IEEE, 2003.

[102] Stuart L. Moran and Larry F. Rinehart. Voltage recovery time of small spark gaps.

Plasma Science, IEEE Transactions on, 10(4):277–280, Dec 1982.

[103] M. Seeger, G. Naidis, A. Steffens, H. Nordborg, and M. Claessens. Investigation of

the dielectric recovery in synthetic air in a high voltage circuit breaker. Journal ofPhysics D: Applied Physics, 38(11):1795, 2005.

[104] Xinjing Cai, Xiaobin Zou, Xinxin Wang, Liming Wang, Zhicheng Guan, and Weihua

Jiang. Over-volted breakdown and recovery of short nitrogen spark gaps. Laser andParticle Beams, 28(03):443–450, 2010.

[105] Shu Xiao, J.F. Kolb, M.A. Malik, XinPei Lu, M. Laroussi, R.P. Joshi, E. Schamiloglu,

and K.H. Schoenbach. Electrical breakdown and dielectric recovery of propylene

carbonate. Plasma Science, IEEE Transactions on, 34(5):1653–1661, Oct 2006.

[106] Stuart L. Moran and Leonard W. Hardesty. High-repetition-rate hydrogen spark gap.

Electron Devices, IEEE Transactions on, 38(4):726–730, 1991.

128 BIBLIOGRAPHY

[107] Karl Schoenbach, Juergen Kolb, Shu Xiao, Sunao Katsuki, Yasushi Minamitani, and

Ravindra Joshi. Electrical breakdown of water in microgaps. Plasma Sources Scienceand Technology, 17(2):024010, 2008.

[108] D. Dujic, G. Steinke, E. Bianda, S. Lewdeni-Schmid, C. Zhao, and J.K. Steinke.

Characterization of a 6.5kv igbt for medium-voltage high-power resonant dc-dc con-

verter. pages 1438–1444, March 2013.

[109] A. Kadavelugu, S. Bhattacharya, Sei-Hyung Ryu, E. Van Brunt, D. Grider, A. Agar-

wal, and S. Leslie. Characterization of 15 kv sic n-igbt and its application consider-

ations for high power converters. pages 2528–2535, Sept 2013.

[110] Honggang Sheng, Zheng Chen, Fred Wang, and Alan Millner. Investigation of 1.2 kv

sic mosfet for high frequency high power applications. In Applied Power ElectronicsConference and Exposition (APEC), 2010 Twenty-Fifth Annual IEEE, pages 1572–

1577. IEEE, 2010.

[111] K. Fujii, P. Koellensperger, and R.W. De Doncker. Characterization and comparison

of high blocking voltage igbts and iegts under hard- and soft-switching conditions. In

Power Electronics Specialists Conference, 2006. PESC ’06. 37th IEEE, pages 1–7,

June 2006.

[112] Xu She, R. Burgos, Gangyao Wang, Fei Wang, and A.Q. Huang. Review of solid

state transformer in the distribution system: From components to field application.

In Energy Conversion Congress and Exposition (ECCE), 2012 IEEE, pages 4077–

4084, Sept 2012.

[113] A. Abramovitz and K.M. Smedley. Survey of solid-state fault current limiters. PowerElectronics, IEEE Transactions on, 27(6):2770–2782, June 2012.

[114] Roland Span, Eric W. Lemmon, Richard T. Jacobsen, Wolfgang Wagner, and Akimi-

chi Yokozeki. A reference equation of state for the thermodynamic properties of

nitrogen for temperatures from 63.151 to 1000 k and pressures to 2200 mpa. Journalof Physical and Chemical Reference Data, 29(6):1361–1433, 2000.

[115] Ram B. Gupta and Jae-Jin Shim. Solubility in Supercritical Carbon Dioxide. CRC

Press, 2006.

[116] Laurie L. Williams, James B. Rubin, and H.W. Edwards. Calculation of hansen

solubility parameter values for a range of pressure and temperature conditions, in-

cluding the supercritical fluid region. Industrial & engineering chemistry research,

43(16):4967–4972, 2004.

[117] Nist chemistry webbook. nist standard reference database. http://webbook.nist.gov/

chemistry/form-ser.html.

BIBLIOGRAPHY 129

[118] E.W. Lemmon and R.T. Jacobsen. Viscosity and thermal conductivity equations for

nitrogen, oxygen, argon, and air. International Journal of Thermophysics, 25(1):21–

69, 2004.

[119] Preeti Gopaliya, Priyadarshani R Kamble, Ravindra Kamble, and Chetan Singh

Chauhan. A review article on supercritical fluid chromatography. InternationalJournal of Pharma Research & Review, 3(5):59–61, 2004.

[120] Phillip E. Savage, Sudhama Gopalan, Thamid I. Mizan, Christopher J. Martino, and

Eric E. Brock. Reactions at supercritical conditions: applications and fundamentals.

AIChE Journal, 41(7):1723–1778, 1995.

[121] C.H. Zhang, T. Kiyan, T. Namihira, A. Uemura, T. Fang, B.C. Roy, M. Sasaki, S. Kat-

suki, H. Akiyama, and M. Goto. Negative dc corona discharges in supercritical car-

bon dioxide.

[122] Theodore W Randolph. Supercritical fluid extractions in biotechnology. Trends inbiotechnology, 8:78–82, 1990.

[123] Hideo Namatsu, Kenji Yamazaki, and Kenji Kurihara. Supercritical drying for

nanostructure fabrication without pattern collapse. Microelectronic Engineering,

46(1):129–132, 1999.

[124] S.G. Kazarian. Polymer processing with supercritical fluids. Polymer science seriesCC/C of vysokomolekuliarnye soedineniia, 42(1):78–101, 2000.

[125] Vinod Jain. Supercritical fluids tackle hazardous wastes. Environmental science &technology, 27(5):806–808, 1993.

[126] Martin G. Hitzler and Martyn Poliakoff. Continuous hydrogenation of organic com-

pounds in supercritical fluids. Chemical Communications, (17):1667–1668, 1997.

[127] K. Byrappa, S. Ohara, and T. Adschiri. Nanoparticles synthesis using supercritical

fluid technology towards biomedical applications. Advanced Drug Delivery Reviews,

60(3):299–327, 2008.

[128] Tsuyohito Ito and Kazuo Terashima. Generation of micrometer-scale discharge in a

supercritical fluid environment. Applied physics letters, 80(16):2854–2856, 2002.

[129] Evgeniya H. Lock, Alexei V. Saveliev, and Lawrence A. Kennedy. Initiation of pulsed

corona discharge under supercritical conditions. IEEE transactions on plasma sci-ence, 33(2):850–853, 2005.

[130] Tao Wang, Bao min Sun, and Hai ping Xiao. Kinetic analysis of dielectric layer

thickness on nitric oxide removal by dielectric barrier discharge. Japanese Journalof Applied Physics, 52(4R):046201.

130 BIBLIOGRAPHY

[131] T. Kiyan, K. Tanaka, A. Uemura, M. Takade, B.C. Roy, T. Namihira, M. Sasaki,

H. Akiyama, M. Goto, and M. Hara. Pulsed and dc discharges in supercritical carbon

dioxide. In Pulsed Power Conference, 2007 16th IEEE International, volume 2,

pages 1528–1531. IEEE, 2007.

[132] Denat Andre. Conduction and breakdown initiation in dielectric liquids. In DielectricLiquids (ICDL), 2011 IEEE International Conference on, pages 1–11. IEEE, 2011.

[133] T. Ihara, T. Furusato, S. Kameda, T. Kiyan, S. Katsuki, M. Hara, and H. Akiyama.

Initiation mechanism of a positive streamer in pressurized carbon dioxide up to liquid

and supercritical phases with nanosecond pulsed voltages. Journal of Physics D:Applied Physics, 45(7):075204, 2012.

[134] T. Furusato, T. Ihara, S. Kameda, T. Kiyan, S. Katsuki, M. Hara, and H. Akiyama.

Fractal analysis of positive pulsed streamer patterns in supercritical carbon dioxide.

Plasma Science, IEEE Transactions on, 40(10):2425–2430, Oct 2012.

[135] Tomohiro Furusato, Takeshi Ihara, Tsuyoshi Kiyan, Sunao Katsuki, Masanori Hara,

and Hidenori Akiyama. Initiation mechanism of a negative nanosecond pulsed dis-

charge in supercritical carbon dioxide. Plasma Science, IEEE Transactions on,

40(11):3105–3115, 2012.

[136] J.P. Hickey and M. Ihme. Supercritical mixing and combustion in rocket propulsion.

Annual Research Briefs, pages 21–36, 2013.

[137] Tsuyoshi Kiyan, Mitsuru Sasaki, Takeshi Ihara, Takao Namihira, Masanori Hara,

Motonobu Goto, and Hidenori Akiyama. Pulsed breakdown and plasma-aided phenol

polymerization in supercritical carbon dioxide and sub-critical water. Plasma Pro-cesses and Polymers, 6(11):778–785, 2009.

[138] Satoshi Hamaguchi and Suresh C. Sharma. Plasma discharge in supercritical fluids.

32nd EPS Conference on Plasma Phys., vol. 29C:P–5.116, 2005.

[139] Hitoshi Muneoka, Keiichiro Urabe, Sven Stauss, and Kazuo Terashima. Breakdown

characteristics of electrical discharges in high-density helium near the critical point.

Applied Physics Express, 6(8):086201, 2013.

[140] I Ishii and T. Noguchi. Dielectric breakdown of supercritical helium. ElectricalEngineers, Proceedings of the Institution of, 126(6):532–536, June 1979.

[141] D.A. Lacoste, H. Muneoka, D.Z. Pai, S. Stauss, and K. Terashima. Breakdown

characteristics of a nanosecond-pulsed plasma discharge in supercritical air. PlasmaSources Science and Technology, 21(5):052003, 2012.

[142] Masayoshi Sawada, Takaaki Tomai, Tsuyohito Ito, Hideyuki Fujiwara, and Kazuo

Terashima. Micrometer-scale discharge in high-pressure h2o and xe environments

including supercritical fluid. Journal of Applied Physics, 100(12), 2006.

BIBLIOGRAPHY 131

[143] Tsuyoshi Kiyan, Akihiro Uemura, Bhupesh C Roy, Takao Namihira, Masanori Hara,

Mitsuru Sasaki, Motonobu Goto, and Hidenori Akiyama. Negative dc prebreakdown

phenomena and breakdown-voltage characteristics of pressurized carbon dioxide up

to supercritical conditions. Plasma Science, IEEE Transactions on, 35(3):656–662,

2007.

[144] Takaaki Tomai, Tsuyohito Ito, and Kazuo Terashima. Generation of dielectric barrier

discharge in high-pressure n2 and co2 environments up to supercritical conditions.

Thin Solid Films, 506:409–413, 2006.

[145] Donald Reeder Young. Electric breakdown in co2 from low pressures to the liquid

state. Journal of Applied Physics, 21(3):222–231, 1950.

[146] Christoph Meyer, Stefan Schroder, and Rik W. De Doncker. Solid-state circuit break-

ers and current limiters for medium-voltage systems having distributed power sys-

tems. Power Electronics, IEEE Transactions on, 19(5):1333–1340, 2004.

[147] C.M. Franck. Hvdc circuit breakers: A review identifying future research needs.

Power Delivery, IEEE Transactions on, 26(2):998–1007, April 2011.

[148] Weihua Jiang, Kiyoshi Yatsui, Ken Takayama, Mitsuo Akemoto, Eiji Nakamura,

Naohiro Shimizu, Akira Tokuchi, Sergei Rukin, Victor Tarasenko, and Alexei

Panchenko. Compact solid-state switched pulsed power and its applications. Pro-ceedings of the IEEE, 92(7):1180–1196, 2004.

[149] J. Pasley. Pulse power switching devices - an overview. http://nuclearweaponarchive.

org/Library/Pasley1.html.

[150] A. Larsson. Gas-discharge closing switches and their time jitter. Plasma Science,IEEE Transactions on, 40(10):2431–2442, Oct 2012.

[151] Ceramic hydrogen thyratron data sheet [online]. http://www.rell.com/filebase/en/src/

Datasheets/HY8789_ExcelitasThyratron.pdf,.

[152] K. Frank, E. Boggasch, J. Christiansen, A. Goertler, W. Hartmann, C. Kozlik,

G. Kirkman, C. Braun, V. Dominic, MA. Gundersen, et al. High-power pseudos-

park and blt switches. Plasma Science, IEEE Transactions on, 16(2):317–323, 1988.

[153] A. Larsson, D. Yap, and Yong Wah Lim. Time jitter study of a corona-stabilized clos-

ing switch. Plasma Science, IEEE Transactions on, 40(10):2646–2652, Oct 2012.

[154] Martin A. Gundersen. Gas-phase pulsed power switches. Plasma Science, IEEETransactions on, 19(6):1123–1131, 1991.

[155] L. Arantchouk, A. Houard, Y. Brelet, J. Carbonnel, J. Larour, Y.-B. AndrÃl’, and

A. Mysyrowicz. A simple high-voltage high current spark gap with subnanosecond

jitter triggered by femtosecond laser filamentation. Applied Physics Letters, 102,

2013.

132 BIBLIOGRAPHY

[156] Diana L. Loree, M.G. Giesselmann, M. Kristiansen, A.P. Shulski, and R. Kihara. Re-

cent advances in high-power ignitron development. Electron Devices, IEEE Trans-actions on, 38(4):720–725, 1991.

[157] A. Larsson, D. Yap, and J. Au. Operating conditions and switching delay time of a

corona-stabilized switch during repetitive operation. Plasma Science, IEEE Trans-actions on, 41(10):2605–2608, Oct 2013.

[158] Igor V. Grekhov and Gennady A. Mesyats. Physical basis for high-power semi-

conductor nanosecond opening switches. Plasma Science, IEEE Transactions on,

28(5):1540–1544, 2000.

[159] M. Giesselmann, M. Kristiansen, B. Grinstead, and M. Wilson. Evaluation of a solid

state opening switch (sos) diode pulser for use in a electrochemical reactor. 1:588–

591, 2000.

[160] V.M. Efanov, AF. Kardo-Sysoev, M. A Larionov, I G. Tchashnikov, P.M. Yarin, and

AV. Kriklenko. Powerful semiconductor 80 kv nanosecond pulser. 2:985–987 vol.2,

June 1997.

[161] Marek Adamowicz, Sebastian Giziewski, Jedrzej Pietryka, and Zbigniew Krzemin-

ski. Performance comparison of sic schottky diodes and silicon ultra fast recov-

ery diodes. In Compatibility and Power Electronics (CPE), 2011 7th InternationalConference-Workshop, pages 144–149. IEEE, 2011.

[162] 1000v n-channel mosfet datasheet [online]. http://www.irf.com/product-info/

datasheets/data/irfmg50.pdf,.

[163] 250v n-channel enhanced mode mosfet datasheet [online]. http://www.diodes.com/

datasheets/ZVN4525Z.pdf,.

[164] L. Cheng, A. Agarwal, M. O’Loughlin, C. Capell, A Burk, J. Palmour, A Ogunniyi,

H. O’Brien, and C. Scozzie. Advanced silicon carbide gate turn-off thyristor for

energy conversion and power grid applications. pages 2249–2252, Sept 2012.

[165] Shozo Ishii, Jun-ichi Nishizawa, Naohiro Shimizu, and YUICHIRO IMANISHI.

Static induction thyristors as a fast high-power switch for pulsed power applications.

In Fifth Asia-Pacific Academy of Materials Topical Seminar, 2001.

[166] A. Meyer, A. Mojab, and S.K. Mazumder. Evaluation of first 10-kv optical eto thyris-

tor operating without any low-voltage control bias. pages 1–5, July 2013.

[167] Q. Zhang, A Agarwal, C. Capell, L. Cheng, M. O’Loughlin, A Burk, J. Palmour,

V. Temple, A Ogunniyi, H. O’Brien, and C.J. Scozzie. Sic super gto thyristor tech-

nology development: Present status and future perspective. pages 1530–1535, June

2011.

BIBLIOGRAPHY 133

[168] J. Urban and Klaus Frank. Cold cathode thyratron development for pulsed power ap-

plications. In Power Modulator Symposium, 2002 and 2002 High-Voltage Workshop.Conference Record of the Twenty-Fifth International, pages 217–220, June 2002.

[169] Weihao Tie, Shanhong Liu, Xuandong Liu, Qiaogen Zhang, Lei Pang, and Longchen

Liu. A novel low-jitter plasma-jet triggered gas switch operated at a low working

coefficient. Review of Scientific Instruments, 85(2), 2014.

[170] I.V. Grekhov and G.A. Mesyats. Nanosecond semiconductor diodes for pulsed power

switching. Physics-Uspekhi, 48(7):703–712, 2005.

[171] N.I. Boyko, L.S. Evdoshenko, and V.M. Ivanov. A compact high-voltage pulse gener-

ator with opening insulated-gate bipolar transistor switch and a high pulse repetition

rate. Instruments and Experimental Techniques, 57(4):443–452, 2014.

[172] Fan Xu, Ben Guo, Leon M Tolbert, Fred Wang, and Ben J Blalock. Evaluation

of sic mosfets for a high efficiency three-phase buck rectifier. In Applied PowerElectronics Conference and Exposition (APEC), 2012 Twenty-Seventh Annual IEEE,

pages 1762–1769. IEEE, 2012.

[173] Pinnekamp Fritz. The circuit breaker-a showcase of industrial product

development. http://library.abb.com/global/scot/scot271.nsf/veritydisplay/

737de0b7f522f9b2c125728b00474780/$File/75-78%201M720_ENG72dpi.pdf,

2008.

[174] Sf6 gas circuit breakers: a review of live tank and dead tank technology. http://www.

eprmagazine.com/article.php?ItemId=445&CategoryId=6, 2013.

[175] K.C. Agrawal. Electrical power engineering reference & applications handbook-

circuit interrupters and their applications. http://www.electricalengineering-book.

com/pdf/chapter-036917.pdf, 2007.

[176] B. Bachmann, G. Mauthe, E. Ruoss, H.P. Lips, J. Porter, and J. Vithayathil. Develop-

ment of a 500kv airblast hvdc circuit breaker. Power Apparatus and Systems, IEEETransactions on, (9):2460–2466, 1985.

[177] G. McAnany and W.T. Lugton. Development of a new range of ehv heavy-duty

airblast circuit breakers. In Proceedings of the Institution of Electrical Engineers,

volume 122, pages 539–544. IET, 1975.

[178] Y. Matsui, K. Nagatake, M. Takeshita, K. Katsumata, A. Sano, H. Ichikawa,

H. Saitohu, and M. Sakaki. Development and technology of high voltage vcbs; breaf

history and state of art. In Discharges and Electrical Insulation in Vacuum, 2006.ISDEIV’06. International Symposium on, volume 1, pages 253–256. IEEE, 2006.

134 BIBLIOGRAPHY

[179] Yonggang Guan, Weidong Liu, Guozheng Xu, Xin Zheng, Ning Du, Junhui Wu,

Junhua Yin, Hua Zhang, and Yiming Zhang. Fundamental tests for 550 kv sf6 syn-

chronous circuit breaker. In Mechatronics and Automation, 2009. ICMA 2009. Inter-national Conference on, pages 2602–2606, Aug 2009.

[180] R.P.P. Smeets, S. Kuivenhoven, and A.B. Hofstee. Testing of 800 and 1200 kv class

circuit breakers. In Electric Power Equipment - Switching Technology (ICEPE-ST),2011 1st International Conference on, pages 17–21, Oct 2011.

[181] H. Saitoh, H. Ichikawa, A. Nishijima, Y. Matsui, M. Sakaki, M. Honma, and H. Ok-

ubo. Research and development on 145 kv/40 ka one break vacuum circuit breaker.

In Transmission and Distribution Conference and Exhibition 2002: Asia Pacific.IEEE/PES, volume 2, pages 1465–1468. IEEE, 2002.

[182] Roberto Rudervall, J.P. Charpentier, and Raghuveer Sharma. High voltage direct

current (hvdc) transmission systems technology review paper. Energy week, 2000,

2000.

[183] Kunio Nakanishi. Switching phenomena in high-voltage circuit breakers. 1991.

[184] S. Tokuyama, K. Arimatsu, Y. Yoshioka, Y. Kato, and K. Hirata. Development and

interrupting tests on 250kv 8ka hvdc circuit breaker. Power Engineering Review,IEEE, (9):42–43, 1985.

[185] B. Pauli, G. Mauthe, E. Ruoss, G. Ecklin, J. Porter, and J. Vithayathil. Develop-

ment of a high current hvdc circuit breaker with fast fault clearing capability. PowerDelivery, IEEE Transactions on, 3(4):2072–2080, 1988.

[186] Keping Yan, EJM Van Heesch, AJM Pemen, PAHJ Huijbrechts, and Piet C.T. van der

Laan. A 10 kW high-voltage pulse generator for corona plasma generation. Reviewof Scientific Instruments, 72(5):2443–2447, 2001.

[187] Yingjie Li, Rakshit Tirumala, Paul Rumbach, and David B. Go. The coupling of

ion-enhanced field emission and the discharge during microscale breakdown at mod-

erately high pressures. Plasma Science, IEEE Transactions on, 41(1):24–35, 2013.

[188] J. Zhang, B. van Heesch, F. Beckers, T. Huiskamp, and G. Pemen. Breakdown

voltage and recovery rate estimation of a supercritical nitrogen plasma switch.

Plasma Science, IEEE Transactions on, 42(2):376–383, Feb 2014.

[189] T.M.P. Briels, E.M. Van Veldhuizen, and Ute Ebert. Positive streamers in air and

nitrogen of varying density: experiments on similarity laws. Journal of Physics D:Applied Physics, 41(23):234008, 2008.

[190] S. Pancheshnyi, M. Nudnova, and A. Starikovskii. Development of a cathode-

directed streamer discharge in air at different pressures: experiment and comparison

with direct numerical simulation. Physical Review E, 71(1):016407, 2005.

BIBLIOGRAPHY 135

[191] M. Akram. Two-dimensional model for spark discharge simulation in air. AIAAjournal, 34(9):1835–1842, 1996.

[192] O. Ekici, O.A. Ezekoye, M.J. Hall, and R.D. Matthews. Thermal and flow fields

modeling of fast spark discharges in air. Journal of Fluids Engineering, 129(1):55–

65, 2007.

[193] K. Tsuruta and H. Ebara. A model of gas temperature decay after arc extinction

of small air gaps. In Properties and Applications of Dielectric Materials, 1991.,Proceedings of the 3rd International Conference on, pages 377–380. IEEE, 1991.

[194] Mangal Sen Gautam. Recovery process in spark channel. The University of British

Columbia (Canada), 1966.

[195] Geoffrey Taylor. The formation of a blast wave by a very intense explosion. i. theoret-

ical discussion. Proceedings of the Royal Society of London. Series A. Mathematicaland Physical Sciences, 201(1065):159–174, 1950.

[196] Myron N. Plooster. Shock waves from line sources. numerical solutions and experi-

mental measurements. Physics of Fluids (1958-1988), 13(11):2665–2675, 2003.

[197] U. Yusupaliev. Relation between the limiting brightness temperature of expanding

pulsed high-current discharges in dense gases and ionization potentials of their atoms.

Bulletin of the Lebedev Physics Institute, 34(9):264–269, 2007.

[198] S. Refael and E. Sher. A theoretical study of the ignition of a reactive medium by

means of an electrical discharge. Combustion and flame, 59(1):17–30, 1985.

[199] D.L. Jones, G.G. Goyer, and M.N. Plooster. Shock wave from a lightning discharge.

Journal of Geophysical Research, 73(10):3121–3127, 1968.

[200] Yildiz Bayazitoglu and M Necati Ozick. Elements of heat transfer. McGraw-Hill,

1988.

[201] Hidenori Akiyama, Tetsuro Tanigawa, Sadao Maeda, Koichi Takaki, and M. Kristi-

ansen. Voltage-current characteristics of high-current pulsed discharges in sf. Elec-trical Engineering in Japan, 111(3):29–36, 1991.

[202] Frederick W. Grover. Inductance calculations: working formulas and tables. Courier

Dover Publications, 2004.

[203] M.J. Kushner, W.D. Kimura, D.H. Ford, and S.R. Byron. Dual channel formation in

a laser-triggered spark gap. Journal of applied physics, 58(11):4015–4023, 1985.

[204] G.V. Naidis. Positive and negative streamers in air: velocity-diameter relation. Phys-ical review. E, Statistical, nonlinear, and soft matter physics, 79(5 Pt 2):057401–

057401, 2009.

136 BIBLIOGRAPHY

[205] N. Yu Babaeva and George V. Naidis. Dynamics of positive and negative stream-

ers in air in weak uniform electric fields. Plasma Science, IEEE Transactions on,

25(2):375–379, 1997.

[206] Carolynne Montijn, Willem Hundsdorfer, and Ute Ebert. An adaptive grid refinement

strategy for the simulation of negative streamers. Journal of Computational Physics,

219(2):801–835, 2006.

[207] N.A. Popov. Formation and development of a leader channel in air. Plasma PhysicsReports, 29(8):695–708, 2003.

[208] N.A. Popov. Study of the formation and propagation of a leader channel in air.

Plasma physics reports, 35(9):785–793, 2009.

[209] Eric W. Lemmon, Richard T. Jacobsen, Steven G. Penoncello, and Daniel G. Friend.

Thermodynamic properties of air and mixtures of nitrogen, argon, and oxygen from

60 to 2000 k at pressures to 2000 mpa. Journal of physical and chemical referencedata, 29(3):331–385, 2000.

[210] C. Montijn and U. Erbet. Diffusion correction to the raetherâASmeek criterion for the

avalanche-to-streamer transition. J. Phys. D: Appl. Phys., pages 2979–2992, 2006.

[211] E.E. Kunhardt and W.W. Byszewski. Development of overvoltage breakdown at high

gas pressure. Physical Review A, 21(6):2069, 1980.

[212] Alejandro Luque and Ute Ebert. Density models for streamer discharges: beyond

cylindrical symmetry and homogeneous media. Journal of Computational Physics,

231(3):904–918, 2012.

[213] S. Nijdam, F.M.J.H. Van De Wetering, R. Blanc, E.M. Van Veldhuizen, and U. Ebert.

Probing photo-ionization: experiments on positive streamers in pure gases and mix-

tures. Journal of Physics D: Applied Physics, 43(14):145204, 2010.

[214] Alejandro Luque, Valeria Ratushnaya, and Ute Ebert. Positive and negative streamers

in ambient air: modelling evolution and velocities. Journal of Physics D: AppliedPhysics, 41(23):234005, 2008.

[215] Chao Li, Ute Ebert, and W.J.M. Brok. Avalanche to streamer transition in particle

simulations. arXiv preprint arXiv:0712.1942, 2007.

[216] G.V. Naidis. Modelling of streamer propagation in atmospheric-pressure helium

plasma jets. Journal of Physics D: Applied Physics, 43(40):402001, 2010.

[217] Victor P. Pasko. The oretical modeling of sprites and jets. In Sprites, elves andintense lightning discharges, pages 253–311. Springer, 2006.

BIBLIOGRAPHY 137

[218] Ute Ebert, Sander Nijdam, Chao Li, Alejandro Luque, Tanja Briels, and Eddie van

Veldhuizen. Review of recent results on streamer discharges and discussion of their

relevance for sprites and lightning. Journal of Geophysical Research: Space Physics(1978–2012), 115(A7), 2010.

[219] Yu D. Korolev, N.M. Bykov, and S.N. Ivanov. Subnanosecond processes in the

stage of breakdown formation in gas at a high pressure. Plasma physics reports,

34(12):1022–1027, 2008.

[220] S. Dujko, A.H. Markosyan, R.D. White, and U. Ebert. High-order fluid model for

streamer discharges: I. derivation of model and transport data. Journal of Physics D:Applied Physics, 46(47):475202, 2013.

[221] I.A. Kossyi, A. Yu Kostinsky, A.A. Matveyev, and V.P. Silakov. Kinetic scheme of

the non-equilibrium discharge in nitrogen-oxygen mixtures. Plasma Sources Scienceand Technology, 1(3):207, 1992.

[222] Aram H. Markosyan, Alejandro Luque, FJ Gordillo-Vázquez, and Ute Ebert. Pump-

kin: A tool to find principal pathways in plasma chemical models. Computer PhysicsCommunications, 2014.

[223] N Yu Babaeva and GV Naidis. On streamer dynamics in dense media. Journal ofElectrostatics, 53(2):123–133, 2001.

[224] S. Achat, Y. Teisseyre, and E. Marode. The scaling of the streamer-to-arc transition

in a positive point-to-plane gap with pressure. Journal of Physics D: Applied Physics,

25(4):661, 1992.

[225] G.J.M. Hagelaar and L.C. Pitchford. Solving the boltzmann equation to obtain elec-

tron transport coefficients and rate coefficients for fluid models. Plasma SourcesScience and Technology, 14(4):722, 2005.

[226] A.V. Phelps and L.C. Pitchford. Anisotropic scattering of electrons by n 2 and its

effect on electron transport. Physical Review A, 31(5):2932, 1985.

[227] A. Flitti and S. Pancheshnyi. Gas heating in fast pulsed discharges in n2-o2 mixtures.

The European Physical Journal Applied Physics, 45(02):21001, 2009.

[228] N.A. Popov. Investigation of the mechanism for rapid heating of nitrogen and air in

gas discharges. Plasma physics reports, 27(10):886–896, 2001.

[229] N.A. Popov. Fast gas heating in a nitrogen–oxygen discharge plasma: I. kinetic

mechanism. Journal of Physics D: Applied Physics, 44(28):285201, 2011.

[230] N.A. Popov. Dissociation of nitrogen in a pulse-periodic dielectric barrier discharge

at atmospheric pressure. Plasma Physics Reports, 39(5):420–424, 2013.

138 BIBLIOGRAPHY

[231] G.V. Naidis. Simulation of convection-stabilized low-current glow and arc discharges

in atmospheric-pressure air. Plasma Sources Science and Technology, 16(2):297,

2007.

[232] Daniel I. Sebacher. A correlation of n sub 2 vibrational goes to translational relaxa-

tion times. AIAA Journal, 5(4):819–820, 1967.

[233] D. I. Sebacher and R. W. Guy. Vibrational relaxation in expanding n2 and air. Tech-nical report, NASA, 1974.

[234] M. Chatelet and J. Chesnoy. New results on the vibrational relaxation time in com-

pressed nitrogen at 293 k. Chemical physics letters, 122(6):550–552, 1985.

[235] M. Seeger, L. Niemeyer, T. Christen, M. Schwinne, and R. Dommerque. An integral

arc model for ablation controlled arcs based on cfd simulations. Journal of PhysicsD: Applied Physics, 39(10):2180, 2006.

[236] Karl Stephan, R. Krauss, and A. Laesecke. Viscosity and thermal conductivity of

nitrogen for a wide range of fluid states. Journal of physical and chemical referencedata, 16(4):993–1023, 1987.

[237] Geoffrey Taylor. The formation of a blast wave by a very intense explosion. ii. the

atomic explosion of 1945. Proceedings of the Royal Society of London. Series A.Mathematical and Physical Sciences, 201(1065):175–186, 1950.

[238] Shao-Chi Lin. Cylindrical shock waves produced by instantaneous energy release.

Journal of Applied Physics, 25(1):54–57, 2004.

[239] M. Akram. The evolution of spark discharges in gases: Ii. numerical solution of

one-dimensional models. Journal of Physics D: Applied Physics, 29(8):2137, 1996.

[240] John VonNeumann and Robert D. Richtmyer. A method for the numerical calculation

of hydrodynamic shocks. Journal of applied physics, 21(3):232–237, 1950.

[241] William H. Press. Numerical recipes 3rd edition: The art of scientific computing.

Cambridge university press, 2007.

[242] Gideon Wormeester, Sergey Pancheshnyi, Alejandro Luque, Sander Nijdam, and Ute

Ebert. Probing photo-ionization: simulations of positive streamers in varying n2:o2-

mixtures. Journal of Physics D: Applied Physics, 43(50):505201, 2010.

[243] W. Boeck and W. Pfeiffer. Conduction and breakdown in gases. Wiley encyclopediaof electrical and electronics engineering, 1999.

[244] Z. Liu, E.M. van Veldhuizen, E.J.M. van Heesch, and A.J.M. Pemen. Strong density

gradients in postdischarges in argon and air. Plasma Science, IEEE Transactions on,

39(11):2092–2093, 2011.

BIBLIOGRAPHY 139

[245] A. Borghese, A. D’Alessio, M. Diana, and C. Venitozzi. Development of hot nitrogen

kernel, produced by a very fast spark discharge. In Symposium (International) onCombustion, volume 22, pages 1651–1659. Elsevier, 1989.

[246] M.N. Shneider. Turbulent decay of after-spark channels. Physics of Plasmas (1994-present), 13(7):073501, 2006.

[247] Randall K. Smith and John P. Hughes. Ionization equilibrium timescales in colli-

sional plasmas. The Astrophysical Journal, 718(1):583, 2010.

[248] M. Lino Da Silva, V. Guerra, and J. Loureiro. A review of non-equilibrium dissoci-

ation rates and models for atmospheric entry studies. Plasma Sources Science andTechnology, 18(3):034023, 2009.

[249] Leonard Benedict Loeb. Basic processes of gaseous electronics. Univ of California

Press, 1955.

[250] J.M.K. MacAlpine and A.H. Cookson. Impulse breakdown of compressed gases

between dielectric-covered electrodes. Electrical Engineers, Proceedings of the In-stitution of, 117(3):646–652, 1970.

[251] Ekram Husain and R.S. Nema. Analysis of paschen curves for air, n2 and sf6 us-

ing the townsend breakdown equation. Electrical Insulation, IEEE Transactions on,

(4):350–353, 1982.

[252] Lutz Niemeyer. A generalized approach to partial discharge modeling. Dielectricsand Electrical Insulation, IEEE Transactions on, 2(4):510–528, 1995.

[253] N.H. Malik. Streamer breakdown criterion for compressed gases. Electrical Insula-tion, IEEE Transactions on, (5):463–467, 1981.

[254] Robert C. Weast, Melvin J. Astle, and William H. Beyer. CRC handbook of chemistryand physics, volume 69. CRC press Boca Raton, FL, 1988.

[255] E. Howard Cohen. The electric strength of highly compressed gases. Proceedings ofthe IEE-Part A: Power Engineering, 103(7):57–68, 1956.

[256] S. Pancheshnyi, B. Eismann, G. Hagelaar, and L. Pitchford. Computer code

ZDPlasKin. http://www.zdplaskin.laplace.univ-tlse.fr.

[257] S. Nijdam, E. Takahashi, A.H. Markosyan, and U. Ebert. Investigation of positive

streamers by double-pulse experiments, effects of repetition rate and gas mixture.

Plasma Sources Science and Technology, 23(2):025008, 2014.

[258] Carl A. Rouse. Ionization equilibrium equation of state. The Astrophysical Journal,134:435, 1961.

LIST OF PUBLICATIONS

Journal Publications

2015

• J. Zhang, A.H. Markosyan, M. Seeger, E.M. van Veldhuizen, E.J.M. van Heesch,

U. Ebert. Numerical and experimental investigation of dielectric recovery in

supercritical N2, Plasma Sources Sci. Technol., vol.24, no.2, pp. 025008, 2015.

• J. Zhang, E.J.M. van Heesch, F.J.C.M. Beckers, T. Namihira, A.J.M. Pemen, A.H.

Markosyan, R.P.P. Smeets. Breakdown Strength and Dielectric Recovery Investigation

in High Pressure Nitrogen Switch up to Supercritical Status (accepted for publication),

IEEE Transactions on Dielectrics and Electrical Insulation.

2014

• J. Zhang, E.J.M. van Heesch, F.J.C.M. Beckers, T. Huiskamp, A.J.M. Pemen.

Breakdown Voltage and Recovery Rate Estimation of a Supercritical Nitrogen Plasma

Switch, IEEE transactions on Plasma Science, vol.42, no.2, pp.376-383, 2014 .

Conference publications

2014

• J. Zhang, E.J.M. van Heesch, Takao Namihira, F.J.C.M. Beckers, and A.J.M. Pemen.

Breakdown strength and dielectric recovery investigation inside a supercritical switch.

Proceedings of 14th International Symposium on High Pressure Low Temperature

Plasma Chemistry (HAKONE XIV), Germany, 2014.

141

142 LIST OF PUBLICATIONS

• E.J.M. van Heesch, J. Zhang, T. Namihira, A. Markosyan, A.J.M. Pemen, F.J.C.M.

Beckers, T. Huiskamp, and U. Ebert. Voltage recovery in supercritical switchingmedia. Proceedings of IEEE International Power Modulator and High Voltage Conference,

Santa Fe, June 1-5, 2014.

• E.J.M. van Heesch, W.F.L.M. Hoeben, J. Zhang, F.J.C.M. Beckers, T. Huiskamp and

A.J.M. Pemen. Pulsed Power Applications Research: From Super Critical Switchesto Renewable Fuels. Proceedings of IEEE International Power Modulator and High

Voltage Conference, Santa Fe, June 1-5, 2014.

2013

• J. Zhang, E.J.M. van Heesch. Recovery rate analysis of plasma switch and comparisonwith experimental results. Proceedings of XXth Symposium on Physics of Switching

Arc-FSO 2013, Czech Republic, Sep. 2013.

• A.H. Markosyan, J. Zhang, B. van Heesch, U. Ebert. Streamer to spark transition insupercritical N2 . Proceedings of XXth Symposium on Physics of Switching Arc-

FSO 2013, Czech Republic, Sep. 2013.

• J. Zhang, T. Furusato, F.J.C.M. Beckers, E.J.M. van Heesch, E.M. van Veldhuizen.

Study of breakdown inside a supercritical fluid plasma switch. Proceedings of IEEE

Pulsed Power & Plasma Science Conference, San Francisco, CA USA, June. 2013.

2012

• J. Zhang, F.J.C.M. Beckers, E.J.M. van Heesch. Breakdown voltage study of asupercritical medium switch based on experiment. Proceedings of EAPPC-BEAMS-

Conference, Karlsruhe, Germany, 2012.

ACKNOWLEDGEMENT

After the long hard time, I am so glad and proud about what I have managed to do. But I

know that I couldn’t have gone so far without the great help from my colleagues, my friends,

my family and everyone else who has given me help within the past five years.

First of all, I want to give my sincere appreciation to my first promoter prof.ir. Wil

Kling. When my husband Lei got a chance of interview for a Ph.D. candidate position in

EES-group in TU/e, Wil kindly invited me for a visit to the group. The encouragement and

care from Wil in our regular discussion during my Ph.D. study always gave me impetus to

work hard and cruise to the happy ending of the thesis.

Dr. Bert van Heesch is my daily supervisor and co-promoter. My highest thanks go

to Bert for his patient guidance. You gave me huge help throughout my five-year study,

from the collection of the initial materials for this project to the design and operation of the

supercritical switches. Thanks to the kind help from Bert, my contract of Ph.D. study was

successfully extended for extra six months.

I would like to give my acknowledgement to my second Promoter prof. Ute Ebert. She

gave me huge support in the theoretical modeling of my thesis. I am enlightened by her

intelligence and diligence.

My great thanks also go to Dr. Martin Seeger from ABB, Switzerland. You ceaseless

advertising is an indispensable part of my thesis. My appreciation to your patient guidance

and friendly attitude.

I would also like to appreciate prof.dr.ir. René Smeets. Thanks so much for your

kind patient guidance during the past years. During all the discussion and meetings, you

always gave me essential suggestions, and your kindness always made me feel relaxed and

confident.

I want to thank colleagues Tomohiro and Dr. Takao Namihira from Kumamoto University,

Japan. Thank you a lot for the useful discussion and sharing of information during your visit

to our group.

With this chance, I want to express my thankfulness to all the other committee members,

143

144 ACKNOWLEDGEMENT

Prof.Dr.-Ing. A. Schnettle, dr.ing. A.J.M. Pemen, and dr. R.A.H. Engeln for their precious

time to review my thesis. Their useful comments help me improve this thesis so much.

My gratitude also goes to my cooperator Aram from CWI, Amsterdam. I enjoyed all

those hard working weekends when we built the theoretical models and prepared the papers.

Other colleagues from CWI, Anbang, Ashutosh, and Jannis also gave me kind support

during those days. My appreciations to all of you.

I would like to thank all the other colleagues from EES-group. I feel so lucky to

work with you during my Ph.D. student life. Thank you so much for creating the joyful

environment and your support whenever I need. I especially want to thank Anna, Annemarie,

Ballard, Bart, Chai, Eloy, Frank, Gu, Hennie, Jerom, Marcel, Pavlo, Tom, Vindhya, Wilfred,

Yan, Yin, Yu. My sincere appreciation goes to Ad, Rene, and Sjoerd, who have given me so

much technical support and warm care.

Last but not the least, I want to thank my parents and my husband. Thank you for being

around and supporting me.

CURRICULUM VITAE

Jin Zhang was born in Jiangsu, China, on 12. Dec. 1985. She obtained her Bachelor

of Science of thermal power and dynamic engineering from Nanjing Normal University

in Nanjing, China, in 2007. She graduated from RWTH-Aachen University in Aachen,

Germany, as a Master of Science of electrical power engineering in 2010. In the same year,

she joint the Electrical Energy System group at Eindhoven University of Technology, as a

Ph.D. candidate under the supervision of prof.ir. W.L. Kling and dr.ir. E.J.M. van Heesch.

Her research topic is "Supercritical fluid for high power switching".

145


Recommended